M. Lazar

A. Hallén, L. Ottaviani, M. Lazar, 2015, 2015 4th International Conference on Advancements in Nuclear Instrumentation Measurement Methods and their Applications (ANIMMA).

Realization and Characterization of Carbonic Layers on 4H-SiC for Electrochemical Detections

D. Planson, M. Lazar, C. Raynaud, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

OBIC analysis for 1.3 kV 6H–SiC p+n planar bipolar diodes protected by Junction Termination Extension

D. Planson, J. Chante, M. Lazar, 2004 .

The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study

D. Planson, J. Chante, R. Nipoti, 2004 .

OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension

D. Planson, J. Chante, M. Lazar, 2003 .

State of the art of high temperature power electronics

Bruno Allard, Dominique Planson, Hervé Morel, 2009 .

High energy N + ion implantation in 4H-SiC

D. Planson, M. Lazar, C. Raynaud, 2007 .

Experimental analysis of drilling fiber reinforced composites

Paul Xirouchakis, P. Xirouchakis, M. Lazar, 2011 .

Cutting Force Modelling for Drilling of Fiber-Reinforced Composites

M. Lazar, Mihai-Bogdan Lazar, 2012 .

Electrical behaviour of fresh and stored porous silicon films

M. Ciurea, V. Iancu, M. Lazar, 1998 .

Mechanical load distribution along the main cutting edges in drilling

Paul Xirouchakis, Mihai-Bogdan Lazar, P. Xirouchakis, 2013 .

A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti3SiC2 Phase

G. Ferro, D. Planson, M. Lazar, 2016, IEEE Transactions on Electron Devices.

Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes

A. Henry, E. Janzén, E. Bano, 2012 .

Fast Neutron Detection With 4H-SiC Based Diode Detector up to 500 °C Ambient Temperature

A. Lyoussi, A. Klix, V. Vervisch, 2016, IEEE Transactions on Nuclear Science.

Study of the Lateral Growth by VLS Mechanism Using Al-Based Melts on Patterned SiС Substrate

G. Ferro, D. Tournier, M. Lazar, 2012 .

3C-SiC Heteroepitaxial Growth by Vapor-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate Using Si-Ge Melt

G. Ferro, D. Tournier, M. Lazar, 2011 .

Improvements in Realizing 4H-SiC Thermal Neutron Detectors

A. Hallén, L. Ottaviani, M. Lazar, 2016 .

4H-SiC Neutron Sensors Based on Ion Implanted 10B Neutron Converter Layer

Olivier Palais, Laurent Ottaviani, Axel Klix, 2015, IEEE Transactions on Nuclear Science.

Radiation Silicon Carbide Detectors Based on Ion Implantation of Boron

A. Hallén, L. Ottaviani, M. Lazar, 2014, IEEE Transactions on Nuclear Science.

Cathodoluminescence Characterization of Point Defects Generated through Ion Implantations in 4H-SiC

M. Lazar, N. Bercu, Enora Vuillermet, 2023, Coatings.

Nuclear Radiation Detectors Based on 4H-SiC p+-n Junction

A. Hallén, L. Ottaviani, M. Lazar, 2014 .

Very low specific contact resistance measurements made on a highly p-type doped 4H-SiC layer selectively grown by vapor-liquid-solid transport

G. Ferro, A. Henry, D. Planson, 2013 .

High Quality Single Crystal Recrystallization of Thin 4H-SiC Films Deposed by PVD Techniques, a way for New Emerging Fields

M. Lazar, A. Andrieux, Elise Usureau, 2023 .

Enhanced Resonant Raman Scattering of GaN Functional Layers Using Al Thin Films - A Versatile Tool for Multilayer Structure Analysis

D. Planson, C. Sonneville, M. Lazar, 2022, Materials Science Forum.

3C-SiC Seeded Growth on Diamond Substrate by VLS Transport

G. Ferro, D. Araújo, M. Lazar, 2014 .

p-Doped SiC Growth on Diamond Substrate by VLS Transport

G. Ferro, D. Planson, D. Tournier, 2013 .

Buried Selective Growth of p-Doped SiC by VLS Epitaxy

G. Ferro, D. Tournier, P. Brosselard, 2012 .

High-temperature behavior of SiC power diodes

Cyril Buttay, Dominique Bergogne, Christophe Raynaud, 2011, Proceedings of the 2011 14th European Conference on Power Electronics and Applications.

Elimination of Twin Boundaries when Growing 3C-SiC Heteroepitaxial by Vapour-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate

G. Ferro, D. Tournier, M. Lazar, 2012 .

Investigation of 3C-SiC Lateral Growth on 4H-SiC Mesas

G. Ferro, D. Tournier, M. Lazar, 2011 .

Annealing studies of Al-implanted 6H-SiC in an induction furnace

J. Chante, M. Locatelli, L. Ottaviani, 2002 .

Investigation of Al-implanted 6H– and 4H–SiC layers after fast heating rate annealings

M. Locatelli, L. Ottaviani, Y. Monteil, 2001 .

4H-silicon carbide thin junction based ultraviolet photodetectors

Dominique Planson, Frédéric Milesi, Olivier Palais, 2012 .

Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour

D. Planson, L. Ottaviani, Stéphane Biondo, 2012 .

4H-SiC P+N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes

D. Planson, L. Ottaviani, M. A. El Khakani, 2012 .

OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients

D. Planson, D. Tournier, S. Scharnholz, 2012 .

SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements

D. Planson, D. Tournier, S. Scharnholz, 2012 .

Further optimization of VLS localized epitaxy for deeper 4H‐SiC p–n junctions

G. Ferro, D. Planson, M. Lazar, 2017 .

Electrical Characterization of PiN Diodes with p+ Layer Selectively Grown by VLS Transport

G. Ferro, A. Henry, E. Janzén, 2013 .

High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing

P. Godignon, D. Planson, J. Chante, 2001 .

Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers

D. Planson, J. Chante, M. Locatelli, 2003 .

Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices

G. Ferro, H. Morel, D. Planson, 2015, 2015 International Semiconductor Conference (CAS).

Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC

J. Leclercq, D. Planson, M. Lazar, 2007 .

VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures

G. Ferro, H. Morel, D. Planson, 2015 .

Applications of Vapor-Liquid-Solid Selective Epitaxy of Highly p-Type Doped 4H-SiC: PiN Diodes with Peripheral Protection and Improvement of Specific Contact Resistance of Ohmic Contacts

G. Ferro, A. Henry, D. Planson, 2014 .

P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth

G. Ferro, D. Planson, J. Chante, 2005 .

A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects

D. Planson, J. Chante, M. Locatelli, 2002 .

Characteristics of aluminum-implanted 6H-SiC samples after different thermal treatments

D. Planson, J. Chante, M. Locatelli, 2002 .

Light Extraction from 4H Silicon Carbide by Nanostructuring the Surface with High Temperature Annealing

M. Lazar, Elise Usureau, R. Déturche, 2023, Materials Science Forum.

Process Optimization for High Temperature SiC Lateral Devices

D. Planson, D. Tournier, M. Lazar, 2009 .

Comparison of Electrical Properties of Ohmic Contact Realized on p-Type 4H-SiC

D. Planson, M. Lazar, H. Vang, 2008 .

Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage

T. Lebey, D. Planson, M. Locatelli, 2009 .

Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects

D. Planson, D. Tournier, K. Isoird, 2014, 2014 International Semiconductor Conference (CAS).

Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration

F. Richardeau, H. Morel, D. Planson, 2023, International Conference on Mixed Design of Integrated Circuits and Systems.

Surface engineering for SiC etching with Ni electroplating masks

M. Lazar, N. Beydoun, Xavier Gassmann, 2022, 2022 International Semiconductor Conference (CAS).

Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State

D. Planson, P. Brosselard, M. Lazar, 2011 .

Experimental determination of impact ionization coefficients in 4H-SiC

D. Planson, D. Tournier, P. Brosselard, 2011 .

The channeling effect of Al and N ion implantation in 4H–SiC during JFET integrated device processing

J. Leclercq, D. Planson, M. Lazar, 2015 .

4H-SiC bipolar power diodes realized by ion implantation

D. Planson, J. Chante, M. Locatelli, 2001, 2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547).

Optical beam induced current measurements: principles and applications to SiC device characterization

D. Planson, D. Tournier, P. Brosselard, 2009 .

Modeling, Fabrication, and Characterization of Planar Inductors on YIG Substrates

B. Allard, C. Joubert, C. Buttay, 2011 .