C. Raynaud

O. Flament, P. Paillet, P. Masson, 1997, RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294).

Extraction of the 4H-SiC/SiO2 Barrier Height Over Temperature

H. Morel, C. Buttay, O. Aviñó-Salvadó, 2020, IEEE Transactions on Electron Devices.

Realization and Characterization of Carbonic Layers on 4H-SiC for Electrochemical Detections

D. Planson, M. Lazar, C. Raynaud, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

OBIC analysis for 1.3 kV 6H–SiC p+n planar bipolar diodes protected by Junction Termination Extension

D. Planson, J. Chante, M. Lazar, 2004 .

The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study

D. Planson, J. Chante, R. Nipoti, 2004 .

OBIC Measurements of 1.3kV 6H-SiC Bipolar Diodes Protected by Junction Termination Extension

D. Planson, J. Chante, M. Lazar, 2003 .

Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection

D. Planson, D. Tournier, S. Scharnholz, 2011 .

Thermal Stability of Silicon Carbide Power JFETs

F. Morel, H. Morel, D. Bergogne, 2013, IEEE Transactions on Electron Devices.

State of the art of high temperature power electronics

Bruno Allard, Dominique Planson, Hervé Morel, 2009 .

High energy N + ion implantation in 4H-SiC

D. Planson, M. Lazar, C. Raynaud, 2007 .

Optical Investigation of On‐Surface Synthesized Armchair Graphene Nanoribbons

C. Voisin, K. Müllen, S. Campidelli, 2017 .

Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in vertical GaN-on-GaN Schottky barrier diodes

H. Morel, Y. Cordier, D. Planson, 2022, Micro and Nanostructures.

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

H. Morel, Y. Cordier, D. Planson, 2022, Microelectron. J..

Optical properties of an ensemble of G-centers in silicon

C. Voisin, S. Pezzagna, J. Meijer, 2017, 1708.05238.

A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti3SiC2 Phase

G. Ferro, D. Planson, M. Lazar, 2016, IEEE Transactions on Electron Devices.

Comparison of trapping–detrapping properties of mobile charge in alkali contaminated metal‐oxide‐silicon carbide structures

J. Autran, C. Jaussaud, C. Raynaud, 1995 .

A 4H-SiC high power density VJFET as controlled current limiter

P. Godignon, C. Raynaud, D. Tournier, 2002, Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344).

Measurement and analysis of SiC-MOSFET threshold voltage shift

Hervé Morel, Quentin Molin, Mehdi Kanoun, 2018, Microelectron. Reliab..

Calculation of theoretical capacitance–voltage characteristics of 6H–SiC metal–oxide–semiconductor structures

C. Raynaud, 2000 .

Theoretical investigation of incomplete ionization of dopants in 6H–SiC metal-oxide-semiconductor capacitors

J. Autran, C. Raynaud, 1999 .

Electrical characterisation of epitaxial 6H-SiC by admittance spectroscopy

G. Guillot, R. Davis, F. Ducroquet, 1996 .

Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices

Dominique Planson, Hervé Morel, Dominique Tournier, 2010 .

Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts

D. Planson, C. Raynaud, Teng Zhang, 2019, The European Physical Journal Applied Physics.

Characterisation of deep level trap centres in 6H-SiC p-n junction diodes

G. Guillot, J. Chante, C. Raynaud, 1999 .

Thermal Stability of Silicon Carbide Power Diodes

C. Buttay, H. Morel, F. Morel, 2012, IEEE Transactions on Electron Devices.

Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

P. Godignon, N. Mestres, D. Planson, 2000 .

Electrically active traps in 4H-silicon carbide (4H-SiC) PiN power diodes

H. Morel, D. Planson, C. Raynaud, 2023, Journal of Materials Science: Materials in Electronics.

Deep Level Transient Fourier Spectroscopy Investigation of Electron Traps on AlGaN/GaN-on-Si Power Diodes

M. Charles, C. Gillot, R. Gwoziecki, 2023, Energies.

Silicon carbide controlled current limiter, current limitation strategies, foreseen applications and benefits

X. Jorda, J. Millan, D. Tournier, 2004, The 4th International Power Electronics and Motion Control Conference, 2004. IPEMC 2004..

Thermal Runaway Robustness of SiC VJFETs

F. Morel, H. Morel, D. Bergogne, 2013 .

High-temperature behavior of SiC power diodes

Cyril Buttay, Dominique Bergogne, Christophe Raynaud, 2011, Proceedings of the 2011 14th European Conference on Power Electronics and Applications.

OBIC technique applied to wide bandgap semiconductors from 100 K up to 450 K

D. Planson, P. Bevilacqua, C. Raynaud, 2017 .

Determination of 4H-SiC Ionization Rates Using OBIC Based on Two-Photon Absorption

D. Planson, P. Bevilacqua, S. Scharnholz, 2016 .

Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current

D. Planson, P. Bevilacqua, S. Scharnholz, 2015 .

Two-dimensional Optical Beam Induced Current measurements in 4H-SiC bipolar diodes

D. Planson, C. Raynaud, P. Bevilacqua, 2014, 2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME).

OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients

D. Planson, D. Tournier, S. Scharnholz, 2012 .

SIMS Analyses Applied to Open an Optical Window in 4H-SiC Devices for Electro-Optical Measurements

D. Planson, D. Tournier, S. Scharnholz, 2012 .

Further optimization of VLS localized epitaxy for deeper 4H‐SiC p–n junctions

G. Ferro, D. Planson, M. Lazar, 2017 .

High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing

P. Godignon, D. Planson, J. Chante, 2001 .

Determination of ionization energies of the nitrogen donors in 6H‐SiC by admittance spectroscopy

G. Guillot, R. Davis, F. Ducroquet, 1994 .

Electrical characterization of silicon carbide n+pp+ diodes with an N-implanted n+ emitter

G. Guillot, J. Chante, M. Locatelli, 1998 .

Temperature dependence of electrical properties of 6H-SiC buried gate JFET

G. Guillot, C. Raynaud, C. Richier, 1997 .

Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers

D. Planson, J. Chante, M. Locatelli, 2003 .

Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices

G. Ferro, H. Morel, D. Planson, 2015, 2015 International Semiconductor Conference (CAS).

VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures

G. Ferro, H. Morel, D. Planson, 2015 .

P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth

G. Ferro, D. Planson, J. Chante, 2005 .

A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects

D. Planson, J. Chante, M. Locatelli, 2002 .

Process Optimization for High Temperature SiC Lateral Devices

D. Planson, D. Tournier, M. Lazar, 2009 .

Comparison of Electrical Properties of Ohmic Contact Realized on p-Type 4H-SiC

D. Planson, M. Lazar, H. Vang, 2008 .

Deep centers and negative temperature coefficient of the breakdown voltage of SiC p-n structures

D. Planson, J. Chante, M. Locatelli, 1997 .

Polyimide Passivation Effect on High Voltage 4H-SiC PiN Diode Breakdown Voltage

T. Lebey, D. Planson, M. Locatelli, 2009 .

Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects

D. Planson, D. Tournier, K. Isoird, 2014, 2014 International Semiconductor Conference (CAS).

Experimental determination of impact ionization coefficients in 4H-SiC

D. Planson, D. Tournier, P. Brosselard, 2011 .

4H-SiC bipolar power diodes realized by ion implantation

D. Planson, J. Chante, M. Locatelli, 2001, 2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547).

Optical beam induced current measurements: principles and applications to SiC device characterization

D. Planson, D. Tournier, P. Brosselard, 2009 .

Robustness study of 1700 V 45 mΩ SiC MOSFETs

Quentin Molin, Mehdi Kanoun, Christophe Raynaud, 2018, 2018 IEEE International Conference on Industrial Technology (ICIT).

Study of mobile ionic charges by thermally stimulated currents in 4H-SiC MOS capacitors with thick SiO2 layers

M. Locatelli, C. Raynaud, R. Arvinte, 2021 .

Effect of boron diffusion on the high‐voltage behavior of 6H‐SiC p+nn+ structures

J. Chante, M. Locatelli, A. Lebedev, 1996 .

Dopant level freeze-out in 6H-SiC Schottky diodes and junctions

G. Guillot, C. Raynaud, 1996, Proceedings of Semiconducting and Semi-Insulating Materials Conference.

Extraction and evolution of Fowler-Nordheim tunneling parameters of thin gate oxides under EEPROM-like dynamic degradation

P. Boivin, C. Raynaud, C. Plossu, 1999 .