J. Heber

发表

A comparative study of the UV optical and structural properties of SiO2, Al2O3, and HfO2 single layers deposited by reactive evaporation, ion-assisted deposition and plasma ion-assisted deposition

Norbert Kaiser, Roland Thielsch, Joerg Heber, 2002 .

Deep UV laser induced fluorescence in fluoride thin films

W. Triebel, J. Heber, R. Thielsch, 2003 .

Comparative study of ultrafast intersubband electron scattering times at ̃1.55 μm wavelength in GaN/AlGaN heterostructures

Joerg Heber, Claire F. Gmachl, A. Y. Cho, 2002 .

Vertical transport and relaxation mechanisms in δ-doping superlattices

H. Lüth, S. Malzer, G. H. Doehler, 1998 .

Multiple subband transitions and evidence for population inversion in InAs/In(As,Sb) heterostructures

H. R. Hardaway, C. Phillips, J. Heber, 2002 .

Metallic fluoride in powder or granular form, method for its preparation and proof of the purity

J. Heber, N. Kaiser, W. Triebel, 2002 .

Time-resolved photoluminescence of type-I and type-II ( GaIn ) As ∕ Ga ( NAs ) heterostructures

S. Koch, K. Volz, K. Hantke, 2005 .

MBE growth of mid-infrared antimonide LEDs with strained electron barriers

C. Phillips, J. Heber, D. Gevaux, 2001 .

Ultrafast intersubband transitions in GaN/AlGaN heterostructures at ~1.55-μm wavelength

Claire F. Gmachl, Joerg D. Heber, Hock M. Ng, 2004, SPIE OPTO.

Recent Progress in GaN‐Based Superlattices for Near‐Infrared Intersubband Transitions

A. Cho, J. Hsu, C. Gmachl, 2002 .

Broadband Modulation of Light by Using an Electro-Optic Polymer

Joerg Heber, Christoph Georg Erben, Howard E. Katz, 2002, Science.

Laser resistivity and causes of damage in coating materials for 193 nm by photothermal methods

Norbert Kaiser, Holger Blaschke, Roland Thielsch, 1999, Laser Damage.

High-performance UV/VUV optics for the Storage Ring FEL at ELETTRA

M. Trovò, D. Ristau, A. Gatto, 2002 .

High-performance deep-ultraviolet optics for free-electron lasers.

David Garzella, Claude Amra, Norbert Kaiser, 2002, Applied optics.

Type-II InAs/InAsSb strained-layer-superlattice negative luminescence devices

Joerg Heber, H. R. Hardaway, Chris C. Phillips, 1999 .

Efficient 300 K light-emitting diodes at λ∼5 and ∼8 μm from InAs/In(As1−xSbx) single quantum wells

H. R. Hardaway, R. Stradling, C. Phillips, 1998 .

Room-temperature InAsSb strained-layer superlattice light-emitting diodes at λ=4.2 μm with AlSb barriers for improved carrier confinement

Peter Moeck, Joerg Heber, H. R. Hardaway, 1999 .

Optical studies of InAs/In(As,Sb) single quantum well (SQW) and strained-layer superlattice (SLS) LEDs for the mid-infrared (MIR) region

Peter Moeck, Joerg Heber, Harvey R. Hardaway, 1999, Photonics West.