G. Oehrlein

发表

Study of ion and vacuum ultraviolet-induced effects on styrene- and ester-based polymers exposed to argon plasma

David B. Graves, Robert L. Bruce, Sebastian Engelmann, 2009 .

The 2017 Plasma Roadmap: Low temperature plasma science and technology

E. Moreau, A. Mizuno, J. Tennyson, 2017 .

Observation of inverse reactive ion etching lag for silicon dioxide etching in inductively coupled plasmas

Marcus F. Doemling, Neal R. Rueger, G. Oehrlein, 1996 .

Highly selective etching of silicon nitride over silicon and silicon dioxide

G. Oehrlein, B. Kastenmeier, P. J. Matsuo, 1999 .

Atomic Layer Etching at the Tipping Point: An Overview

G. Oehrlein, D. Metzler, Chen Li, 2015 .

Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma.

Chen Li, G. Oehrlein, D. Metzler, 2014, Journal of vacuum science & technology. A, Vacuum, surfaces, and films : an official journal of the American Vacuum Society.

Investigation of selective SiO2‐to‐Si etching in an inductively coupled high‐density plasma using fluorocarbon gases

D. Vender, G. Oehrlein, O. Joubert, 1994 .

Reactive‐Ion Etching

G. Oehrlein, 1986 .

High density fluorocarbon etching of silicon in an inductively coupled plasma: Mechanism of etching through a thick steady state fluorocarbon layer

Marc Schaepkens, Gottlieb S. Oehrlein, N. R. Rueger, 1998 .

Sidewall surface chemistry in directional etching processes

Gottlieb S. Oehrlein, G. Oehrlein, Y. Kurogi, 1998 .

Refractive index determination of SiGe using reactive ion etching/ellipsometry: Application of the depth profiling of the GE concentration

G. Scilla, G. Oehrlein, G. Kroesen, 1992 .

Plasma Chemical Aspects of Magnetron Ion Etching with CF4/O2 and CF4/H2

S. C. Kaushik, A. Bright, G. Oehrlein, 1987 .

Plasma chemical aspects of magnetron ion etching with CF4/O2

S. C. Kaushik, A. Bright, G. Oehrlein, 1987 .

Polishing Parameter Dependencies and Surface Oxidation of Chemical Mechanical Polishing of Al Thin Films

D. A. Hansen, G. Oehrlein, T. Kuan, 1999 .

Real-time and post-plasma studies of influence of low levels of tungsten on carbon erosion and surface evolution behaviour in D2 plasma

G. Oehrlein, R. Doerner, F. Weilnboeck, 2010 .

Reactive ion etching of SiGe alloys using CF2Cl2

G. Oehrlein, J. Corbett, Ying Zhang, 1992 .

Reactive ion etching of SiGe alloys using HBr

G. Oehrlein, Ying Zhang, G. Kroesen, 1991 .

A photoemission investigation of surface processes affecting the reactive ion etching of TiSi2 in CF4

M. Jaso, G. Oehrlein, S. Robey, 1989 .

Mechanism of silicon surface roughening by reactive ion etching

M. Jaso, G. Oehrlein, R. G. Schad, 1986 .

Medium energy ion scattering analysis of reactive ion etched Si(001) surfaces

M. Copel, R. Tromp, G. Oehrlein, 1988 .

Studies of plasma surface interactions during short time plasma etching of 193 and 248 nm photoresist materials

S. Engelmann, Erica Iacob, Gottlieb S. Oehrlein, 2006 .

Characterization and mechanism of He plasma pretreatment of nanoscale polymer masks for improved pattern transfer fidelity

N. Fuller, S. Engelmann, R. Bruce, 2011 .

Real-time studies of surface roughness development and reticulation mechanism of advanced photoresist materials during plasma processing

S. Engelmann, R. Bruce, T. Lin, 2009 .

Dependence of photoresist surface modifications during plasma-based pattern transfer on choice of feedgas composition: Comparison of C4F8- and CF4-based discharges

S. Engelmann, R. Bruce, D. Graves, 2009 .

Dependence of Polymer Surface Roughening Rate on Deposited Energy Density During Plasma Processing

S. Engelmann, R. Bruce, D. Graves, 2009 .

Study of 193nm photoresist degradation during short time fluorocarbon plasma exposures. II. Plasma parameter trends for photoresist degradation

S. Engelmann, R. Bruce, G. Oehrlein, 2008 .

Study of 193nm photoresist degradation during short time fluorocarbon plasma exposure III. Effect of fluorocarbon film and initial surface condition on photoresist degradation

S. Engelmann, R. Bruce, G. Oehrlein, 2008 .

Study of 193nm photoresist degradation during short time fluorocarbon plasma exposure. I. Studies of modified layer formation

S. Engelmann, R. Bruce, G. Oehrlein, 2008 .

Study of C4F8/N2 and C4F8/Ar/N2 plasmas for highly selective organosilicate glass etching over Si3N4 and SiC

F. Celii, G. Oehrlein, D. Fuentevilla, 2003 .

Investigation of surface modifications of 193 and 248nm photoresist materials during low-pressure plasma etching

G. Oehrlein, X. Li, E. Hudson, 2004 .

Photoluminescence of defects induced in silicon by SF6/O2 reactive‐ion etching

A. Henry, I. Buyanova, B. Monemar, 1995 .

Characterization of Defects Created in Silicon Due to Etching in Low-Pressure Plasmas Containing Fluorine and Oxygen

A. Henry, I. Buyanova, B. Monemar, 1995 .

A photoluminescence study of CF4 reactive‐ion‐etched silicon: Various process conditions and magnetically enhanced etching

A. Henry, B. Monemar, G. Oehrlein, 1993 .

Photoluminescence characterization of plasma exposed silicon surfaces

A. Henry, B. Monemar, G. Oehrlein, 1991 .

Reactive‐ion‐ and plasma‐etching‐induced extended defects in silicon studied with photoluminescence

B. Svensson, G. Oehrlein, J. Lindström, 1990 .

The mechanism of the enhancement of divacancy production by oxygen during electron irradiation of silicon. II. Computer modeling

G. Oehrlein, J. Lindström, J. Corbett, 1983 .

On the photoresist stripping and damage of ultralow k dielectric materials using remote H2- and D2-based discharges

M. Bersani, G. Oehrlein, M. Anderle, 2007 .

Patterning of fluorine-, hydrogen-, and carbon-containing SiO2-like low dielectric constant materials in high-density fluorocarbon plasmas: Comparison with SiO2

T. Standaert, G. Oehrlein, P. J. Matsuo, 1999 .

Fluorocarbon high density plasmas. VII. Investigation of selective SiO2‐to‐Si3N4 high density plasma etch processes

G. Oehrlein, F. Bell, Ying Zhang, 1996 .

Interaction of long‐lived reactive species from cold atmospheric pressure plasma with polymers: Role of macromolecular structure and deep modification of aromatic polymers

P. Luan, G. Oehrlein, 2019, Plasma Processes and Polymers.

A study of CClF3/H2 reactive ion etching damage and contamination effects in silicon

S. Chakravarti, S. Fonash, G. Oehrlein, 1986 .

Electrical studies on plasma and reactive-ion-etched silicon

O. Awadelkarim, A. Henry, G. Oehrlein, 1989 .

Ion and Vacuum Ultraviolet Photon Beam Effects in 193 nm Photoresist Surface Roughening: The Role of the Adamantyl Pendant Group

R. Bruce, D. Graves, G. Oehrlein, 2011 .

Feasibility of atomic layer etching of polymer material based on sequential O2 exposure and Ar low-pressure plasma-etching

E. Vogli, G. Oehrlein, D. Metzler, 2013 .

A quantitative investigation of divacancy production enhancement by interstitial oxygen in electron-irradiated silicon

G. Oehrlein, J. Lindström, J. Corbett, 1983 .

The mechanism of the enhancement in divacancy production by oxgyen during electron irradiation of silicon. I. Experimental

G. Oehrlein, J. Corbett, A. Jaworowski, 1982 .

Properties of c-C4F8 inductively coupled plasmas. II. Plasma chemistry and reaction mechanism for modeling of Ar/c-C4F8/O2 discharges

M. Kushner, G. Oehrlein, A. Vasenkov, 2004 .

Interactive effects in the reactive ion etching of SiGe alloys

Gmw Gerrit Kroesen, Gottlieb S. Oehrlein, G. Oehrlein, 1991 .

Surface processes in CF4/O2 reactive etching of silicon

G. Oehrlein, J. Lindström, S. Robey, 1988 .

Silicon etching mechanisms in a CF4/H2 glow discharge

G. Oehrlein, H. L. Williams, Holly L. Williams, 1987 .

Fluorocarbon high density plasma. VI. Reactive ion etching lag model for contact hole silicon dioxide etching in an electron cyclotron resonance plasma

M. Surendra, G. Oehrlein, O. Joubert, 1994 .

Diffusion of boron and arsenic implants in 〈111〉 and 〈100〉 Si during rapid thermal annealing

V. Deline, R. Kalish, G. Oehrlein, 1985 .

X‐ray photoemission spectroscopy characterization of silicon surfaces after CF4/H2 magnetron ion etching: Comparisons to reactive ion etching

A. Bright, G. Oehrlein, S. Robey, 1988 .

Cold Atmospheric Pressure Plasma VUV Interactions With Surfaces: Effect of Local Gas Environment and Source Design

P. Bruggeman, P. Luan, P. Bruggeman, 2016 .

Biodeactivation of Lipopolysaccharide Correlates with Surface‐Bound NO3 After Cold Atmospheric Plasma Treatment

D. Graves, P. Luan, G. Oehrlein, 2016 .

A comparative study of biomolecule and polymer surface modifications by a surface microdischarge

D. Graves, P. Luan, G. Oehrlein, 2016 .

Polystyrene as a model system to probe the impact of ambient gas chemistry on polymer surface modifications using remote atmospheric pressure plasma under well-controlled conditions.

P. Luan, G. Oehrlein, Joonil Seog, 2015, Biointerphases.

The 2022 Plasma Roadmap: low temperature plasma science and technology

R. M. Sankaran, T. Magin, E. Ahedo, 2022, Journal of Physics D: Applied Physics.

Surface processes in low pressure plasmas

G. Oehrlein, 1997 .

Effects of ion bombardment in plasma etching on the fluorinated silicon surface layer: Real‐time and postplasma surface studies

G. Oehrlein, 1993 .

Ellipsometric study of silicon surface damage in electron cyclotron resonance plasma etching using CF4 and SF6

D. Vender, G. Oehrlein, M. Haverlag, 1992 .

Tungsten etching mechanisms in CF4/O2 reactive ion etching plasmas

G. Oehrlein, T. Bestwick, 1989 .

Characterization of Ultrathin Polymer Films Using p-Polarized ATR-FTIR and Its Comparison with XPS.

P. Luan, G. Oehrlein, 2019, Langmuir : the ACS journal of surfaces and colloids.

Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma.

Chen Li, E. Joseph, S. Engelmann, 2017, The Journal of chemical physics.

Characterization of Al, Cu, and TiN surface cleaning following a low-K dielectric etch

T. Standaert, G. Oehrlein, P. J. Matsuo, 1999 .

Stages of polymer transformation during remote plasma oxidation (RPO) at atmospheric pressure

P. Luan, G. Oehrlein, 2018 .

Effects of deuterium plasmas on silicon near‐surface properties

G. Scilla, G. Oehrlein, J. Lindström, 1989 .

Damage of ultralow k materials during photoresist mask stripping process

C. K. Inoki, E. Iacob, Wen-Li Wu, 2006 .

Sensitivity of tumor versus normal cell migration and morphology to cold atmospheric plasma‐treated media in varying culture conditions

K. Stroka, G. Oehrlein, A. Knoll, 2020, Plasma Processes and Polymers.

Surface and near-surface modifications of ultralow dielectric constant materials exposed to plasmas under sidewall-like conditions

G. Oehrlein, M. Kuo, 2010 .

Influence of C4F8/Ar-based etching and H2-based remote plasma ashing processes on ultralow k materials modifications

G. Oehrlein, M. Anderle, A. Ali, 2010 .

Interactions of photoresist stripping plasmas with nanoporous organo-silicate ultra low dielectric constant dielectrics

C. Jeynes, M. Bersani, G. Oehrlein, 2008 .

Studies of fluorocarbon film deposition and its correlation with etched trench sidewall angle by employing a gap structure using C4F8∕Ar and CF4∕H2 based capacitively coupled plasmas

G. Oehrlein, E. Hudson, X. Hua, 2008 .

Time of flight secondary ion mass spectroscopy investigation of ultralow-k dielectric modifications in hydrogen and deuterium plasmas

M. Bersani, G. Oehrlein, M. Anderle, 2006 .

Porosity-induced effects during C4F8∕90% Ar plasma etching of silica-based ultralow-k dielectrics

E. Iacob, G. Oehrlein, M. Barozzi, 2005 .

Models for the Hydrogen-Related Defect—Impurity Complexes and SiH Infrared Bands in Crystalline Silicon

G. Oehrlein, J. Corbett, A. Hiraki, 1982 .

Direct and quantitative evidence for buckling instability as a mechanism for roughening of polymer during plasma etching

R. Bruce, T. Lin, R. Phaneuf, 2012 .

In situ spatially resolved surface characterization of realistic semiconductor structure after reactive ion etching process

Kevin K. H. Chan, M. Jaso, G. Oehrlein, 1988 .

Plasma-surface interactions of nanoporous silica during plasma-based pattern transfer using C4F8 and C4F8/Ar gas mixtures

C. K. Inoki, G. Oehrlein, T. Kuan, 2004 .

Etching of xerogel in high-density fluorocarbon plasmas

P. Wayner, T. Standaert, E. Joseph, 2000 .

ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas

E. Iacob, M. Bersani, G. Oehrlein, 2006 .

Plasma Etching of Low Dielectric Constant Materials

T. Standaert, G. Oehrlein, P. J. Matsuo, 2003 .

Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing

Neal R. Rueger, T. Standaert, G. Oehrlein, 1999 .

Differences in erosion mechanism and selectivity between Ti and TiN in fluorocarbon plasmas for dielectric etch

T. Lii, C. Lenox, G. Oehrlein, 2012 .

Study of Ti etching and selectivity mechanism in fluorocarbon plasmas for dielectric etch

T. Lii, C. Lenox, G. Oehrlein, 2012 .

Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactor

N. R. Rueger, Marcus F. Doemling, Neal R. Rueger, 1997 .

Removal of Fluorocarbon Residues on CF 4 / H 2 Reactive‐Ion‐Etched Silicon Surfaces Using a Hydrogen Plasma

T. Mayer, G. Oehrlein, J. Simko, 1991 .

Investigation of Reactive‐Ion‐Etching‐Related Fluorocarbon Film Deposition onto Silicon and a New Method for Surface Residue Removal

J. Clabes, P. Spirito, G. Oehrlein, 1986 .

Formation of silicon carbide in silicon substrates during CF4/H2 dry etching

G. Oehrlein, G. Coyle, 1986 .

Investigation of thin oxide layer removal from Si substrates using an SiO2 atomic layer etching approach: the importance of the reactivity of the substrate

G. Oehrlein, D. Metzler, Chen Li, 2017 .

He plasma pretreatment of organic masking materials for performance improvement during pattern transfer by plasma etching

S. Engelmann, R. Bruce, G. Oehrlein, 2016 .

Surface analysis of realistic semiconductor microstructures

Kevin K. H. Chan, G. Rubloff, M. Jaso, 1989 .

Decontamination of raw produce by surface microdischarge and the evaluation of its damage to cellular components

Luis J. Bastarrachea, Rohan V. Tikekar, P. Luan, 2019, Plasma Processes and Polymers.

Mechanistic study of ultralow k-compatible carbon dioxide in situ photoresist ashing processes. I. Process performance and influence on ULK material modification

G. Oehrlein, M. Anderle, P. Lazzeri, 2010 .

SiO2 etching and surface evolution using combined exposure to CF4/O2 remote plasma and electron beam

D. Rhinow, G. Oehrlein, K. Edinger, 2022, Journal of Vacuum Science & Technology A.

Capacitance-voltage properties of thin Ta2O5 films on silicon

G. Oehrlein, 1988 .

Controlling Asymmetric Photoresist Feature Dimensions during Plasma‐Assisted Shrink

T. Lii, G. Oehrlein, D. Metzler, 2014 .

Studies of film deposition in fluorocarbon plasmas employing a small gap structure

G. Oehrlein, E. Hudson, Lingyi A. Zheng, 2005 .

Synergistic effects of vacuum ultraviolet radiation, ion bombardment, and heating in 193nm photoresist roughening and degradation

David B. Graves, Robert L. Bruce, Sebastian Engelmann, 2008 .

Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma

Robert L. Bruce, Sebastian Engelmann, Eric A. Joseph, 2016 .

Rethinking surface reactions in nanoscale dry processes toward atomic precision and beyond: a physics and chemistry perspective

R. Gottscho, H. Hayashi, N. Marchack, 2019, Japanese Journal of Applied Physics.

Impact of hydrofluorocarbon molecular structure parameters on plasma etching of ultra-low-K dielectric

G. Oehrlein, Chen Li, Rahul Gupta, 2016 .

Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor

N. R. Rueger, Marcus F. Doemling, Neal R. Rueger, 1999 .

Photoresist modifications by plasma vacuum ultraviolet radiation: The role of polymer structure and plasma chemistry

David B. Graves, Robert L. Bruce, Sebastian Engelmann, 2010 .

Plasma-surface interactions of model polymers for advanced photoresists using C4F8∕Ar discharges and energetic ion beams

David B. Graves, Robert L. Bruce, Sebastian Engelmann, 2007 .

Stages in the interaction of deuterium atoms with amorphous hydrogenated carbon films: Isotope exchange, soft-layer formation, and steady-state erosion

M. Schlüter, G. Oehrlein, W. Jacob, 2010 .

Nanoscale layer etching by short-time exposure of substrates to gas discharges using moving patterned shutter

G. Oehrlein, X. Hua, P. Jiang, 2006 .

Properties of C4F8 inductively coupled plasmas. I. Studies of Ar/c-C4F8 magnetically confined plasmas for etching of SiO2

M. Kushner, G. Oehrlein, A. Vasenkov, 2004 .

Characteristics of C4F8 plasmas with Ar, Ne, and He additives for SiO2 etching in an inductively coupled plasma (ICP) reactor

H. Anderson, G. Oehrlein, Yicheng Wang, 2003 .

Effects of Ar and O2 additives on SiO2 etching in C4F8-based plasmas

M. Barela, H. Anderson, G. Oehrlein, 2003 .

Fluorocarbon-based plasma etching of SiO2: Comparison of C4F6/Ar and C4F8/Ar discharges

M. Barela, H. Anderson, G. Oehrlein, 2002 .

High-density plasma patterning of low dielectric constant polymers: A comparison between polytetrafluoroethylene, parylene-N, and poly(arylene ether)

T. Standaert, R. Gutmann, J. Langan, 2001 .

A Review of SiO2 Etching Studies in Inductively Coupled Fluorocarbon Plasmas

G. Oehrlein, M. Schaepkens, 2001 .

Understanding the Roughening and Degradation of 193 nm Photoresist during Plasma Processing: Synergistic Roles of Vacuum Ultraviolet Radiation and Ion Bombardment

David B. Graves, Robert L. Bruce, Sebastian Engelmann, 2009 .

Formation of nanometer-thick delaminated amorphous carbon layer by two-step plasma processing of methacrylate-based polymer

Robert L. Bruce, Sebastian Engelmann, Sandra C. Hernández, 2015 .

Validation of etching model of polypropylene layers exposed to argon plasmas

G. Oehrlein, G. Grundmeier, A. Keudell, 2019, Plasma Processes and Polymers.

Plasma-surface interactions of advanced photoresists with C4F8∕Ar discharges: Plasma parameter dependencies

David B. Graves, Robert L. Bruce, Sebastian Engelmann, 2009 .

Mechanistic study of ultralow k-compatible carbon dioxide in situ photoresist ashing processes. II. Interaction with preceding fluorocarbon plasma ultralow k etching processes

G. Oehrlein, X. Hua, M. Kuo, 2010 .

Formation of a silicon‐carbide layer during CF4/H2 dry etching of Si

G. Oehrlein, G. Coyle, 1985 .

Spatially resolved mass spectrometric sampling of inductively coupled plasmas using a movable sampling orifice

G. Oehrlein, M. Schaepkens, Xi Li, 2003 .

Gas utilization in remote plasma cleaning and stripping applications

J. Langan, G. Oehrlein, B. Kastenmeier, 2000 .

Study of plasma - surface interactions: chemical dry etching and high-density plasma etching

Marcus F. Doemling, Neal R. Rueger, T. Standaert, 1996 .

Study of oxygen addition to CF3Br reactive ion etching plasmas: Effects on silicon surface chemistry and etching behavior

G. Oehrlein, P. Jones, J. Corbett, 1989 .

Study of silicon contamination and near‐surface damage caused by CF4/H2 reactive ion etching

Y. H. Lee, R. Tromp, G. Oehrlein, 1984 .

Electrolytical method for hydrogenation of silicon

G. Oehrlein, J. Lindström, J. Corbett, 1981 .

The structure of the boron-hydrogen complex in silicon

N. Johnson, G. Oehrlein, A. Marwick, 1987 .

High hydrogen concentrations produced by segregation into p+ layers in silicon

G. Oehrlein, M. Wittmer, A. Marwick, 1991 .

Effects of deuterium plasma treatments on the electrical properties of boron-doped silicon

O. Awadelkarim, A. Henry, G. Oehrlein, 1989 .

Photoluminescence of defects introduced by deuterium plasmas in silicon

G. Oehrlein, J. Lindström, H. Weman, 1989 .

Hydrogen-Induced Defects in Silicon by CF 4 /x% H 2 (0≤x≤ 100) RIE and H 2 Plasma

S. Jeng, G. Scilla, G. Oehrlein, 1987 .

X‐ray photoemission and Raman scattering spectroscopic study of surface modifications of silicon induced by electron cyclotron resonance etching

J. Tsang, G. Oehrlein, A. Yapsir, 1990 .

Gas-phase studies in inductively coupled fluorocarbon plasmas

Marc Schaepkens, Harold M. Anderson, Gottlieb S. Oehrlein, 2001 .

Role of C2F4, CF2, and ions in C4F8∕Ar plasma discharges under active oxide etch conditions in an inductively coupled GEC cell reactor

M. Barela, H. Anderson, G. Oehrlein, 2005 .

Thermal donors and carbonoxygen defects in silicon

G. Oehrlein, J. Lindström, H. Weman, 1987 .

Early Stages of Oxygen Clustering and Its Influence on Electrical Behavior of Silicon

G. Oehrlein, J. Corbett, 1982 .

Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si

Marc Schaepkens, Gottlieb S. Oehrlein, N. R. Rueger, 1998 .

Plasma flux-dependent lipid A deactivation

D. Graves, Cheng‐Che Hsu, Musahid Ahmed, 2014 .

Surface Chemistry Studies of Copper Chemical Mechanical Planarization

Gottlieb S. Oehrlein, G. Oehrlein, J. Hernandez, 2001 .

From thermal catalysis to plasma catalysis: a review of surface processes and their characterizations

G. Oehrlein, S. Zhang, Shiqiang Zhang, 2021 .

Raman spectroscopy of surface layers on crystalline silicon

J. Tsang, G. Oehrlein, W. Thompson, 1985 .

Mechanistic aspects of plasma-enhanced catalytic methane decomposition by time-resolved operando diffuse reflectance infrared Fourier transform spectroscopy

Y. Li, G. Oehrlein, S. Zhang, 2020, Journal of Physics D: Applied Physics.

Chemical Mechanical Planarization of Copper Damascene Structures

Gottlieb S. Oehrlein, G. Oehrlein, J. King, 2000 .

Selective atomic layer etching of HfO2 over silicon by precursor and substrate-dependent selective deposition

E. Joseph, S. Engelmann, R. Bruce, 2020 .

Chemical dry etching of silicon nitride and silicon dioxide using CF4/O2/N2 gas mixtures

Gottlieb S. Oehrlein, G. Oehrlein, B. Kastenmeier, 1996 .

Mass spectrometric measurements on inductively coupled fluorocarbon plasmas: Positive ions, radicals and endpoint detection

Marc Schaepkens, Gottlieb S. Oehrlein, G. Oehrlein, 1999 .

Fast silicon etching using an expanding cascade arc plasma in a SF6/argon mixture

G. Oehrlein, D. Schram, G. Kroesen, 1992 .

Electron beam-induced etching of SiO2, Si3N4, and poly-Si assisted by CF4/O2 remote plasma

D. Rhinow, G. Oehrlein, K. Edinger, 2023, Journal of Vacuum Science & Technology A.

Fluorocarbon high‐density plasmas. II. Silicon dioxide and silicon etching using CF4 and CHF3

Olivier Joubert, Gottlieb S. Oehrlein, David Vender, 1994 .

Fluorocarbon high‐density plasmas. I. Fluorocarbon film deposition and etching using CF4 and CHF3

Ying Zhang, Gottlieb S. Oehrlein, David Vender, 1994 .

Fluorocarbon high density plasmas. VIII. Study of the ion flux composition at the substrate in electron cyclotron resonance etching processes using fluorocarbon gases

A. Wendt, G. Oehrlein, Ying Zhang, 1994 .

Etching of Si3N4 induced by electron beam plasma from hollow cathode plasma in a downstream reactive environment

V. Godyak, G. Oehrlein, K. Edinger, 2020 .

Electron beam injection from a hollow cathode plasma into a downstream reactive environment: Characterization of secondary plasma production and Si3N4 and Si etching

V. Godyak, G. Oehrlein, K. Edinger, 2020 .

Role of N2 addition on CF4/O2 remote plasma chemical dry etching of polycrystalline silicon

G. Oehrlein, B. Kastenmeier, P. J. Matsuo, 1997 .

Chemical downstream etching of silicon–nitride and polycrystalline silicon using CF4/O2/N2: Surface chemical effects of O2 and N2 additives

Gottlieb S. Oehrlein, G. Oehrlein, B. Kastenmeier, 1995 .

Plasma-based dry etching techniques in the silicon integrated circuit technology

Gottlieb S. Oehrlein, John F. Rembetski, G. Oehrlein, 1992, IBM J. Res. Dev..

Dry etching damage of silicon: A review

Gottlieb S. Oehrlein, G. Oehrlein, 1989 .

Fluorination of the silicon dioxide surface during reactive ion and plasma etching in halocarbon plasmas

G. Oehrlein, S. Robey, 1989 .

Molecular dynamics simulations of Ar+-induced transport of fluorine through fluorocarbon films

D. Graves, D. Humbird, G. Oehrlein, 2004 .

Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide

Eric A. Joseph, Christer Hedlund, Gottlieb S. Oehrlein, 2004 .

Influence of reactor wall conditions on etch processes in inductively coupled fluorocarbon plasmas

T. Standaert, G. Oehrlein, M. Schaepkens, 1998 .

Real-time measurements of plasma photoresist modifications: The role of plasma vacuum ultraviolet radiation and ions

David B. Graves, Gottlieb S. Oehrlein, D. Graves, 2012 .

Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication

D. Graves, R. Phaneuf, G. Oehrlein, 2011 .

Hydrogenation and surface density changes in hydrocarbon films during erosion using Ar/H2 plasmas

D. Graves, G. Oehrlein, N. Fox-Lyon, 2011 .

Surface etching mechanism of silicon nitride in fluorine and nitric oxide containing plasmas

G. Oehrlein, B. Kastenmeier, P. J. Matsuo, 2001 .

Effect of water vapor on plasma processing at atmospheric pressure: Polymer etching and surface modification by an Ar/H2O plasma jet

P. Bruggeman, P. Luan, G. Oehrlein, 2019, Journal of Vacuum Science and Technology.

Noninvasive picosecond ultrasonic detection of ultrathin interfacial layers: CFx at the Al/Si interface

G. Rubloff, H. Maris, G. Oehrlein, 1992 .

Reactive ion etching related Si surface residues and subsurface damage: Their relationship to fundamental etching mechanisms

Y. H. Lee, G. Oehrlein, 1987 .

Near-surface damage and contamination after CF/sub 4//H/sub 2/ reactive ion etching of Si

Y. H. Lee, R. Tromp, J. Tsang, 1985 .

Effect of radio frequency bias power on SiO2 feature etching in inductively coupled fluorocarbon plasmas

Gottlieb S. Oehrlein, G. Oehrlein, M. Schaepkens, 2000 .

Oxidation temperature dependence of the dc electrical conduction characteristics and dielectric strength of thin Ta2O5 films on silicon

G. Oehrlein, 1986 .

Some properties of crystallized tantalum pentoxide thin films on silicon

Gottlieb S. Oehrlein, A. Reisman, F. d'Heurle, 1984 .

Electrical properties of amorphous tantalum pentoxide thin films on silicon

A. Reisman, G. Oehrlein, 1983 .

Deactivation of lipopolysaccharide by Ar and H2 inductively coupled low-pressure plasma

D. Graves, G. Oehrlein, C. Barrett, 2014 .

Plasma Deactivation of Endotoxic Biomolecules: Vacuum Ultraviolet Photon and Radical Beam Effects on Lipid A

D. Graves, J. Chu, G. Oehrlein, 2013 .

Foundations of low-temperature plasma enhanced materials synthesis and etching

G. Oehrlein, S. Hamaguchi, 2018 .

On the Complex of the Oxygen Interstitial and the Silicon Interstitial in Silicon

G. Oehrlein, J. Lindström, J. Corbett, 1984, October 16.

RIE-induced damage and contamination in silicon

Y. H. Lee, G. Oehrlein, C. Ransom, 1989 .

Diffusion of phosphorus during rapid thermal annealing of ion‐implanted silicon

Stephan A. Cohen, T. Sedgwick, G. Oehrlein, 1984 .

Exact description and data fitting of ion‐implanted dopant profile evolution during annealing

F. Morehead, T. Sedgwick, Y. H. Lee, 1984 .

On the absence of post-plasma etch surface and line edge roughness in vinylpyridine resists

Robert L. Bruce, Carlton G Willson, Gottlieb S. Oehrlein, 2011 .

Surface morphology of oxidized and ion‐etched silicon by scanning tunneling microscopy

Randall M. Feenstra, Gottlieb S. Oehrlein, G. Oehrlein, 1985 .

Summary Abstract: Surface morphology of oxidized and ion‐etched silicon by scanning tunneling microscopy

G. Oehrlein, R. Feenstra, 1985 .

Grazing angle optical emission interferometry for end‐point detection

G. Oehrlein, D. Angell, 1991 .

Polymer etching by atmospheric‐pressure plasma jet and surface micro‐discharge sources: Activation energy analysis and etching directionality

R. Bruce, P. Luan, G. Oehrlein, 2018 .

Relationship between nanoscale roughness and ion-damaged layer in argon plasma exposed polystyrene films

David B. Graves, Robert L. Bruce, C. G. Willson, 2010 .

Remote plasma etching of silicon nitride and silicon dioxide using NF3/O2 gas mixtures

Gottlieb S. Oehrlein, J. Langan, G. Oehrlein, 1998 .

Near-surface modification of polystyrene by Ar+: Molecular dynamics simulations and experimental validation

S. Engelmann, C. Willson, R. Bruce, 2007 .

Infrared studies of gas phase and surface processes of the enhancement of catalytic methane decomposition by low temperature plasma

P. Luan, G. Oehrlein, M. Lai, 2019, Journal of Physics D: Applied Physics.

Achieving ultrahigh etching selectivity of SiO2 over Si3N4 and Si in atomic layer etching by exploiting chemistry of complex hydrofluorocarbon precursors

E. Joseph, S. Engelmann, R. Bruce, 2018, Journal of Vacuum Science & Technology A.

Silicon etching in NF3/O2 remote microwave plasmas

Gottlieb S. Oehrlein, J. Langan, G. Oehrlein, 1999 .

Investigation of Ni catalyst activation during plasma-assisted methane oxidation

G. Oehrlein, Yudong Li, Michael Hinshelwood, 2021, Journal of Physics D: Applied Physics.

Development of a Slurry Employing a Unique Silica Abrasive for the CMP of Cu Damascene Structures

J. E. Currie, G. Oehrlein, P. Wrschka, 2001 .

Poly(2-vinylnaphthalene)-block-poly(acrylic acid) Block Copolymer: Self-Assembled Pattern Formation, Alignment, and Transfer into Silicon via Plasma Etching

G. Oehrlein, R. Briber, Xin Zhang, 2011 .

Plasma–surface interaction at atmospheric pressure: A case study of polystyrene etching and surface modification by Ar/O2 plasma jet

P. Bruggeman, P. Luan, G. Oehrlein, 2017 .

Selective SiO2-to-Si3N4 etching in inductively coupled fluorocarbon plasmas: Angular dependence of SiO2 and Si3N4 etching rates

C. Hedlund, H. Blom, G. Oehrlein, 1998 .

Ion‐induced fluorination in electron cyclotron resonance etching of silicon studied by x‐ray photoelectron spectroscopy

D. Vender, G. Oehrlein, M. Haverlag, 1992 .

Transient fluorocarbon film thickness effects near the silicon dioxide/silicon interface in selective silicon dioxide reactive ion etching

M. Jaso, G. Oehrlein, 1988 .

Asymmetric microtrenching during inductively coupled plasma oxide etching in the presence of a weak magnetic field

Marc Schaepkens, Gottlieb S. Oehrlein, G. Oehrlein, 1998 .

Raman spectroscopy of reactive ion etching induced subsurface damage

I. Haller, J. Tsang, G. Oehrlein, 1985 .

Reactive Ion Etching of Silicon and Silicon Dioxide in CF 4 Plasmas Containing H 2 or C 2 F 4 Additives

G. Oehrlein, J. Simko, 1991 .

SiO2 Etching in High-Density Plasmas: Differences with Low-Density Plasmas

G. Oehrlein, 1997 .

Reactive Ion Etching of Silicon and Silicon Dioxide in CF4 Plasmas Containing H2 or C2F4 Additives.

G. Oehrlein, J. Simko, 1991 .

Chemical Mechanical Polishing of Al and SiO2 Thin Films: The Role of Consumables

D. A. Hansen, G. Oehrlein, T. Kuan, 1999 .

Study of near‐surface disorder and surface residues after reactive Ion etching of Silicon

J. Clabes, G. Oehrlein, Y. H. Lee, 1986 .

Rutherford backscattering studies of plasma‐etched silicon

G. Oehrlein, 1986 .

Anisotropic Dry Etching of S1O 2 on Si and its Impact on Surface and Near-Surface Properties of the Substrate.

J. Clabes, J. Tsang, G. Oehrlein, 1986 .

In situ ellipsometry and reflectometry during etching of patterned surfaces: Experiments and simulations

G. Oehrlein, M. Haverlag, 1992 .

Investigation of transient diffusion effects in rapid thermally processed ion implanted arsenic in silicon

Stephan A. Cohen, V. Deline, T. Sedgwick, 1985 .

Electron irradiation effects in edge-defined film-fed growth ribbon silicon

G. Oehrlein, J. Corbett, A. Jaworowski, 1983 .

On the Interaction of Cold Atmospheric Pressure Plasma with Surfaces of Bio-molecules and Model Polymers

P. Luan, G. Oehrlein, Joonil Seog, 2015, Plasma Chemistry and Plasma Processing.

Low‐Temperature Plasma‐Assisted Nanotransfer Printing between Thermoplastic Polymers

D. Y. Lee, C. Stafford, C. Soles, 2009 .

Silicon near‐surface disorder and etch residues caused by CCIF3/H2 reactive ion etching

S. Chakravarti, Y. H. Lee, G. Oehrlein, 1985 .

Using a quartz crystal microbalance for low energy ion beam etching studies

Marcus F. Doemling, Neal R. Rueger, G. Oehrlein, 2000 .

Selective SiO 2 -to-Si 3 N 4 etching in inductively coupled fluorocarbon plasmas: Angular dependence of SiO 2 and Si 3 N 4 etching rates

C. Hedlund, H. Blom, G. Oehrlein, 1998 .

Sidewall passivation during the etching of poly‐Si in an electron cyclotron resonance plasma of HBr

D. Vender, G. Oehrlein, M. Haverlag, 1994 .

Study of sidewall passivation and microscopic silicon roughness phenomena in chlorine‐based reactive ion etching of silicon trenches

Gottlieb S. Oehrlein, G. Oehrlein, J. F. Rembetski, 1990 .

Remote Plasma Processing

G. Oehrlein, 1997 .

Surface science issues in plasma etching

Marc Schaepkens, Gottlieb S. Oehrlein, Marcus F. Doemling, 1999, IBM J. Res. Dev..

Effect of surface derived hydrocarbon impurities on Ar plasma properties

V. Godyak, G. Oehrlein, N. Fox-Lyon, 2014 .

Electron, ion and vacuum ultraviolet photon effects in 193 nm photoresist surface roughening

David B. Graves, Robert L. Bruce, Gottlieb S. Oehrlein, 2010 .

Study of C4F8/CO and C4F8/Ar/CO plasmas for highly selective etching of organosilicate glass over Si3N4 and SiC

H. Anderson, F. Celii, G. Oehrlein, 2004 .

Role of the dense amorphous carbon layer in photoresist etching

John T. Fourkas, Zuleykhan Tomova, Adam Pranda, 2018 .

Correlation between Tribological Properties, sp²/sp³-Ratio and H-Content of Low-Wear Diamond-Like Carbon (DLC) Layers

W. Tillmann, E. Vogli, G. Oehrlein, 2012 .

Characterization of plasma catalytic decomposition of methane: role of atomic O and reaction mechanism

P. Bruggeman, G. Oehrlein, Jingkai Jiang, 2021, Journal of Physics D: Applied Physics.

Processing and Characterization of Silica Xerogel Films for Low-K Dielectric Applications

P. Wayner, T. Standaert, S. Nitta, 1999 .

Silicon–oxygen complexes containing three oxygen atoms as the dominant thermal donor species in heat‐treated oxygen‐containing silicon

G. Oehrlein, 1983 .

Isotope effects on plasma species of Ar/H2/D2 plasmas

G. Oehrlein, N. Fox-Lyon, 2014 .

Determination of Ar metastable atom densities in Ar and Ar/H2 inductively coupled low-temperature plasmas

V. Godyak, G. Oehrlein, V. Demidov, 2013 .

Fluorocarbon high density plasma. V. Influence of aspect ratio on the etch rate of silicon dioxide in an electron cyclotron resonance plasma

Ying Zhang, Olivier Joubert, Gottlieb S. Oehrlein, 1994 .

Asymptotic estimates of diffusion times for rapid thermal annealing

J. Fehribach, G. Oehrlein, R. Ghez, 1985 .

Fluorocarbon based atomic layer etching of Si3N4 and etching selectivity of SiO2 over Si3N4

G. Oehrlein, D. Metzler, Chen Li, 2016 .

Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma

G. Oehrlein, D. Metzler, Chen Li, 2016 .

Application of cyclic fluorocarbon/argon discharges to device patterning

E. Joseph, Yu Zhu, S. Engelmann, 2016 .

Model polymer etching and surface modification by a time modulated RF plasma jet: role of atomic oxygen and water vapor

P. Bruggeman, P. Luan, G. Oehrlein, 2017 .

Substrate interconnect technologies for 3-D MEMS packaging

Reza Ghodssi, Gottlieb S. Oehrlein, Tomohiro Iguchi, 2005 .

Reactive ion etching of silicon using bromine containing plasmas

Gottlieb S. Oehrlein, G. Oehrlein, T. D. Bestwick, 1990 .

Surface chemical changes of aluminum during NF3-based plasma processing used for in situ chamber cleaning

B. Ji, G. Oehrlein, E. Karwacki, 2004 .

Nonintrusive wafer temperature measurement using in situ ellipsometry

G. Oehrlein, G. Kroesen, T. Bestwick, 1991 .

Significance of plasma-photoresist interactions for atomic layer etching processes with extreme ultraviolet photoresist

E. Joseph, S. Engelmann, R. Bruce, 2020 .

Evolution of photoresist layer structure and surface morphology under fluorocarbon‐based plasma exposure

Sandra A. Gutierrez Razo, J. Fourkas, G. Oehrlein, 2019, Plasma Processes and Polymers.

Studies of the reactive ion etching of SiGe alloys

Gmw Gerrit Kroesen, Gottlieb S. Oehrlein, G. Oehrlein, 1991 .

Interaction of long-lived reactive species from cold atmospheric pressure plasma with polymers: Chemical modification by ozone and reactive oxygen-nitrogen species

P. Luan, G. Oehrlein, 2019, Journal of Vacuum Science & Technology A.

Principal Component Analysis of Optical Emission Spectroscopy and Mass Spectrometry: Application to Reactive Ion Etch Process Parameter Estimation Using Neural Networks

Reza Shadmehr, Paul B. Chou, Robert S. Jaffe, 1992 .

Selective Dry Etching of Germanium with Respect to Silicon and Vice Versa

M. Jaso, G. Oehrlein, P. Jones, 1991 .

Quenched‐in defects in flashlamp‐annealed silicon

R. Kleinhenz, J. Borenstein, G. Oehrlein, 1986 .

Reactive ion etching of SiGe alloys using fluorine‐containing plasmas*

Ying Zhang, James W. Corbett, Gottlieb S. Oehrlein, 1993 .

Selective dry etching of silicon with respect to germanium

James W. Corbett, Gottlieb S. Oehrlein, G. Oehrlein, 1990 .

The role of carbon in the precipitation of oxygen in silicon

D. Challou, G. Oehrlein, J. Corbett, 1981 .

Fabrication and Performance Limits of Sub-0.1 µm Cu Interconnects

Yiping Zhao, K. Rose, Tung-Sheng Kuan, 2000 .

Photoluminescence characterization of SF6O2 plasma etching of silicon

Anne Henry, Irina Buyanova, Gottlieb S. Oehrlein, 1996 .

Photoluminescence characterization of SF6–O2 plasma etching of silicon

Anne Henry, Irina Buyanova, Gottlieb S. Oehrlein, 1996 .

A Study of Luminescent Centers in Reactive‐Ion‐Etched Silicon

O. Awadelkarim, A. Henry, B. Monemar, 1991 .

Hydrogen plasma induced defects in silicon

Gottlieb S. Oehrlein, S. Jeng, G. Scilla, 1988 .

Photoluminescence of Defects Produced by Reactive Ion Etching of Silicon

G. Northrop, G. Oehrlein, 1986 .

Fabrication of Cu interconnects of 50 nm linewidth by electron-beam lithography and high-density plasma etching

T. Standaert, G. Oehrlein, Y. Hsu, 1998 .

O·, H·, and ·OH radical etching probability of polystyrene obtained for a radio frequency driven atmospheric pressure plasma jet

P. Bruggeman, P. Luan, Yashuang Zheng, 2020 .

Atmospheric pressure plasma treatment of lipopolysaccharide in a controlled environment

D. Graves, G. Oehrlein, Joonil Seog, 2013 .

Secondary ion mass spectrometry measurements of deuterium penetration into silicon by low pressure RF glow discharges

G. Scilla, G. Oehrlein, 1989 .

Microstructural studies of reactive ion etched silicon

S. Jeng, G. Oehrlein, 1987 .

Efficiency of oxygen plasma cleaning of reactive ion damaged silicon surfaces

S. Jeng, G. Scilla, G. Oehrlein, 1988 .

Molecular structure effects on dry etching behavior of Si-containing resists in oxygen plasma

Robert L. Bruce, Carlton G Willson, Gottlieb S. Oehrlein, 2010 .

Depth profiling of the Ge concentration in SiGe alloys using in situ ellipsometry during reactive‐ion etching

G. Oehrlein, G. Kroesen, M. Haverlag, 1993 .

Future of plasma etching for microelectronics: Challenges and opportunities

R. Gottscho, M. Sekine, M. Kushner, 2024, Journal of Vacuum Science & Technology B.

Photoresist erosion studied in an inductively coupled plasma reactor employing CHF3

N. R. Rueger, Marcus F. Doemling, G. Oehrlein, 1998 .

Molecular dynamics simulations of near-surface modification of polystyrene : Bombardment with Ar+ and Ar+/radical chemistries

S. Engelmann, C. Willson, R. Bruce, 2008 .

Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism

N. R. Rueger, T. Standaert, G. Oehrlein, 1999 .

Plasma catalysis: separating plasma and surface contributions for an Ar/N2/O2 atmospheric discharge interacting with a Pt catalyst

G. Oehrlein, Michael Hinshelwood, 2023, Plasma Sources Science and Technology.