T. Magee

发表

Physical and electrical properties of laser‐annealed ion‐implanted silicon

V. Deline, J. Gibbons, A. Gat, 1978 .

Thermal redistribution of oxygen during solid‐phase regrowth of arsenic‐implanted amorphized Si

B. Furman, D. Day, T. Magee, 1981 .

Growth of (100)CdTe films of high structural perfection on (100)GaAs substrates by molecular beam epitaxy

N. Giles, T. Magee, J. Schetzina, 1984 .

Growth of low dislocation density CdTe films on hydroplaned CdTe substrates by molecular beam epitaxy

T. Magee, T. Myers, J. Schetzina, 1983 .

Microscopic Defects and Infrared Absorption in Cadmium Telluride

J. Bean, T. Magee, J. Peng, 1975 .

Si epitaxial regrowth and grain structure of Al metallization on 〈100〉 Si

T. Magee, J. Peng, 1978 .

Behavior of implantation‐induced defects in HgCdTe

L. O. Bubulac, W. E. Tennant, T. J. Magee, 1982 .

Ion Implantation of as in CdTe: Electrical Characteristics and Radiation Damage

J. Gibbons, J. Bean, T. Magee, 1975 .

Seeded and limited seeding regrowth of Si over SiO2 by cw laser annealing

S. Graham, T. Magee, L. Palkuti, 1981 .

cw laser recrystallization of 〈100〉 Si on amorphous substrates

James F. Gibbons, T. J. Magee, K. F. Lee, 1979 .

New developments in the defect structure of implanted furnace-annealed silicon on sapphire☆

T. Magee, A. Knudson, E. Richmond, 1982 .

New Developments in the Defect Structure of Implanted Furnace-Annealed Silicon on Sapphire

T. Magee, A. Knudson, E. Richmond, 1981 .

Microstructural investigations of refractory metal silicide films on silicon

B. Rodrigues, T. Magee, H. Kawayoshi, 1984 .

Matrix study of material improvement of SOS by DSPEG

T. Magee, A. Knudson, H. Kawayoshi, 1987 .

cw laser anneal of polycrystalline silicon: Crystalline structure, electrical properties

James F. Gibbons, Levy Gerzberg, T. J. Magee, 1978 .

Scanning‐electron‐beam annealing of arsenic‐implanted silicon

R. Pease, T. Sigmon, J. Regolini, 1979 .

Electron Microscopy Studies of the Alloying Behavior of Au on GaAs

T. Magee, J. Peng, 1975 .

Heteroepitaxial growth of CdTe on GaAs by laser assisted deposition

J. Cheung, T. Magee, M. Khoshnevisan, 1983 .

Scanning UV Laser Removal of Contaminants from Semiconductor and Optical Surfaces

T. Magee, C. Leung, 1991 .

Low‐temperature redistribution and gettering of oxygen in silicon

B. Furman, T. Magee, C. A. Evans, 1981 .

Low-temperature gettering of Cr in GaAs

V. Deline, T. Magee, C. A. Evans, 1980 .

The role of stabilized back‐surface damage in controlling internal SiOx nucleation and denudation zones in Si

B. Furman, T. Magee, C. A. Evans, 1981 .

Recoil oxygen implants and thermal redistribution of oxygen in through‐oxide arsenic‐implanted Si

J. Gibbons, B. Furman, D. Day, 1981 .

Gettering of mobile oxygen and defect stability within back‐surface damage regions in Si

B. Furman, T. Magee, C. A. Evans, 1981 .

Front surface control of Cr redistribution and formation of stable Cr depletion channels in GaAs

D. Day, T. Magee, C. A. Evans, 1981 .

Low‐temperature redistribution of Cr in boron‐implanted GaAs in the absence of encapsulant stress

K. S. Lee, T. Magee, C. A. Evans, 1980 .

Alloying of Au layers and redistribution of Cr in GaAs

V. Deline, T. Magee, J. Peng, 1979 .

Gettering of Cr in GaAs by back surface mechanical damage

V. Deline, T. Magee, J. Peng, 1979 .

Back surface gettering and Cr out‐diffusion in VPE GaAs layers

V. Deline, T. Magee, J. Peng, 1979 .

Redistribution of oxygen within damage regions of boron‐implanted silicon

B. Furman, D. Day, T. Magee, 1981 .

Reply to ’’Comment on ’Gettering of mobile oxygen and defect stability within back‐surface damage regions in Si’ ’’

B. Furman, T. Magee, 1982 .

Stoichiometric disturbances in ion implanted GaAs and redistribution of Cr during annealing

J. Gibbons, D. Day, T. Magee, 1981 .

Incorporation of boron during the growth of GaAs single crystals

V. Deline, T. Magee, C. A. Evans, 1980 .

Annealing of damage and redistribution of Cr in boron‐implanted Si3N4‐capped GaAs

T. J. Magee, Charles A. Evans, T. Magee, 1980 .

Multilayered encapsulation of GaAs

J. Gibbons, A. Lidow, T. Magee, 1978 .

Investigation of solid–solid reactions of Au films on silicon

T. Magee, J. Peng, 1978 .

Rapid Diffusion and Gettering Studies of Bulk Oxygen in Silicon by Cs/SIMS

B. Furman, T. Magee, C. A. Evans, 1982 .

Use of a scanning cw Kr laser to obtain diffusion-free annealing of B-implanted silicon

V. Deline, J. Gibbons, A. Gat, 1978 .

Solid solubility of As in Si as determined by ion implantation and cw laser annealing

James F. Gibbons, T. J. Magee, Jongill Hong, 1979 .

Ion implantation of sulfur in Cr-doped InP at room temperature

J. Kasahara, J. Gibbons, T. Magee, 1980 .

A double‐layered encapsulant for annealing ion‐implanted GaAs up to 1100 °C

J. Gibbons, A. Lidow, T. Magee, 1977 .

cw laser assisted diffusion and activation of tin in GaAs from a SnO2/SiO2 source

J. Gibbons, T. Magee, R. Ormond, 1981 .

Characteristics of the material improvement process for silicon on sapphire by solid phase epitaxial regrowth

T. Magee, A. Knudson, C. Leung, 1984 .

Measurements of defects and strain in SOS films after cw Ar laser annealing in the liquid phase regime

T. Magee, H. Glass, I. Golecki, 1981 .

Laser-induced stresses in coated and uncoated targets

R. A. Armistead, T. Magee, P. Krehl, 1975 .

Recent progress on LADA growth of HgCdTe and CdTe epitaxial layers

J. Cheung, T. Magee, 1983 .

Resistivity reduction in heavily doped polycrystalline silicon using cw‐laser and pulsed‐laser annealing

J. Gibbons, T. Magee, J. Peng, 1981 .

Overview of microstructural defect development in interfacial regions of HgCdTe and CdTe layers grown on CdTe and alternate substrates

T. Magee, C. Leung, H. Kawayoshi, 1985 .

Thermal aging of Al thin films on GaAs

N. Johnson, T. Magee, J. Peng, 1976 .

Annealing of ion-implanted Si using a scanned CW laser system

V. Deline, J. Gibbons, L. Gerzberg, 1980 .

Summary Abstract: Liquid‐phase epitaxial growth of (HgCd)Te on Cd(TeSe) substrates

T. Magee, J. Schmit, H. K. Chung, 1985 .

Annealing of Hg1−xCdxTe: Hg loss rates and annealing of ion implantation damage

W. G. Opyd, James F. Gibbons, T. J. Magee, 1983 .

Fabrication of submicrometer MOSFET's using gas immersion laser doping (GILD)

P. Carey, T. Sigmon, T. Magee, 1986, IEEE Electron Device Letters.

Controlled Sectioning Technique for Small Gallium Arsenide Samples

T. Magee, J. Comer, 1972 .

Amorphous‐crystalline transition of arsenic‐implanted silicon caused by multiple‐pulsed ruby laser

T. Sigmon, J. Regolini, J. Gibbons, 1979 .