S. Sakai

发表

Fabrication and characterization of sub-0.6-µm ferroelectric-gate field-effect transistors

Shigeki Sakai, Le Van Hai, L. Hai, 2010 .

Operational method of a ferroelectric (Fe)-NAND flash memory array

K. Takeuchi, S. Sakai, Shouyu Wang, 2009 .

A zero VTH memory cell ferroelectric-NAND flash memory with 32% read disturb, 24% program disturb, 10% data retention improvement for enterprise SSD

K. Takeuchi, Mitsue Takahashi, S. Sakai, 2009, 2009 Proceedings of the European Solid State Device Research Conference.

Memory window widening of Pt/SrBi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors by nitriding Si

Mitsue Takahashi, S. Sakai, T. Horiuchi, 2009 .

64 kbit Ferroelectric-Gate-Transistor-Integrated NAND Flash Memory with 7.5 V Program and Long Data Retention

K. Takeuchi, Mitsue Takahashi, S. Sakai, 2012 .

3.3V Write-voltage Ir/Ca 0.2 Sr 0.8 Bi 2 Ta 2 O 9 /HfO 2 /Si Ferroelectric-gate Field-effect Transistors with 10 9 Endurance and Good Retention

S. Sakai, M. Takahashi, W. Zhang, 2016 .

3.3 V write-voltage Ir/Ca0.2Sr0.8Bi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors with 109 endurance and good retention

Wei Zhang, Mitsue Takahashi, S. Sakai, 2017 .

Unified theory for magnetic and electric field coupling in multistacked Josephson junctions

M. Machida, S. Sakai, 2004 .

Fluxons in thin-film superconductor-insulator superlattices

N. Pedersen, S. Sakai, P. Bodin, 1993 .

Metal-ferroelectric-insulator-semiconductor memory FET with long retention and high endurance

S. Sakai, R. Ilangovan, S. Sakai, 2004, IEEE Electron Device Letters.

Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory

Shigeki Sakai, Mitsue Takahashi, S. Sakai, 2010, Materials.

A study on Silicon Carbide (SiC) wafer using ion implantation

S. Sakai, Weijiang Zhao, K. Tobikawa, 2014, 2014 20th International Conference on Ion Implantation Technology (IIT).

Epitaxial structure SrTiO3〈011〉 on Si〈001〉

S. Migita, S. Sakai, 2001 .

Leakage current of multiferroic (Bi0.6Tb0.3La0.1)FeO3 thin films grown at various oxygen pressures by pulsed laser deposition and annealing effect

Can Wang, Mitsue Takahashi, S. Sakai, 2006 .

A Negative Word-line Voltage Step-Down Erase Pulse Scheme with ΔV TH =⅙ ΔV ERASE for Enterprise SSD Application Ferroelectric(Fe)-NAND Flash Memories

Ken Takeuchi, Shigeki Sakai, T. Hatanaka, 2009 .

Recent Advances in Ferroelectric-Gate Field-Effect-Transistor Technology

Mitsue Takahashi, S. Sakai, 2011 .

Large grain growth by annealing of Ag-covered Bi2Sr2CaCu2O8 + δ thin films and its application in the fabrication of intrinsic Josephson junctions

M. Haruta, S. Sakai, 2010 .

Fabrication of thin-film-type Bi2Sr2CaCu2O8+δ intrinsic Josephson junctions by pulsed-laser-deposition

M. Haruta, S. Sakai, E. Kume, 2009 .

Properties of a dielectric probe for scanning near-field millimeter-wave microscopy

S. Sakai, E. Kume, 2006 .

Recent Progress in Downsizing FeFETs for Fe-NAND Application

L. Hai, Mitsue Takahashi, S. Sakai, 2011 .

Bunched fluxon states in one-dimensional Josephson-junction arrays

B. Malomed, S. Sakai, A. Ustinov, 1998 .

Particle-free superconducting Bi2Sr2CaCu2Ox ultrathin films prepared by atomic-layer-controlled molecular beam epitaxy technique

S. Migita, H. Ota, S. Sakai, 1999 .

Memory properties of SrBi2Ta2O9 thin films prepared on SiO2/Si substrates

S. Sakai, S. Xiong, 1999 .

Novel process for widening memory window of sub-200 nm ferroelectric-gate field-effect transistor by ferroelectric coating the gate-stack sidewall

Wei Zhang, L. Hai, Mitsue Takahashi, 2014 .

100-nm-size ferroelectric-gate field-effect transistor with 108-cycle endurance

Wei Zhang, Mitsue Takahashi, S. Sakai, 2015 .

Static characteristic of a new quasiparticle injected superconducting weak link device

S. Sakai, H. Tateno, 1981 .

Compact model of ferroelectric-gate field-effect transistor for circuit simulation based on multidomain Landau–Kalathnikov theory

K. Fukuda, N. Miyata, Mitsue Takahashi, 2017 .

Super-relativistic fluxon in a Josephson multilayer: Experiment and simulation

J. Zitzmann, S. Sakai, A. Ustinov, 2002 .

A 0.5-V Six-Transistor Static Random Access Memory with Ferroelectric-Gate Field Effect Transistors

K. Miyaji, S. Tanakamaru, K. Takeuchi, 2010 .

A Digital Method of Gas Laser Etching for Oxide Superconductors

S. Sakai, Y. Kasai, Hiroshi Tokumoto Hiroshi Tokumoto, 1996 .

Area-Scalable 109-Cycle-High-Endurance FeFET of Strontium Bismuth Tantalate Using a Dummy-Gate Process

Mitsue Takahashi, S. Sakai, 2021, Nanomaterials.

Downsizing of High-Endurance and Long-Retention Pt/CaySr1−yBi2Ta2O9/(HfO2)x(Al2O3)1−x/Si FeFETs

Mitsue Takahashi, S. Sakai, 2020 .

Development of High-Endurance and Long-Retention FeFETs of Pt/CaySr1−yBi2Ta2O9/(HfO2)x(Al2O3)1−x/Si Gate Stacks

Mitsue Takahashi, S. Sakai, 2020 .

Dynamic Analog Characteristics of 10^9 Cycle-Endurance Low-Voltage Nonvolatile Ferroelectric-Gate Memory Transistors

Wei Zhang, Mitsue Takahashi, S. Sakai, 2017, 2017 IEEE International Memory Workshop (IMW).

A Negative Word-Line Voltage Negatively-Incremental Erase Pulse Scheme with ΔVTH = 1/6ΔVERASE for Enterprise Solid-State Drive Application Ferroelectric-NAND Flash Memories

K. Takeuchi, Mitsue Takahashi, S. Sakai, 2010 .

Fabrication and electrical properties of ferroelectric-gate FETS with epitaxial gate structures

S. Migita, H. Ota, S. Sakai, 2004 .

Epitaxial Bi4Ti3O12 thin film growth using Bi self-limiting function

S. Migita, H. Ota, S. Sakai, 1999 .

Pulsed laser deposition and ferroelectric properties of SrBi2Ta2O9 thin films

S. Migita, H. Ota, S. Sakai, 1999 .

Optimum ambient N2 pressure during HfAlO pulsed-laser deposition in Pt∕SBT∕HfAlO∕Si field effect transistors

S. Sakai, M. Takahashi, T. Horiuchi, 2008 .

A Ferroelectric NAND Flash Memory for Low-power and Highly Reliable Enterprise SSDs and a Ferroelectric 6T-SRAM for 0.5V Low-power CPU and SoC

K. Miyaji, S. Tanakamaru, K. Takeuchi, 2010 .

Investigation of Ferroelectric Grain Sizes and Orientations in Pt/CaxSr1–xBi2Ta2O9/Hf–Al–O/Si High Performance Ferroelectric-Gate Field-Effect-Transistors

Wei Zhang, Mitsue Takahashi, S. Sakai, 2019, Materials.

Growth Style of Bi4Ti3O12 Thin Films on CeO2/Ce0.12Zr0.88O2 Buffered Si Substrates

S. Migita, S. Sakai, Y. Tarui, 1999 .

ESR spectra of Mn2+ ions in polycrystalline ZnS films

S. Sakai, M. Adachi, N. Takeuchi, 1993 .

Ferroelectric-Gate Field Effect Transistor Memories

M. Okuyama, H. Ishiwara, S. Sakai, 2020, Topics in Applied Physics.

Laser Etching of Bi-Sr-Ca-Cu-O Superconducting Thin Films

S. Sakai, Y. Kasai, Tsunehiro Oohira, 1991 .

Annealing Behavior of Aluminum Implanted Germanium

H. Onoda, Y. Nakashima, S. Sakai, 2016, 2016 21st International Conference on Ion Implantation Technology (IIT).

Quasiparticle-Injected Superconducting Weak Link Device

S. Sakai, H. Tateno, 1981 .

Crystalline orientation control by the IVD method

S. Sakai, K. Ogata, Y. Andoh, 1989 .

The charging mechanism of insulated electrode in negative-ion implantation

H. Tsuji, S. Sakai, Y. Gotoh, 1995 .

Numerical study of fluxon dynamics in a system of two‐stacked Josephson junctions

N. Pedersen, A. Petraglia, S. Sakai, 1995 .

Large-area pulsed-laser deposition of dielectric and ferroelectric thin films

Shigeki Sakai, Naomasa Yui, Mitsue Takahashi, 2007 .

Resonant characteristics of twofold Josephson junctions with various critical current ratio

S. Sakai, E. Kume, H. Fujino, 2004 .

Atomic absorption spectroscopy system for flux monitoring and atomic-layer control of molecular beam epitaxial growth of BiSrCaCuO

S. Sakai, Y. Kasai, 1997 .

Negative-ion implantation technique

H. Tsuji, S. Sakai, Y. Gotoh, 1995 .

RF ion source for low energy ion implantation — beam profile control of a large-area ion source using 500-MHz discharge

S. Sakai, M. Tanjyo, M. Takahashi, 2001 .

Energy band of ternary alloy semiconductors—Calculation by a coherent‐potential approximation based on the method of linear combination of bond orbitals

T. Sugano, S. Sakai, 1979 .

A Study on the Effect of Ion Implant to Wafer Shape and the Ion Implanter to Process the Distorted Thin SiC Wafer

S. Sakai, Weijiang Zhao, K. Tobikawa, 2018, International Conference on Innovations in Information Technology.

Metal-free and gasless space charge compensation of low energy ion beam by using surface-carbonized silicon field emitter array

M. Takeuchi, H. Tsuji, S. Sakai, 2010 .

Extension of lifetime of silicon field emitter arrays in oxygen ambient by carbon negative ion implantation

T. Kimoto, M. Takeuchi, H. Tsuji, 2007, 2007 IEEE 20th International Vacuum Nanoelectronics Conference.

Electron emission properties of silicon field emitter arrays in gaseous ambient for charge compensation device

T. Kimoto, M. Takeuchi, H. Tsuji, 2007, 2007 IEEE 20th International Vacuum Nanoelectronics Conference.

Production of extremely low energy electron beam with silicon-based field emitter arrays and its application to space charge neutralization of low-energy and high-current ion beam

H. Tsuji, S. Sakai, Y. Gotoh, 2012, 25th International Vacuum Nanoelectronics Conference.

10.4: Differences in deceleration performance of electrons emitted from field emitter arrays with different electrode geometries

H. Tsuji, S. Sakai, Y. Gotoh, 2010, International Vacuum Nanoelectronics Conference.

Silicon field emission array as novel charge neutralization device for high current ion implanter

H. Tsuji, M. Nagao, S. Sakai, 2005 .

Application of silicon field emitter arrays for space-charge compensation of low energy ion beam

M. Takeuchi, S. Sakai, Y. Gotoh, 2009, International Vacuum Nanoelectronics Conference.

Electron emission properties of plasma treated silicon ield emission arrays in gaseous ambient

H. Tsuji, M. Nagao, S. Sakai, 2006, 2006 International Symposium on Discharges and Electrical Insulation in Vacuum.

Compensation of space charge for positive ion beams using electron injection and confinement in nonuniform magnetic fields

S. Sakai, D. Nicolaescu, Y. Gotoh, 2011 .

Development of low energy ion beam system for space charge compensation experiments.

M. Takeuchi, H. Tsuji, S. Sakai, 2008, Review of Scientific Instruments.

Energy Distribution of Electrons Emitted from Silicon Field Emitter Arrays

H. Tsuji, S. Sakai, Y. Gotoh, 2005 .

Ion beam neutralization using three-dimensional electron confinement by surface modification of magnetic poles

S. Sakai, D. Nicolaescu, Y. Gotoh, 2011 .

Neutralization of Space Charge Effects for Low Energy Ion Beams Using Field Emitters

S. Sakai, D. Nicolaescu, Y. Gotoh, 2008 .

High performance medium current ion implanter system EXCEED3000AH-G3

Kohei Tanaka, S. Sakai, M. Naito, 2006 .

Emittance of compact microwave ion source for low energy application.

H. Tsuji, S. Sakai, Y. Gotoh, 2014, The Review of scientific instruments.

A newly developed ECR ion source with wide dynamic range of beam current

S. Sakai, H. Fujita, Suguru Itoi, 2022, MRS Advances.

Performance of RF plasma flood gun for medium current implanter

S. Sakai, N. Hamamoto, M. Tanjyo, 2002, Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on.

Ion Beam Neutralization Using FEAs and Mirror Magnetic Fields

S. Sakai, Y. Gotoh, J. Ishikawa, 2011 .

P1–6: Compensation of divergence of space charge dominated ion beams using electron injection and confinement in non-uniform magnetic fields

S. Sakai, D. Nicolaescu, Y. Gotoh, 2010, International Vacuum Nanoelectronics Conference.

64 kbit Ferroelectric-Gate-Transistor-Integrated NAND Flash Memory with 7.5 V Program and Long Data Retention

K. Takeuchi, Mitsue Takahashi, S. Sakai, 2012 .

Characterization of Pt∕SrBi2Ta2O9∕Hf–Al–O∕Si field-effect transistors at elevated temperatures

Shigeki Sakai, S. Sakai, Qiuhong Li, 2006 .

Surface Morphology and Dielectric Properties of Stoichiometric and Off-Stoichiometric SrTiO3 Thin Films Grown by Molecular Beam Epitaxy

S. Migita, H. Ota, S. Sakai, 1999 .

Self-limiting process for the bismuth content in molecular beam epitaxial growth of Bi2Sr2CuOy thin films

S. Migita, H. Ota, S. Sakai, 1997 .

The field emitter array for neutralization of positive ion charge in ion implantation system

H. Tsuji, M. Nagao, S. Sakai, 2003, IEEE/CPMT/SEMI. 28th International Electronics Manufacturing Technology Symposium (Cat. No.03CH37479).

Decaborane implantation with the medium current implanter

T. Aoyama, Y. Nara, S. Sakai, 2005 .

Damage control with cluster ion implantation

H. Onoda, Y. Nakashima, S. Sakai, 2013, 2013 13th International Workshop on Junction Technology (IWJT).

Optimization of Compact Microwave Ion Source for Generation of High Current and Low Energy Ion Beam

H. Tsuji, S. Sakai, Y. Gotoh, 2011 .

Versatile medium ion implanter EXCEED2300V

S. Sakai, T. Kobayashi, T. Nagayama, 2002, Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on.

Plasma resonance in anisotropic layered high-T c superconductors

N. Pedersen, S. Sakai, 1999 .

Fluxon Observation Using a Josephson Sampler

H. Hayakawa, S. Sakai, H. Akoh, 1983 .

Electric-field effects in metal-insulator-superconductor diodes: possibility of singularity in capacitance-voltage relationships

S. Sakai, 1994 .

Diminution of the activity of B atoms by H-induced defects in H2 and B2H6 co-implanted Si

S. Sakai, K. Yokota, F. Miyashita, 2004 .

Interaction induced by nonuniform self-fields in stacks of two long Josephson junctions

G. Carapella, N. Pedersen, S. Sakai, 1999, IEEE transactions on applied superconductivity.

Maximum supercurrent in two Josephson-junction stacks: Theory and experiment

G. Carapella, N. Pedersen, S. Sakai, 1998 .

Memory properties of a ferroelectric gate field-effect transistor with an adjoining metal-ferroelectric-metal assistance cell

E. Suzuki, K. Ishii, S. Migita, 2003 .

All-perovskite-oxide ferroelectric memory transistor composed of Bi2Sr2CuOx and PbZr0.5Ti0.5O3 films

S. Migita, Shigeki Sakai, H. Fujino, 2001 .

In-situ growth of Bi-Sr-Ca-Cu oxide superconducting thin films by molecular beam epitaxy with a pure ozone source

S. Sakai, Y. Kasai, 1991 .

Characteristics of intrinsic Josephson junctions using a Bi2Sr2CaCu2Ox thin film estimated overall in a chip

X. Zhao, S. Sakai, E. Kume, 2004 .

Charging effects and ultraviolet irradiation for carbon films prepared by ion beam bombardment

S. Sakai, K. Ogata, Y. Andoh, 1991 .

Gate Materials and Fabrication-Processes of Metal-Ferroelectric-Insulator-Semiconductor Memory FETs with Long Data Retention

S. Sakai, 2006 .

Epitaxial Growth of Bi4Ti3O12/CeO2/Ce0.12Zr0.88O2 and Bi4Ti3O12/SrTiO3/Ce0.12Zr0.88O2 Thin Films on Si and Its Application to Metal-Ferroelectric-Insulator-Semiconductor Diodes

S. Migita, H. Ota, S. Sakai, 2000 .

Novel Application of FeFETs to NAND Flash Memory Circuits

Shigeki Sakai, Mitsue Takahashi, Mitsue Takahashi, 2020, Topics in Applied Physics.

Self-Aligned-Gate Metal/Ferroelectric/Insulator/Semiconductor Field-Effect Transistors with Long Memory Retention

Shigeki Sakai, Mitsue Takahashi, S. Sakai, 2005 .

Pt/SrBi2Ta2O9/Hf-Al-O/Si Field-Effect-Transistor with Long Retention Using Unsaturated Ferroelectric Polarization Switching

Shigeki Sakai, Mitsue Takahashi, S. Sakai, 2004 .

Lowered operation voltage in Pt/SBi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors by oxynitriding Si

Shigeki Sakai, Takeshi Horiuchi, Mitsue Takahashi, 2010 .

Threshold voltage adjustment of ferroelectric-gate field effect transistors by ion implantation

Shigeki Sakai, Takeshi Horiuchi, Mitsue Takahashi, 2009 .

Threshold-voltage distribution of Pt/SrBi2Ta2O9/Hf–Al–O/Si MFIS FETs

Shigeki Sakai, Takeshi Horiuchi, Mitsue Takahashi, 2008 .

Electrical properties of CaxSr1−xBi2Ta2O9 ferroelectric-gate field-effect transistors

Wei Zhang, Shigeki Sakai, Wei Zhang, 2013 .

Crystalline orientation control for aluminum nitride films prepared by ion-beam-assisted technology

S. Sakai, K. Ogata, Y. Andoh, 1991 .

Crystal structure of aluminum films prepared by ion beam assisted technology

S. Sakai, K. Ogata, Y. Andoh, 1991 .

Low-magnetic-field operations of intrinsic Josephson junctions with a long c-axis periodicity by artificial critical-current modulations

S. Sakai, Xia Zhao, 2007 .

Flux-flow cavity resonance modes in intrinsic Josephson junctions by Bi2Sr2CaCu2Ox thin films

H. Yamamori, S. Sakai, K. Matsumoto, 2002 .

Description of intrinsic Josephson junctions by the inductive coupling theory

H. Yamamori, S. Sakai, 2001 .

Submillimeter-band high-power generation using multilayered Josephson junctions

S. Sakai, A. Ustinov, 1998 .

RHEED Intensity Monitored Growth of Bi-Sr-Ca-Cu-O Superconductors

S. Sakai, Yuji Kasai Yuji Kasai, Peter Bodin Peter Bodin, 1992 .

Molecular beam epitaxial growth of SrO and CaO with RHEED intensity oscillation

S. Migita, S. Sakai, Y. Kasai, 1996 .

MBE Growth of BiSrCaCuO Films Using Flux Monitoring by Atomic Absorption Spectroscopy

H. Tanoue, S. Sakai, A. Suzuki, 1995 .

Dynamics of multiple-junction stacked flux-flow oscillators: Comparison between theory and experiment

H. Kohlstedt, S. Sakai, A. Ustinov, 1998 .

Composition analysis of modified layer in YBCO trilayer interface-engineered Josephson junctions

S. Sakai, E. Kume, E. Sugimata, 2004 .

Criteria for fluxon generation in long Josephson junctions by current pulses

S. Sakai, M. R. Samuelsen, 1987 .

Fluxon Feedback Oscillator

H. Hayakawa, S. Sakai, H. Akoh, 1984 .

Temperature dependence of composition ratio of Bi2Sr2CaCu2O8+δ film by PLD method

X. Zhao, S. Sakai, E. Kume, 2004 .

Millimeter-wave radiation from a Teflon dielectric probe and its imaging application

Eiji Kume, Shigeki Sakai, S. Sakai, 2008 .

Basic operation of novel ferroelectric CMOS circuits

Takeshi Horiuchi, K. Y. Yun, Mitsue Takahashi, 2008 .

Downsizing and memory array integration of Pt/SrBi2Ta2O9/Hf-Al-O/Si ferroelectric-gate field-effect transistors

Wei Zhang, L. Hai, Mitsue Takahashi, 2013, 2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings.

FeCMOS logic inverter circuits with nonvolatile-memory function

Shouyu Wang, Takeshi Horiuchi, Mitsue Takahashi, 2009, IEICE Electron. Express.

A time-domain analog weighted-sum calculation circuit using ferroelectric-gate field-effect transistors for artificial intelligence processors

Takashi Morie, Shigeki Sakai, Mitsue Takahashi, 2020, Japanese Journal of Applied Physics.