W. Kong

发表

Remote epitaxy through graphene enables two-dimensional material-based layer transfer

Jared M. Johnson, Shinhyun Choi, J. Kong, 2017, Nature.

Heterogeneous integration of single-crystalline complex-oxide membranes

Sang-Hoon Bae, Chang-Beom Eom, Caroline A. Ross, 2020, Nature.

Normal-incidence spectroscopic ellipsometry for critical dimension monitoring

Hsu-ting Huang, F. Terry, W. Kong, 2001 .

Polarity governs atomic interaction through two-dimensional materials

J. Grossman, A. Ougazzaden, Kyeongjae Cho, 2018, Nature Materials.

Graphene Buffer Layer on SiC as a Release Layer for High-Quality Freestanding Semiconductor Membranes.

R. Molnar, R. Myers-Ward, J. Robinson, 2021, Nano letters.

Recent progress in Van der Waals (vdW) heterojunction-based electronic and optoelectronic devices

Jin-Hong Park, Jaewoo Shim, Sang-hoon Bae, 2018, Carbon.

Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials

Sang-Hoon Bae, Xin Li, Yunbo Ou, 2018, Science.

p-type GaN grown by phase shift epitaxy

A. Steckl, April Brown, W. Kong, 2014 .

UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy

April Brown, M. Losurdo, W. Kong, 2017 .

Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying In composition

April Brown, M. Losurdo, W. Kong, 2016 .

Interference fringe-free transmission spectroscopy of amorphous thin films

F. Terry, J. Kanicki, W. Kong, 2000 .

Room temperature photoluminescence from InxAl(1−x)N films deposited by plasma-assisted molecular beam epitaxy

April Brown, M. Losurdo, W. Kong, 2014 .

Remote epitaxy

Young Joon Hong, Sang-hoon Bae, H. Kum, 2022, Nature Reviews Methods Primers.

Multiplication of freestanding semiconductor membranes from a single wafer by advanced remote epitaxy

J. Kong, J. Suh, Sang-hoon Bae, 2022, 2204.08002.

Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy

April Brown, M. Losurdo, W. Kong, 2015 .

Structural engineering of Ba0.5Sr0.5TiO3 epitaxial films

Yiqian Wang, Wenshuang Liang, P. Petrov, 2012 .

Chip-less wireless electronic skins by remote epitaxial freestanding compound semiconductors

Jiyeon Han, Hyung-jun Kim, T. Palacios, 2022, Science.

Multi-Step Rapid Thermal Annealing of Si-Implanted Gaas for Microwave Discrete Devices and Monolithic Integrated Circuits Fabrication

James C. M. Hwang, L. Lester, W. Kong, 1985 .

Impact of vicinal GaAs(001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs1−xBix

T. Kuech, S. Babcock, W. Kong, 2016 .

Integration of bulk materials with two-dimensional materials for physical coupling and applications

Sang-Hoon Bae, Jeehwan Kim, Hyun Kum, 2019, Nature Materials.

Growth and characterization of thin film electroluminescent devices fabricated using atomic layer epitaxy

W. Kong, 1996 .

Path towards graphene commercialization from lab to market

Jaewoo Shim, Jeehwan Kim, Wei Kong, 2019, Nature Nanotechnology.

Effect of strain in sputtered AlN buffer layers on the growth of GaN by molecular beam epitaxy

Junfei Li, W. Kong, J. Leach, 2015 .

Structural Characterization of the Nanocolumnar Microstructure of InAlN

T. H. Kim, W. Kong, J. Leach, 2015, Journal of Electronic Materials.

An Aluminum Nitride Integrated Photonics Platform for the Ultraviolet to Visible Spectrum

Dirk Englund, Hyowon Moon, Di Zhu, 2018, 2018 Conference on Lasers and Electro-Optics (CLEO).

High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process

Lingping Kong, Jing Kong, Haozhe Wang, 2023, Nature Nanotechnology.

Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy

D. Muller, Hyunseok Kim, Jaewoo Shim, 2020, Nature Nanotechnology.

Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices

Sang-Hoon Bae, Jeehwan Kim, Hyun Kum, 2019, Nature Electronics.

Growth of GaAs1−xBix by molecular beam epitaxy: Trade-offs in optical and structural characteristics

K. Forghani, T. Kuech, W. Kong, 2014 .

Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices

H. Kum, Yongmo Park, Jeehwan Kim, 2019, Nature Electronics.

Analysis of reflectometry and ellipsometry data from patterned structures

Fred L. Terry, F. Terry, W. Kong, 1998 .

Lattice Engineering of III-Nitride Heterostructures and Their Applications

W. Kong, 2016 .

Advanced Epitaxial Growth of LEDs on Van Der Waals Materials

Jeehwan Kim, W. Kong, Hyunseok Kim, 2021, Series in Display Science and Technology.

GaAs1−yBiy Raman signatures: illuminating relationships between the electrical and optical properties of GaAs1−yBiy and Bi incorporation

K. Forghani, T. Kuech, Y. Guan, 2015 .

The relationship between depth-resolved composition and strain relaxation in InAlN and InGaN films grown by molecular beam epitaxy

W. Kong, Jincheng Li, Tong-Ho Kim, 2013 .

Interface Capture Effect Printing Atomic‐Thick 2D Semiconductor Thin Films

X. Duan, Zhaoyang Lin, Lihong Li, 2022, Advances in Materials.

Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials

Yong Ju Park, D. Nezich, J. Moodera, 2018, Science.

Aluminum nitride integrated photonics platform for the ultraviolet to visible spectrum.

D. Englund, K. Berggren, Di Zhu, 2018, Optics Express.