J. Shim

J. Shim, D. Shin, S. Woo, 2008, OECC/ACOFT 2008 - Joint Conference of the Opto-Electronics and Communications Conference and the Australian Conference on Optical Fibre Technology.

Measuring the internal quantum efficiency of light-emitting diodes: towards accurate and reliable room-temperature characterization

J. Shim, Dong-Soo Shin, Dong‐Soo Shin, 2018, Nanophotonics.

Measuring the Internal Quantum Efficiency of Light-Emitting Diodes at an Arbitrary Temperature

J. Shim, Dong-Soo Shin, Dong-Pyo Han, 2018, IEEE Journal of Quantum Electronics.

Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics

H. Ryu, K. Ha, J. Shim, 2006 .

High-Performance Blue InGaN Laser Diodes With Single-Quantum-Well Active Layers

H. Ryu, J. Shim, J. Son, 2007, IEEE Photonics Technology Letters.

1.5-/spl mu/m InGaAsP-InP multigain-levered-MQW-DFB-LD with high-efficiency and large-bandwidth FM response

H. Yamazaki, J. Shim, M. Kitamura, 1995 .

Modified Shockley Equation for GaInN-Based Light-Emitting Diodes: Origin of the Power- Efficiency Degradation Under High Current Injection

S. Kamiyama, I. Akasaki, J. Shim, 2019, IEEE Journal of Quantum Electronics.

Threshold current reduction of GaInAs/GaInAsP/InP SCH quantum-well lasers with wire-like active region by using p-type substrates

H. Hirayama, S. Arai, Y. Miyamoto, 1992, IEEE Photonics Technology Letters.

Determination of the effect of a strain relaxation layer on the internal electric field measurement in an InGaN/GaN multiple-quantum-well structure by using electroreflectance spectroscopy

J. Shim, Dong-Soo Shin, D. Jang, 2013 .

Efficiency droop in AlGaInP and GaInN light-emitting diodes

E. Fred Schubert, Cheolsoo Sone, Jong-In Shim, 2012 .

Current- and temperature-dependent efficiency droops in InGaN-based blue and AlGaInP-based red light-emitting diodes

J. Shim, Dong-Soo Shin, Chan-Hyoung Oh, 2019, Japanese Journal of Applied Physics.

Review—Active Efficiency as a Key Parameter for Understanding the Efficiency Droop in InGaN-Based Light-Emitting Diodes

J. Shim, Dong-Soo Shin, Chan-Hyoung Oh, 2019, ECS Journal of Solid State Science and Technology.

Current–voltage characteristics of InGaN/GaN blue light-emitting diodes investigated by photovoltaic parameters

J. Shim, Dong-Soo Shin, Chan-Hyoung Oh, 2018, Japanese Journal of Applied Physics.

Internal Quantum Efficiency

J. Shim, 2017 .

Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes

J. Shim, Dong-Soo Shin, Dong-Pyo Han, 2015, IEEE Transactions on Electron Devices.

Droop studies for high-performance InGaN blue light-emitting diodes

J. Shim, Dong-Soo Shin, Dong-Pyo Han, 2013, 2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR).

Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures

Seoung-Hwan Park, J. Shim, 2013 .

Identifying the cause of thermal droop in GaInN-based LEDs by carrier- and thermo-dynamics analysis

Gyeong Won Lee, S. Kamiyama, I. Akasaki, 2020, Scientific Reports.

Effects of polarization field on vertical transport in GaN/AlGaN resonant tunneling diodes

Seoung-Hwan Park, J. Shim, 2012 .

Estimate of the nonradiative carrier lifetime in InGaN/GaN quantum well structures by using time-resolved photoluminescence

H. Ryu, J. Shim, Dong-Soo Shin, 2012 .

A new method for measurement of the fundamental device parameters in a GaN-based light emitting diode

J. Shim, Hyunsung Kim, 2007, 2007 Conference on Lasers and Electro-Optics - Pacific Rim.

Measuring the surface temperature of light-emitting diodes by thermoreflectance

Dong-Guang Zheng, J. Shim, Dong-Soo Shin, 2021, Japanese Journal of Applied Physics.

Structural Parameter Dependence of Light Extraction Efficiency in Photonic Crystal InGaN Vertical Light-Emitting Diode Structures

H. Ryu, J. Shim, 2010, IEEE Journal of Quantum Electronics.

Piezoelectric field in InGaN-based quantum wells grown on c-plane sapphire substrates measured by electroreflectance spectroscopy: from near-ultraviolet to green spectra

J. Shim, Dong-Soo Shin, A. H. Islam, 2020, Japanese Journal of Applied Physics.

New lambda /4 phase-shift method by conversion of refractive index difference and application to 1.5 mu m GaInAsP/InP DFB laser

S. Arai, Y. Suematsu, K. Komori, 1989 .

Electroluminescence from h-BN by using Al2O3/h-BN multiple heterostructure.

Dong Yeong Kim, Gyeong Won Lee, J. Kim, 2019, Optics express.

Measurement of the Piezoelectric Field in InGaN/AlGaN Multiple-Quantum-Well Near-Ultraviolet Light-Emitting Diodes by Electroreflectance Spectroscopy

J. Shim, Dong-Soo Shin, A. H. Islam, 2019, IEEE Journal of Quantum Electronics.

Factors Determining the Carrier Distribution in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

J. Shim, Dong-Soo Shin, Dong-Pyo Han, 2017, IEEE Journal of Quantum Electronics.

Analysis of carrier recombination dynamics in InGaN-based light-emitting diodes by differential carrier lifetime measurement

J. Shim, Dong-Soo Shin, Dong-Pyo Han, 2017 .

Wafer-Level Electroluminescence Metrology for InGaN Light-Emitting Diodes

J. Shim, Dong-Soo Shin, Dong-Pyo Han, 2016, IEEE Journal of Quantum Electronics.

Importance of the Radiative Recombination Rate to Efficiency Droop in InGaN-Based Light-Emitting Diodes

J. Shim, Dong-Soo Shin, Hyunsung Kim, 2014, 2014 Asia Communications and Photonics Conference (ACP).

Enhanced Light Emission from Type-II Red InGaN/GaNSb/GaN Quantum-Well Structures

Seoung-Hwan Park, J. Shim, Dong-Soo Shin, 2022, Advances in Condensed Matter Physics.

Effects of the number of quantum wells on the performance of near-ultraviolet light-emitting diodes

Dong-Guang Zheng, J. Shim, Dong-Soo Shin, 2015 .

Investigation of light extraction efficiency in AlGaN deep ultraviolet LEDs using FDTD simulations

H. Ryu, J. Shim, 2013, 2013 13th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).

Numerical investigation of light extraction efficiency in AlGaN deep ultraviolet light-emitting diodes

H. Ryu, J. Shim, I. Choi, 2013, 2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR).

Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures.

T. Seong, Y. Moon, H. Amano, 2018, Optics express.

Analysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodes

J. Shim, Dong-Pyo Han, Hyunsung Kim, 2014 .

Low-frequency noise characteristics of InGaN-based light-emitting diodes

J. Shim, Dong-Pyo Han, Chan-Hyoung Oh, 2015, 2015 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR).

Band gap shrinkage in GaInAs/GaInAsP/InP multi‐quantum well lasers

M. Asada, S. Arai, S. Park, 1992 .

Factors Determining the Carrier Distribution in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

J. Shim, Dong-Pyo Han, Dong‐Soo Shin, 2017, IEEE Journal of Quantum Electronics.

Theoretical studies on in-plane polarization characteristics of (11$$\bar{2}$$0) nonpolar InGaN/GaN quantum-well structures grown on InGaN substrates

Seoung-Hwan Park, J. Shim, Dong‐Soo Shin, 2022, Journal of the Korean Physical Society.

An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed In-Rich Active Areas

Jong-In Shim, Hyungsun Kim, J. Shim, 2011 .

Effects of Current, Temperature, and Chip Size on the Performance of AlGaInP-Based Red Micro-Light-Emitting Diodes with Different Contact Schemes

T. Seong, H. Amano, J. Shim, 2021 .

Nonradiative recombination mechanisms in InGaN/GaN-based light-emitting diodes investigated by temperature-dependent measurements

Jong-In Shim, Kyu-Sang Kim, Dong-Pyo Han, 2014 .

Optoelectronic Performance Variations in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes: Effects of Potential Fluctuation

Jong-In Shim, Abu Bashar Mohammad Hamidul Islam, J. Shim, 2018, Materials.

Strain analysis in pseudomorphically grown GaN-based multiple epitaxial layers

Jong-In Shim, Dong-Hyun Jang, J. Shim, 2007, SPIE/COS Photonics Asia.

Investigation of Light Extraction Efficiency in AlGaN Deep-Ultraviolet Light-Emitting Diodes

Han-Youl Ryu, Jong-In Shim, Il-Gyun Choi, 2013 .

Fabrication of Less Bowed Light-Emitting Diodes on Sapphire Substrates with a SiO2 Thin Film on Their Back Sides

Yongjo Park, E. Yoon, J. Shim, 2019, Journal of the Korean Physical Society.

Understanding Microscopic Properties of Light‐Emitting Diodes from Macroscopic Characterization: Ideality Factor, S‐parameter, and Internal Quantum Efficiency

J. Shim, Dong‐Soo Shin, 2022, physica status solidi (a).

On the ideality factor of the radiative recombination current in semiconductor light-emitting diodes

Jong-In Shim, Gyeong Won Lee, J. Shim, 2016 .

Rate equation analysis of efficiency droop in InGaN light-emitting diodes

Han-Youl Ryu, Jong-In Shim, H. Ryu, 2009 .

Generation of sidewall defects in InGaN/GaN blue micro-LEDs under forward-current stress

Tae Kyoung Kim, J. Kwak, J. Shim, 2022, Applied Physics Letters.

Enhanced Radiative Recombination Rate by Local Potential Fluctuation in InGaN/AlGaN Near-Ultraviolet Light-Emitting Diodes

Jong-In Shim, Abu Bashar Mohammad Hamidul Islam, Dong-Soo Shim, 2019, Applied Sciences.

Dependence of output properties on ridge structures and asymmetric facet reflectivity in 0.98-/spl mu/m InGaAs-InGaAsP-InGaP SQW FP-LDs

J. Shim, D. Jang, B. Han, 1998 .

A new polarization-insensitive 1.55-/spl mu/m InGaAsP-InGaAsP multiquantum-well electroabsorption modulator using a strain-compensating layer

J. Shim, K. Chung, 1999 .

Measurement of Internal Electric Field in GaN-Based Light-Emitting Diodes

Han-Youl Ryu, Jong-In Shim, Dong-Hyun Jang, 2012, IEEE Journal of Quantum Electronics.

A computational method of determining reflectance at abrupt waveguide interfaces

G. Kweon, J. Shim, I. Park, 1996 .

1.5 mu m GaInAsP/InP distributed reflector (DR) lasers with SCH structure

I. Morita, S. Arai, Y. Suematsu, 1990, IEEE Photonics Technology Letters.

Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence

Jong-In Shim, Dong-Pyo Han, J. Shim, 2012 .

Effect of current spreading on the efficiency droop of InGaN light-emitting diodes.

Han-Youl Ryu, Jong-In Shim, H. Ryu, 2011, Optics express.

V-pits as Barriers to Diffusion of Carriers in InGaN/GaN Quantum Wells

M. Sheen, Sungdug Kim, J. Shim, 2015, Journal of Electronic Materials.

Current, voltage and temperature distribution modeling of light-emitting diodes based on electrical and thermal circuit analysis

J. Shim, D. Shin, J. Yun, 2013 .

Three-Dimensional Analysis of Temperature Distributions Based on Circuit Modeling of Light-Emitting Diodes

J. Shim, Dong-Pyo Han, J. Yun, 2012, IEEE Transactions on Electron Devices.

1.5 /spl mu/m wavelength distributed reflector lasers with vertical grating

Masataka Ohta, Shigehisa Arai, Jong-In Shim, 2001 .

Interactive Study of Electroreflectance and Photocurrent Spectra in InGaN/GaN-Based Blue LEDs

Jong-In Shim, Abu Bashar Mohammad Hamidul Islam, J. Shim, 2017, IEEE Journal of Quantum Electronics.

Influence of carrier overflow on the forward-voltage characteristics of InGaN-based light-emitting diodes

J. Shim, Dong-Pyo Han, Hyunsung Kim, 2014 .

Interrelation Between the Internal Quantum Efficiency and Forward Voltage of Blue LEDs

J. Shim, Chan-Hyoung Oh, Dong‐Soo Shin, 2019, IEEE Photonics Technology Letters.

3-dimensional current flow analysis in InGaN light emitting diodes grown on sapphire substrate

J. Shim, 2009, International Conference on Numerical Simulation of Optoelectronic Devices.

Enhancing current spreading by simple electrode pattern design methodology in lateral GaN/InGaN LEDs

Jong-In Shim, Joosun Yun, J. Shim, 2009 .

Effect of electrode pattern on light emission distribution in InGaN/GaN light emitting diode

Jong-In Shim, Sungmin Hwang, J. Shim, 2008 .

Current spreading analysis in vertical electrode GaN-based blue LEDs

Sung Min Hwang, Joosun Yun, Jong In Shim, 2007, SPIE/COS Photonics Asia.

Study on the Current Spreading Effect of Blue GaN/InGaN LED using 3-Dimensional Circuit Modeling

J. Shim, Sungmin Hwang, 2007 .

Understanding and evaluating the mean photon energy and the external quantum efficiency of light‐emitting diodes

J. Shim, Sangjin Min, Dong‐Soo Shin, 2022, IET Optoelectronics.

Carrier accumulation in the active region and its impact on the device performance of InGaN-based light-emitting diodes

J. Shim, Dong-Pyo Han, Dong‐Soo Shin, 2017 .

Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes

J. Shim, Dong-Pyo Han, Dong‐Soo Shin, 2016 .

Investigation of Dominant Nonradiative Mechanisms as a Function of Current in InGaN/GaN Light-Emitting Diodes

Jong-In Shim, Il-Gyun Choi, Joosun Yun, 2013 .

Efficiency and Electron Leakage Characteristics in GaN-Based Light-Emitting Diodes Without AlGaN Electron-Blocking-Layer Structures

H. Ryu, Jong-Moo Lee, J. Shim, 2011, IEEE Photonics Technology Letters.

Effect of the p-type GaN thickness on the near-ultraviolet light-emitting diodes

J. Shim, Hyo-Shik Choi, Dong‐Soo Shin, 2015, 2015 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR).

Active Region Part B. Internal Quantum Efficiency

J. Shim, 2013 .

Thermodynamic analysis of GaInN-based light-emitting diodes operated by quasi-resonant optical excitation

S. Kamiyama, I. Akasaki, J. Shim, 2020 .

Investigation of carrier spill‐over in InGaN‐based light‐emitting diodes by temperature dependences of resonant photoluminescence and open‐circuit voltage

Jong-In Shim, Kyu-Sang Kim, Min-Goo Kang, 2013 .

Correlation between the efficiency droop and the blueshift of the electroluminescence in InGaN/GaN multiple-quantum-well blue light-emitting diodes

J. Shim, J. Yun, Dong‐Soo Shin, 2013 .

Origin of Operating Voltage Increase in InGaN-based Light-emitting Diodes under High Injection: Phase Space Filling Effect on Forward Voltage Characteristics

J. Shim, Dong-Pyo Han, Dong‐Soo Shin, 2017, 1705.08254.

Analysis of Time-resolved Photoluminescence of InGaN Quantum Wells Using the Carrier Rate Equation

Han-Youl Ryu, Jong-In Shim, H. Ryu, 2010 .

Forward-Capacitance Measurement on Wide-Bandgap Light-Emitting Diodes

Young‐Jin Kim, J. Shim, Dong-Pyo Han, 2016, IEEE Photonics Technology Letters.

A 10-Gb/s planar InGaAs/InP avalanche photodiode with a thin multiplication layer fabricated by using recess-etching and single-diffusion processes

J. Shim, Sungmin Hwang, Kyungyul Yoo, 2006 .

Reduction of effective linewidth enhancement factor alpha /sub eff/ of DFB lasers with complex coupling coefficients

K. Kudo, S. Arai, K. Komori, 1992, IEEE Photonics Technology Letters.

Analysis of the stress distribution in the nonuniformly bent GaN thin film grown on a sapphire substrate

J. Shim, D. Jang, Yuseong Jang, 2010 .