M. A. Herman

发表

Molecular Beam Epitaxy: Fundamentals and Current Status

M. A. Herman, H. Sitter, 1989 .

In-situ Analysis of Species and Transport

W. Richter, M. A. Herman, H. Sitter, 2004 .

Silicon-based heterostructures : Strained-layer growth by molecular beam epitaxy

M. A. Herman, 1999 .

Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques

D. Bimberg, M. A. Herman, J. Christen, 1991 .

Molecular Beam Epitaxy

W. Richter, M. A. Herman, H. Sitter, 1989 .

Growth mechanism in atomic layer epitaxy (III) reevaporation of Cd and Te from CdTe (111) surfaces and thick elemental deposits monitored by quadrupole-mass spectrometry

M. A. Herman, H. Sitter, W. Faschinger, 1988 .

Epitaxial growth and electronic structure of CdTe films

M. Pessa, M. A. Herman, O. Jylhä, 1984 .

Liquid Phase Epitaxy

W. Richter, M. A. Herman, H. Sitter, 2004 .

Atomic layer epitaxy of Cd1 − xMnxTe grown on CdTe (111)B substrates

M. Pessa, M. A. Herman, O. Jylhä, 1984 .

Heteroepitaxy; Growth Phenomena

W. Richter, M. A. Herman, H. Sitter, 2004 .

Fundamentals of the MBE Growth Process

M. A. Herman, H. Sitter, 1989 .

Hg1−xCdxTe‐Hg1−yCdyTe (0≤x, y≤1) heterostructures: Properties, epitaxy, and applications

M. Pessa, M. A. Herman, 1985 .

Sources of Atomic and Molecular Beams

M. A. Herman, H. Sitter, 1989 .

M. A. Herman, H. Sitter, 1996 .

Growth physics of silicon-based heterostructures in MBE processes

Marian A. Herman, M. A. Herman, 1997, Other Conferences.

Growth Processes in Strained-Layer MBE

M. A. Herman, H. Sitter, 1996 .

Approaches to understanding MBE growth phenomena

M. A. Herman, 1995 .

Physical principles of ultrahigh vacuum atomic layer epitaxy

M. A. Herman, 1997 .

A Method of Determining the Liquid Phase Epitaxial GaAs Growth Mechanism Based on Growth Rate Measurements

M. A. Herman, T. Bryśkiewicz, 1974 .

Quantum Mechanical Aspects

W. Richter, M. A. Herman, H. Sitter, 2004 .

Marian A. Herman, Wolfgang Richter, Helmut Sitter, 2004 .

Force field of some AB2C4 spinel compounds

M. A. Herman, H. Lauwers, 1980 .

Solid Phase Epitaxy

W. Richter, M. A. Herman, H. Sitter, 2004 .

MBE Growth Processes of Lattice-Matched Structures

M. A. Herman, H. Sitter, 1996 .

In-situ Surface Analysis

W. Richter, M. A. Herman, H. Sitter, 2004 .

Application Areas of Epitaxially Grown Layer Structures

W. Richter, M. A. Herman, H. Sitter, 2004 .

A method of investigation of heterostructure for junction lasers based on photoluminescence measurements

M. A. Herman, W. Lewandowski, T. Bryśkiewicz, 1975 .

Homo- and Heteroepitaxial Crystallization Phenomena

W. Richter, M. A. Herman, H. Sitter, 2004 .

Study on the force field of pyrite

M. A. Herman, H. Lauwers, 1974 .

Evaluation of growth temperature, refractive index, and layer thickness of thin ZnTe, MnTe, and CdTe films by in situ visible laser interferometry

M. A. Herman, H. Sitter, W. Faschinger, 1994 .

Atomic layer epitaxy and characterization of CdTe films grown on CdTe (110) substrates

M. Pessa, M. A. Herman, P. Huttunen, 1983 .

Growth Mechanism in Atomic Layer Epitaxy (I) Re‐evaporation of Cd and Te from CdTe(111) Surfaces Monitored by Auger Electron Spectroscopy

M. Pessa, M. A. Herman, O. Jylhä, 1986 .

Ultrahigh Vacuum Atomic Layer Epitaxy of Ternary II‐VI Semiconductor Compounds

M. A. Herman, J. Sadowski, 1999 .

ATOMIC LAYER EPITAXY : 12 YEARS LATER

M. A. Herman, 1991 .

The Problem of a Near Surface Quasi‐Gas Transition Layer in MBE

M. A. Herman, 1986 .

Growth Mechanism in Atomic Layer Epitaxy (II). A Model of the Growth Process of CdTe on CdTe (111) Substrates

M. Pessa, M. A. Herman, O. Jylhä, 1986 .

Surface morphology of CdTe films grown on CdTe (111) substrates by atomic layer epitaxy

M. Pessa, M. A. Herman, M. Vulli, 1985 .

Atomic layer epitaxy of CdTe on the polar (111)A and (111)B surfaces of CdTe substrates

M. Pessa, M. A. Herman, O. Jylhä, 1984 .

Postgrowth Characterization Methods

M. A. Herman, H. Sitter, 1989 .

Hard heteroepitaxy of molecular beam epitaxial grown PbTe on off oriented GaAs(100) substrates

M. A. Herman, J. Sadowski, 1995 .

MBE growth physics: application to device technology

M. A. Herman, H. Sitter, 1996 .

Hard Heteroepitaxy on 2° Off‐oriented GaAs (100) Substrates (I). The Occurrence of (100) and (111) Surface Orientations in MBE‐grown PbTe Films

K. Regiński, M. A. Herman, E. Dynowska, 1993 .

Near surface transition layer model of MBE growth

M. A. Herman, 1989 .

Experimental test of the transition layer model of atomic layer epitaxy

M. A. Herman, H. Sitter, P. Juza, 1988 .

Morphological stability in epitaxy of semiconductors — application to optoelectronic monolithically integrated structures

M. A. Herman, T. Andersson, 1986 .

Physical problems concerning effusion processes of semiconductors in molecular beam epitaxy

M. A. Herman, 1982 .

Metal Organic Vapor Phase Epitaxy

W. Richter, M. A. Herman, H. Sitter, 2004 .

High Vacuum Growth and Processing Systems

M. A. Herman, H. Sitter, 1989 .

In-Growth Characterization Techniques

M. A. Herman, H. Sitter, 1989 .

Force field of A(I)B(III)−S2 chalcopyrite compounds at zero wave vector

M. A. Herman, H. Lauwers, 1977 .

Optical simulation of the beam flux distribution from molecular beam epitaxy effusion sources

M. A. Herman, L. Michalak, B. Adamczyk, 1992 .

Epitaxy: Physical Principles and Technical Implementation

W. Richter, M. A. Herman, H. Sitter, 2004 .

Ultrahigh vacuum atomic layer epitaxy of CD1 − xMnxTe layers grown on (100) substrates: reflection mass spectrometry studies

M. A. Herman, J. Sadowski, 1997 .

Quasi-gas transition layers occurring in MBE growth of microdevices and superlattices

M. A. Herman, 1986 .

Molecular Beam Epitaxy: Fundamentals and Current Status

M. A. Herman, H. Sitter, 1989 .