Pinchaux

发表

Atomic structure and faulted boundaries in the GaAs(001) beta (2 x 4) surface as derived from x-ray diffraction and line-shape analysis.

Garreau, Sauvage-Simkin, Jedrecy, 1996, Physical review. B, Condensed matter.

Experimental valence-band structure of tin disulfide SnS2.

Bertrand, Pinchaux, Barski, 1985, Physical review. B, Condensed matter.

Structural characterization of epitaxial alpha -derived FeSi2 on Si(111).

Zheng, Sauvage-Simkin, Jedrecy, 1994, Physical review. B, Condensed matter.

Electronic structure of the Bi(111) surface.

Petroff, Pinchaux, Ynduráin, 1986, Physical review. B, Condensed matter.

Fractional stoichiometry of the GaAs(001)c(4 x 4) surface: An in-situ x-ray scattering study.

Robinson, Sauvage-Simkin, Jedrecy, 1989, Physical review letters.

Structural analysis of the (1 x 1)-Bi/GaAs(110) interface.

Mariani, Ruocco, Sauvage-Simkin, 1994, Physical Review B (Condensed Matter).

Experimental determination of local-bonding configuration at the early stages of growth of the heterogeneous Pt/InP(110) interface by synchrotron-radiation spectroscopy.

Rossi, Pinchaux, Carrière, 1988, Physical review. B, Condensed matter.

ZnTe/GaAs(001): Growth mode and strain evolution during the early stages of molecular-beam-epitaxy heteroepitaxial growth.

Tatarenko, Sauvage-Simkin, Jedrecy, 1993, Physical review. B, Condensed matter.

Commensurate and incommensurate phases at reconstructed (In,Ga)As(001) surfaces: x-ray diffraction evidence for a composition lock-in.

Garreau, Sauvage-Simkin, Pinchaux, 1995, Physical review letters.

Ultraviolet-photoemission-spectroscopy study of the interaction of atomic hydrogen with cleaved InP: A valence-band contribution.

Pinchaux, Bonnet, Hricovini, 1991, Physical review. B, Condensed matter.