J. Michaud

发表

The CMS experiment at the CERN LHC

João Paulo Teixeira, Ryszard S. Romaniuk, V. M. Ghete, 2008 .

Low frequency noise model in N-MOS transistors operating from sub-threshold to above-threshold regions

C. Cordier, J. Michaud, A. Boukhenoufa, 2005 .

Progresses in cMUT device fabrication using low temperature processes

D. Certon, J. Michaud, D. Alquier, 2014 .

New layer transfers obtained by the SmartCut process

F. Fournel, B. Ghyselen, C. Morales, 2003 .

Low temperature capacitive micromachined ultrasonic transducers (cMUTs) on glass substrate

D. Certon, J. Michaud, D. Alquier, 2016 .

Control of Al-implantation doping in 4H-SiC

J. Bluet, J. Michaud, J. Pernot, 2001 .

Activation of aluminum implanted at high doses in 4H–SiC

J. Bluet, J. Michaud, J. Pernot, 2000 .

Investigation of the Young’s Modulus and the Residual Stress of 4H-SiC Circular Membranes on 4H-SiC Substrates

D. Certon, J. Michaud, D. Alquier, 2019, Micromachines.

Structural and electrical characterizations of n-type implanted layers and ohmic contacts on 3C-SiC

T. Chassagne, M. Portail, J. Michaud, 2011 .

Evidence of electrical activity of extended defects in 3C-SiC grown on Si

T. Chassagne, M. Portail, J. Michaud, 2010 .

Low Specific Contact Resistance to 3C-SiC Grown on (100) Si Substrates

A. Leycuras, T. Chassagne, M. Portail, 2007 .

Optimisation of Ti Ohmic Contacts Formed by Laser Annealing on 4H-SiC

J. Michaud, D. Alquier, C. Berger, 2022, Materials Science Forum.

Detailed Experimental Study of Mean and Gradient Stresses in Thin 3C-SiC Films Performed Using Micromachined Cantilevers

T. Chassagne, M. Portail, J. Michaud, 2012 .

Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing 3C-SiC membranes

M. Portail, P. Vennégués, J. Michaud, 2017 .

A new approach for AFM cantilever elaboration with 3C-SiC

T. Chassagne, M. Portail, A. Madouri, 2012 .

Cw argon laser crystallization of silicon films: Structural properties

J. Michaud, R. Rogel, M. Sarret, 2006 .

Laser Annealing Simulations of Metallisations Deposited on 4H-SiC

D. Chouteau, J. Michaud, D. Alquier, 2019, Materials Science Forum.

Designing SiC Based CMUT Structures: An Original Approach and Related Material Issues

M. Portail, S. Chenot, J. Michaud, 2022, Materials Science Forum.

Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces

M. Capelle, G. Gautier, J. Billoué, 2012, Nanoscale Research Letters.

Ti–Ni ohmic contacts on 3C–SiC doped by nitrogen or phosphorus implantation

T. Chassagne, M. Portail, J. Michaud, 2010 .

Ti Thickness Influence for Ti/Ni Ohmic Contacts on N-Type 3C-SiC

T. Chassagne, M. Portail, J. Michaud, 2012 .

Structural Study of the Innovative 3C-SiC/Si/3C-SiC/Si Heterostructure for Electro-Mechanical Applications

M. Portail, P. Vennégués, J. Michaud, 2016 .

Polysilicon Thin-Film Transistors Based on Frequency Doubled cw-Nd: YVO4 Laser Crystallized Silicon

F. Falk, J. Michaud, G. Andrä, 2003 .

Smart-Cut® process using metallic bonding: Application to transfer of Si, GaAs, InP thin films

Bernard Aspar, Michel Bruel, E. Jalaguier, 1999 .

On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiC growth direction

M. Portail, P. Vennégués, J. Michaud, 2016 .

Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001)

T. Chassagne, M. Portail, P. Vennégués, 2016 .

Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition

M. Portail, P. Vennégués, J. Michaud, 2015 .

3C-SiC: New Interest for MEMS Devices

T. Chassagne, M. Portail, J. Michaud, 2014 .

Chapter 2 3 CSiC — From Electronic to MEMS Devices

M. Portail, J. Michaud, D. Alquier, 2018 .

New techniques of implantation for near-term applications

M. Bruel, A. Soubie, J. Michaud, 1981 .

Target heating during ion implantation and related problems

M. Bruel, J. Michaud, B. Berthet, 1979 .

Dose Influence on Physical and Electrical Properties of Nitrogen Implantation in 3C-SiC on Si

T. Chassagne, M. Portail, J. Michaud, 2012 .

Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials

T. Chassagne, M. Portail, J. Michaud, 2010 .

3C-SiC — From Electronic to MEMS Devices

M. Portail, J. Michaud, D. Alquier, 2015 .

Electrothermally driven high-frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy

T. Chassagne, M. Portail, A. Madouri, 2014 .

Accelerated Publication: Original 3C-SiC micro-structure on a 3C-SiC pseudo-substrate

T. Chassagne, M. Portail, J. Michaud, 2013 .

Electrical Characterization of Nitrogen Implanted 3C-SiC by SSRM and CTLM Measurements

T. Chassagne, M. Portail, J. Michaud, 2011 .

Laser irradiation influence on Si/3C-SiC/Si heterostructures for subsequent 3C-SiC membrane elaboration

M. Portail, J. Michaud, D. Alquier, 2016 .

Toward high-quality 3C–SiC membrane on a 3C–SiC pseudo-substrate

Daniel Alquier, M. Portail, J. Michaud, 2015 .

Silicon Growth on 3C-SiC(001)/Si(001): Pressure Influence and Thermal Effect

T. Chassagne, M. Portail, P. Vennégués, 2015 .

Elaboration of Monocrystalline Si Thin Film on 3C-SiC(100)/Si Epilayers by Low Pressure Chemical Vapor Deposition

T. Chassagne, M. Portail, J. Michaud, 2012 .

Micromachining of thin 3C-SiC films for mechanical properties investigation

T. Chassagne, M. Portail, J. Michaud, 2010 .

Analytical Model of Stress Relaxation in 3C SiC Layers on Silicon

T. Chassagne, M. Portail, A. Michon, 2011 .

Electrical, morphological and structural properties of Ti ohmic contacts formed on n-type 4H–SiC by laser thermal annealing

M. Bah, J. Michaud, D. Alquier, 2022, Materials Science in Semiconductor Processing.

Solid phase post-treatment of polysilicon films by a continuous argon laser

J. Michaud, O. Bonnaud, R. Rogel, 2004 .

Transfer of 3 in GaAs film on silicon substrate by proton implantation process

Bernard Aspar, Marc Zussy, Michel Bruel, 1998 .

Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon

T. Chassagne, M. Portail, A. Michon, 2012 .

Broad bandwidth air-coupled micromachined ultrasonic transducers for gas sensing.

I. Dufour, D. Certon, J. Michaud, 2021, Ultrasonics.

Aluminum Implantation in 4H-SiC: Physical and Electrical Properties

J. Michaud, D. Alquier, J. Biscarrat, 2013 .

CMUT Based Air Coupled Transducers for Gas-Mixture Analysis

I. Dufour, D. Certon, J. Michaud, 2018, 2018 IEEE International Ultrasonics Symposium (IUS).

How to Accurately Determine the Ohmic Contact Properties on n-Type 4H-SiC

J. Michaud, Clément Berger, Daniel Alquier, 2024, Electronics.

Proof of Concept and Preliminary Results of Gas Detection by Measuring the Admittance at the Resonance and Anti-resonance of an Uncoated CMUT

I. Dufour, D. Certon, J. Michaud, 2020, Frontiers in Mechanical Engineering.

High Frequency Gas Detection With an Uncoated CMUT Array by Impedance Resonant Frequency Measurement

I. Dufour, D. Certon, J. Michaud, 2019, 2019 IEEE SENSORS.

Effects of Aluminum Incorporation on the Young’s Modulus of 3C-SiC Epilayers

J. Michaud, D. Alquier, M. Zielinski, 2019, Materials Science Forum.