S. Rha

发表

High rate dry etching of InGaZnO by BCl3/O2 plasma

Jeong Hwan Kim, C. Hwang, K. Whang, 2011 .

Double-layered vertically integrated amorphous-In2Ga2ZnO7 thin-film transistor

Jung-Hae Choi, Cheol Seong Hwang, C. Hwang, 2013 .

Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature process

C. Hwang, S. Rha, T. Park, 2012 .

Study on the defects in metal–organic chemical vapor deposited zinc tin oxide thin films using negative bias illumination stability analysis

Jeong Hwan Kim, C. Hwang, Joohwi Lee, 2013 .

Theoretical and experimental studies on the electronic structure of crystalline and amorphous ZnSnO3 thin films

C. Hwang, D. Cho, Joohwi Lee, 2013 .

Conformal Formation of (GeTe2)(1–x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories

Byung Joon Choi, Seol Choi, C. Hwang, 2012 .

Optical modeling and experimental verification of light induced phenomena in In-Ga-Zn-O thin film transistors with varying gate insulator thickness

Jeong Hwan Kim, C. Hwang, Jeong hwan Kim, 2012 .

Impacts of Zr Composition in $\hbox{Hf}_{1-x} \hbox{Zr}_{x}\hbox{O}_{y}$ Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics

C. Hwang, N. Lee, K. Oh, 2011, IEEE Transactions on Electron Devices.

Controlling the Al-doping profile and accompanying electrical properties of rutile-phased TiO2 thin films.

C. Hwang, S. Kim, S. Rha, 2014, ACS applied materials & interfaces.

Phase change memory cell using Ge2Sb2Te5 and softly broken-down TiO2 films for multilevel operation

Byung Joon Choi, Seol Choi, C. Hwang, 2010 .

Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy

Jun Yeong Seok, C. Hwang, K. Kim, 2011 .

Performance Variation According to Device Structure and the Source/Drain Metal Electrode of a-IGZO TFTs

C. Hwang, S. Rha, T. Park, 2012, IEEE Transactions on Electron Devices.

Variation in the threshold voltage of amorphous-In2Ga2ZnO7 thin-film transistors by ultrathin Al2O3 passivation layer

C. Hwang, Seung Jun Lee, S. Rha, 2013 .

The charge trapping characteristics of Si3N4 and Al2O3 layers on amorphous-indium-gallium-zinc oxide thin films for memory application

C. Hwang, S. Rha, Un Ki Kim, 2012 .

The Electrical Properties of Asymmetric Schottky Contact Thin-Film Transistors with Amorphous-$\hbox{In}_{2}\hbox{Ga}_{2}\hbox{ZnO}_{7}$

C. Hwang, S. Rha, Un Ki Kim, 2013, IEEE Transactions on Electron Devices.

Turn-Around Effect of $V_{\rm th}$ Shift During the Positive Bias Temperature Instability of the n-Type Transistor With $\hbox{HfO}_{x}\hbox{N}_{y}$ Gate Dielectrics

Jeong Hwan Kim, C. Hwang, N. Lee, 2010, IEEE Electron Device Letters.

The mechanism for the suppression of leakage current in high dielectric TiO2 thin films by adopting ultra-thin HfO2 films for memory application

C. Hwang, S. Kim, Minha Seo, 2011 .

Ge2Sb2Te5 Charge Trapping Nanoislands with High-k Blocking Oxides for Charge Trap Memory

Jeong Hwan Kim, Byung Joon Choi, Seol Choi, 2009 .

Asymmetry in electrical properties of Al‐doped TiO2 film with respect to bias voltage

C. Hwang, S. Rha, W. Jeon, 2015 .

Controlling the Al-doping profile and accompanying electrical properties of rutile-phased TiO2 thin films.

C. Hwang, S. Kim, S. Rha, 2014, ACS applied materials & interfaces.