Ki-Se Kim

Effects of metal electrodes on the resistive memory switching property of NiO thin films

I. Yoo, Myoung-Jae Lee, Chang Bum Lee, 2008 .

Analysis of the reverse leakage current in AlGaN/GaN Schottky barrier diodes treated with fluorine plasma

Seung Jae Oh, Woo Jin Ha, Jae-Hoon Lee, 2012 .

Reduction in Shottky barrier height of AlGaN-based SBD with in-situ deposited silicon carbon nitride (SiCN) cap layer

Jae-Hoon Lee, W. Lim, Jung-Hee Lee, 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

Normally-Off Operation of Recessed-Gate AlGaN/GaN HFETs for High Power Applications

S. Pearton, Jae-Hoon Lee, W. Lim, 2011 .

Temperature dependence of current-voltage characteristics of Ni–AlGaN/GaN Schottky diodes

S. Pearton, Jae-Hoon Lee, W. Lim, 2010 .

Plasma damage-free sputtering of indium tin oxide cathode layers for top-emitting organic light-emitting diodes

T. Seong, Han‐Ki Kim, Sunho Jeong, 2005 .

Electromigration effect of Ni electrodes on the resistive switching characteristics of NiO thin films

I. Yoo, Myoung-Jae Lee, Chang Bum Lee, 2007 .

Ge nitride formation in N-doped amorphous Ge2Sb2Te5

Min-Gon Kim, Hyun-Joon Shin, Moonsup Han, 2007 .