G. Passemard

发表

Ultralow k using a plasma enhanced chemical vapor deposition porogen approach: Matrix structure and porogen loading influences

G. Gerbaud, L. Favennec, V. Jousseaume, 2007 .

Solution chemistry effects on cracking and damage evolution during chemical-mechanical planarization

S. Maitrejean, R. Dauskardt, P. Leduc, 2010 .

Analysis of Electromigration Voiding Phenomena in Cu Interconnects

G. Reimbold, G. Passemard, C. Cayron, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

ECD seed copper layer for seed enhancement in advanced interconnects

P. Haumesser, G. Passemard, T. Ritzdorf, 2003 .

Copper-SilK integration in a 0.18 /spl mu/m double level metal interconnect

Yves Morand, Christian Arvet, T. Mourier, 1999, Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247).

Porous low k pore sealing process study for 65 nm and below technologies

S. Maitrejean, R. Pantel, P. Haumesser, 2003, Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695).

Pore Sealing of a Porous Dielectric by Using a Thin PECVD a-SiC:H Conformal Liner

R. Pantel, P. Haumesser, V. Jousseaume, 2005 .

Investigation of Porogen Behavior during the Curing Process of Ultralow-k Spin-On Materials Chemical Transformation-Kinetics

V. Jousseaume, A. Zenasni, G. Passemard, 2007 .

Mechanical stress in PECVD a-SiC:H: aging and plasma treatments effects

N. Rochat, L. Favennec, V. Jousseaume, 2004 .

CMP-induced Peeling in Multi-level Ultra Low-k / Cu Interconnects

S. Maitrejean, P. Leduc, G. Passemard, 2006 .

Novel dielectric capping layer approach for advanced copper interconnects using chemical grafting

P. Haumesser, G. Passemard, C. Peyne, 2006 .

Supercritical Fluid Treatment to Improve Dielectric and Mechanical Properties of Porous ULK Thin Films

V. Jousseaume, G. Passemard, R. Mercier, 2006 .

Thermal furnace and Ultraviolet assisted curing impact on SiOCH spin-on ultra low dielectric constant materials

V. Jousseaume, A. Zenasni, G. Passemard, 2008 .

Precursor chemistry for ULK CVD

V. Rouessac, J. Durand, L. Favennec, 2005 .

Ultra low κ PECVD Porogen Approach: Matrix Precursors Comparison and Porogen Removal Treatment Study

J. Durand, V. Rouessac, J. Durand, 2005 .

Sol-Gel Derived Silica Layers for Low- k Dielectrics Applications

C. Guizard, G. Passemard, M. Moussavi, 2000 .

Integration of copper with an organic low-k dielectric in 0.12-µm node interconnect

J. Cluzel, D. Louis, M. Assous, 2002 .

Ultralow k films by using a plasma-enhanced chemical vapor deposition porogen approach: Study of the precursor reaction mechanisms

J. Deval, L. Favennec, V. Jousseaume, 2008 .

Porous extreme low κ (ELκ) dielectrics using a PECVD porogen approach

F. Fusalba, V. Rouessac, J. Durand, 2004 .

Crosslinking impact of mesoporous MSQ films used in microelectronic interconnections on mechanical properties

S. Maitrejean, M. Verdier, V. Jousseaume, 2006 .

K value improvement of ULK dielectrics by wet activation

P. Leduc, V. Jousseaume, A. Zenasni, 2006 .

PECVD versus spin-on to perform porous ULK for advanced interconnects: chemical composition, porosity and mechanical behavior

G. Gerbaud, L. Favennec, V. Jousseaume, 2006 .

Study of plasma mechanisms of hybrid a-SiOC: H low-k film deposition from decamethylcyclopentasiloxane and cyclohexene oxide

J. Deval, L. Favennec, V. Jousseaume, 2005 .

Electroless deposition of CoWP: Material characterization and process optimization on 300mm wafers

A. Roule, P. Haumesser, G. Passemard, 2006 .

Chemical etching solutions for air gap formation using a sacrificial oxide/polymer approach

J. Pontcharra, P. Besson, D. Bouchu, 2006 .

Plasma-enhanced-chemical-vapor-deposited ultralow k for a postintegration porogen removal approach

L. Favennec, V. Jousseaume, A. Zenasni, 2006 .

Cu/ULK integration using a post integration porogen removal approach

P. Leduc, P. Haumesser, M. Assous, 2004, Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729).

Fatigue of damascene copper lines under cyclic electrical loading

S. Maitrejean, S. Moreau, G. Passemard, 2007 .

Copper-SiOC-AirGap integration in a double level metal interconnect

Y. Morand, M. Assous, L. Ulmer, 2000, Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407).

Multi-Level Cu Interconnects Integration and Characterization with Air Gap as Ultra-Low K Material Formed using a Hybrid Sacrificial Oxide / Polymer Stack

O. Cueto, J. de Pontcharra, S. Orain, 2007, 2007 IEEE International Interconnect Technology Conferencee.

Copper cleaning in supercritical CO2 for the microprocessor interconnects

Olivier Renault, D. Rébiscoul, G. Passemard, 2008 .

Three dimensional chip stacking using a wafer-to-wafer integration

N. Kernevez, M. Zussy, Zhihong Huang, 2007, 2007 IEEE International Interconnect Technology Conferencee.

Challenges of back end of the line for sub 65 nm generation

J. Cluzel, O. Louveau, M. Fayolle, 2003 .

Integration evaluation of low permittivity silicon based spin on materials as IMD

G. Passemard, C. Lecornec, F. Pires, 1997, European Workshop Materials for Advanced Metallization,.

Porosimetry Measurements on Low Dielectric Constant—Thin Layers by Coupling Spectroscopic Ellipsometry and Solvent Adsorption-Desorption

F. Fusalba, F. Bertin, V. Rouessac, 2005 .

Study of fluorine stability in fluoro-silicate glass and effects on dielectric properties

G. Passemard, P. Fugier, O. Demolliens, 1997 .

Investigation of the interface stability in HfO 2 -metal electrodes

Sylvain Maitrejean, Bernard Guillaumot, T. Mourier, 2003 .

Inhomogeneous nucleation and growth of palladium and alloyed cobalt during self-aligned capping of advanced copper interconnects

P. Haumesser, G. Passemard, C. Cayron, 2010 .

Copper metallization for advanced interconnects: the electrochemical revolution

S. Maitrejean, P. Haumesser, G. Passemard, 2004, Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729).

Robust integration of an ULK SiOCH dielectric (k=2.3) for high performance 32nm node BEOL

N. Jourdan, A. Farcy, P. Brun, 2007, 2007 IEEE International Interconnect Technology Conferencee.

Impact of the CMP Process on the Multilevel Stack Mechanical Reliability

S. Maitrejean, S. Moreau, P. Leduc, 2008, 2008 10th Electronics Packaging Technology Conference.

Reliability challenges accompanied with interconnect downscaling and ultra low-k dielectrics

R. Fox, R. Hoofman, J. Michelon, 2005, Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005..

Understanding CMP-induced delamination in ultra low-k/Cu integration

V. Jousseaume, D. Scevola, P. Leduc, 2005, Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005..

Seed layer enhancement by electrochemical deposition: The copper seed solution for beyond 45nm

A. Roule, P. Haumesser, G. Passemard, 2007 .