T. Kanayama

K. Oiwa, T. Uyeda, T. Tada, 2000, Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387).

Spatial Distribution of Photocurrent in Si Stripes under Tilted Illumination Measured by Multimode Scanning Probe Microscopy

K. Fukuda, T. Tada, V. Poborchii, 2012 .

Fabrication of 10-nm Si pillars with self-formed etching masks

T. Tada, T. Kanayama, 1997 .

Electric field effect in amorphous semiconductor films assembled from transition-metal-encapsulating Si clusters

T. Kanayama, T. Miyazaki, N. Uchida, 2011 .

Fullerene Derivatives as Novel Resist Materials for Fabrication of MEMS Devices by Electron Beam Lithography

J. Preece, T. Tada, T. Kanayama, 1998 .

Formation of hydrogenated boron clusters in an external quadrupole static attraction ion trap.

Y. Ohishi, K. Kimura, T. Kanayama, 2008, The Journal of chemical physics.

Fabrication and characterization of AlxGa1-xAs-GaAs based nanofabricated resonant tunneling light emitting diodes

P. Vaya, S. Basu, T. Kanayama, 2001 .

Electroluminescent device based on AlxGa1−xAs–GaAs quantum well nanostructures

P. Vaya, T. Kanayama, M. Manimaran, 2000 .

Topology and energetics of metal-encapsulating Si fullerenelike cage clusters

H. Hiura, T. Kanayama, T. Miyazaki, 2001, cond-mat/0107564.

Multipole Ion Trap as Cluster-Ion Source

Y. Ohishi, K. Kimura, T. Kanayama, 2007 .

Subwavelength-Resolution Raman Microscopy of Si Structures Using Metal-Particle-Topped AFM Probe

T. Tada, V. Poborchii, T. Kanayama, 2005 .

New semiconducting silicides assembled from transition-metal-encapsulating Si clusters

T. Kanayama, T. Miyazaki, N. Uchida, 2011 .

Ab Initio Structure Characterization for the Amorphous Assembly of Si Clusters Encapsulating Transition Metal

T. Kanayama, T. Miyazaki, N. Uchida, 2011 .

Simultaneous measurement of potential and dopant atom distributions on wet-prepared Si(111):H surfaces by scanning tunneling microscopy

T. Kanayama, M. Nishizawa, L. Bolotov, 2007 .

Electronic properties of transition-metal-atom doped Si cage clusters

H. Hiura, T. Kanayama, T. Miyazaki, 2003 .

Stability and bonding nature for icosahedral or planar cluster of hydrogenated boron or aluminum

Y. Katsura, Y. Ohishi, K. Kimura, 2019, AIP Advances.

Two Dimensional Dopant Profiling by Scanning Tunneling Microscopy

T. Kanayama, M. Nishizawa, L. Bolotov, 2011 .

Measurements of Electrostatic Potential Across p–n Junctions on Oxidized Si Surfaces by Scanning Multimode Tunneling Spectroscopy

T. Tada, T. Kanayama, M. Nishizawa, 2010 .

Quantitative Evaluation of Dopant Concentration in Shallow Silicon p–n Junctions by Tunneling Current Mapping with Multimode Scanning Probe Microscopy

K. Fukuda, H. Arimoto, T. Tada, 2012 .

Inertness of SiC surfaces against Si atoms and clusters

T. Kanayama, Hideyuki Tanaka, 1999 .

Three-dimensional simulation of scanning tunneling microscopy for semiconductor carrier and impurity profiling

S. Satoh, Kunihiro Suzuki, K. Fukuda, 2014 .

Mass-selective resonance ion ejection from the external quadrupole static attraction ion trap

H. Hiura, T. Kanayama, 2001 .

Photoluminescence of strongly compensated GaAs dually implanted by Se+ (donor) and Zn+ (acceptor) ions

Y. Mitsuhashi, H. Tanoue, T. Kanayama, 1987 .

Formation of a new deep emission in Si + , S + , Se + , and Te + ion-implanted GaAs

H. Tanoue, T. Kanayama, Y. Makita, 1986 .

Mg+ implantation into AlxGa1−xAs

T. Kanayama, Y. Makita, T. Tsurushima, 1982 .

Maskless etching of a nanometer structure by focused ion beams

H. Tanoue, T. Kanayama, H. Hiroshima, 1983 .

Optical Properties of Se + - and Zn + -Implanted GaAs: Photoluninescence Behavior at the Band-Edge

T. Kanayama, Y. Makita, H. Tanaka, 1988 .

In‐depth distribution of ion irradiation defects evaluated by mobility of Al0.3Ga0.7As/GaAs two‐dimensional electron gas

T. Kanayama, M. Tacano, Y. Sugiyama, 1992 .

Synthesis of New Amorphous Semiconductors Assembled from Transition-Metal-Encapsulating Si Clusters

T. Tada, T. Kanayama, N. Uchida, 2008 .

Size-selective formation of tungsten cluster-containing silicon cages by the reactions of Wn+ (n=1–5) with SiH4

H. Hiura, T. Kanayama, K. Sugawara, 2004 .

Scanning-tunneling-microscope-assisted assembling of hydrogen-saturated silicon clusters on Si(111)-(7×7) surfaces

T. Kanayama, N. Uchida, L. Bolotov, 2001 .

Analysis of micro-Raman spectra combined with electromagnetic simulation and stress simulation for local stress distribution in Si devices

T. Tada, V. Poborchii, T. Kanayama, 2012 .

Thermal stability of amorphous Si-rich W silicide films composed of W-atom-encapsulated Si clusters

N. Okada, T. Kanayama, N. Uchida, 2017 .

Modulation of CoSi2/Si Schottky Barrier Height by Charge Transfer Doping Utilizing Cesium Segregation at the SiO2/Si Interface

T. Tada, T. Kanayama, K. Kimoto, 2007 .

Stability of Ta-encapsulating Si clusters on Si(111)-(7×7) surfaces

T. Kanayama, T. Miyazaki, N. Uchida, 2003 .

In situ Hall measurement of two-dimensional electron gas at Al0.3Ga0.7As/GaAs interface irradiated with 10-keV Ar ions

T. Kanayama, M. Tacano, Y. Sugiyama, 1992 .

Lateral Solid-Phase Epitaxy of Si Induced by Focused Ion Beams

H. Tanoue, T. Kanayama, M. Komuro, 1987 .

Formation Kinetics of Niobium and Molybdenum Silicides Induced by Ion Bombardment

H. Tanoue, T. Kanayama, T. Tsurushima, 1984 .

Time-reversal symmetry-breaking superconductivity in heavy-fermion PrOs4Sb12 detected by muon-spin relaxation.

H. Sato, H. Sugawara, Y. Aoki, 2003, Physical review letters.

Elastic behavior and 4f ground state of Pr ions in PrxLa1−xFe4P12

H. Sugawara, Y. Aoki, T. Kanayama, 2004 .

Elastic properties of PrxLa1−xFe4P12 in magnetic fields

H. Sugawara, Y. Aoki, T. Kanayama, 2004 .

Enhancement of the ultraviolet absorption and Raman efficiencies of a few nanometer thick Si-on-insulator

Y. Morita, S. Migita, T. Tada, 2012 .

Initial growth kinetics of positive and negative hydrogenated Si cluster ions under the presence of silane radicals

T. Kanayama, N. Kawashima, N. Uchida, 2019, Japanese Journal of Applied Physics.

A Quadrupole Ion Trap as Low-Energy Cluster Ion Beam Source

T. Kanayama, N. Uchida, L. Bolotov, 2003 .

Observation of Hydrogenated Silicon Clusters Si6Hx with Controlled Hydrogen Content on Si (111)-(7×7) Surfaces

T. Kanayama, N. Uchida, L. Bolotov, 2003 .

Ion Trapping by External Field of AC Electrical Quadrupole Superimposed on Static Attraction

T. Kanayama, 1994 .

Low-energy electron irradiation of fullerene films formed on Si(111)-(7×7) surfaces

T. Kanayama, L. Bolotov, 2002 .

RAPID COMMUNICATION: Ambient gas dependence of hydrogenated silicon clusters grown in an ion trap

Miyoko O. Watanabe, N. Kawashima, T. Kanayama, 1998 .

Ionization of decaborane with controlled hydrogen content by charge transfer from ambient gas

Y. Ohishi, K. Kimura, T. Kanayama, 2011 .

Synthesis and formation mechanism of hydrogenated boron clusters B(12)H(n) with controlled hydrogen content.

Y. Ohishi, K. Kimura, T. Kanayama, 2010, The Journal of chemical physics.

Energy barrier of structure transition from icosahedral B12H6+ to planar B12H5+ and B12H4+ clusters

Y. Ohishi, K. Kimura, T. Kanayama, 2009 .

Carborane superclusters formed by ion-molecule reactions in an ion trap

H. Hiura, T. Kanayama, 2005 .

Scanning tunnelling spectroscopy of atomic clusters deposited on oxidized silicon surfaces: induced surface dipole and resonant electron injection

T. Kanayama, N. Uchida, L. Bolotov, 2003 .

Nanofabrication using structure controlled hydrogenated Si clusters deposited on Si surfaces

Miyoko O. Watanabe, T. Kanayama, N. Uchida, 2000 .

Three types of stable structures of hydrogenated silicon clusters

T. Kanayama, T. Miyazaki, H. Murakami, 1997 .

Injection of Mass-Selected Ions into a Quadrupole Ion Trap

T. Kanayama, R. Palmer, H. Murakami, 1997 .

Growth of hydrogenated Si clusters using a quadrupole ion trap

T. Kanayama, H. Murakami, 1995 .

Ultraviolet Raman spectra of single uncoated and SiO2-coated silicon-on-insulator nanowires: Phonon boundary scattering, wave-vector relaxation and stress

Y. Morita, T. Tada, V. Poborchii, 2013 .

Advanced Scanning Tunneling Microscopy for Nanoscale Analysis of Semiconductor Devices

T. Kanayama, L. Bolotov, 2016 .

Scanning resonant tunneling spectroscopy of fullerene molecules on Si surfaces for carrier density profiling across p-n junctions

T. Kanayama, L. Bolotov, T. Okui, 2005 .

Deep-Penetration Mechanism of Ion-Irradiation Defects in Al 0.3 Ga 0.7 As/GaAs Heterostructure Investigated by In Situ Hall Measurement

T. Kanayama, Y. Sugiyama, Y. Takeuchi, 1992 .

Exposure mechanism of fullerene derivative electron beam resists

Richard E. Palmer, Alex P. G. Robinson, Jon A. Preece, 1999 .

Fermi-level depinning and contact resistance reduction in metal/n-Ge junctions by insertion of W-encapsulating Si cluster films

N. Okada, T. Kanayama, N. Uchida, 2014 .

Scanning tunneling microscopy detection of individual dopant atoms on wet-prepared Si(111):H surfaces

T. Tada, T. Kanayama, M. Nishizawa, 2006 .

3D modeling based on current continuity for STM carrier profiling of semiconductor devices

K. Fukuda, H. Arimoto, T. Tada, 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices.

Carrier concentration profiling on oxidized surfaces of Si device cross sections by resonant electron tunneling scanning probe spectroscopy

T. Kanayama, M. Nishizawa, Y. Miura, 2008 .

Electrostatic Potential Fluctuations on Oxide-Passivated Si(111) Surfaces Measured Using Integrated Scanning Probe Microscopy

T. Tada, T. Kanayama, M. Nishizawa, 2011 .

Performance and principle of operation of GaAs ballistic FET

N. Hashizume, M. Kawashima, K. Tomizawa, 1983, 1983 International Electron Devices Meeting.

High-spatial-resolution Raman microscopy of stress in shallow-trench-isolated Si structures

T. Tada, V. Poborchii, T. Kanayama, 2006 .

Polarized Raman microscopy of anisotropic stress relaxation in strained-Si-on-insulator stripes

T. Tada, V. Poborchii, T. Kanayama, 2011 .

Mechanical Stress Evaluation of Si Metal–Oxide–Semiconductor Field-Effect Transistor Structure Using Polarized Ultraviolet Raman Spectroscopy Measurements and Calibrated Technology-Computer-Aided-Design Simulations

S. Satoh, H. Arimoto, T. Tada, 2011 .

Observation of the forbidden doublet optical phonon in Raman spectra of strained Si for stress analysis

T. Tada, V. Poborchii, T. Kanayama, 2010 .

Optimization of tip material and shape for near-UV TERS in Si structures

Toshihiko Kanayama, Tetsuya Tada, T. Tada, 2009 .

Edge-enhanced Raman scattering in Si nanostripes

T. Tada, V. Poborchii, T. Kanayama, 2009 .

Study of stress in a shallow-trench-isolated Si structure using polarized confocal near-UV Raman microscopy of its cross section

T. Tada, V. Poborchii, T. Kanayama, 2007 .

Synthesis of silicon and molybdenum–silicide nanocrystal composite films having low thermal conductivity

K. Kurosaki, H. Muta, Y. Ohishi, 2013 .

Reduction of thermal conductivity in semiconducting composite films consisting of silicon and transition-metal silicide nanocrystals

K. Kurosaki, Y. Ohishi, T. Tada, 2013 .

Si pillar photonic crystal slab with linear defects: transmittance and waveguide properties

T. Tada, V. Poborchii, T. Kanayama, 2002 .

Polysubstituted derivatives of triphenylene as high resolution electron beam resists for nanolithography

Kenneth D. M. Harris, Richard E. Palmer, Alex P. G. Robinson, 2000 .

10 nm scale electron beam lithography using a triphenylene derivative as a negative/positive tone resist

Kenneth D. M. Harris, Richard E. Palmer, Alex P. G. Robinson, 1999 .

Measurement of virtual crossover in liquid gallium ion source

H. Tanoue, T. Kanayama, H. Hiroshima, 1983 .

Thermal desorption of Si clusters from Si and Si-deposited Ta surfaces

Toshihiko Kanayama, T. Kanayama, Hideyuki Tanaka, 1997 .

Helium ion microscope characterization for Cu / low-k interconnects - SE imaging and focused helium ion beam luminescence detection -

T. Kanayama, T. Iijima, S. Ogawa, 2011, 2011 IEEE International Interconnect Technology Conference.

Amorphous Si-rich tungsten silicide with a low work function near the conduction band edge of Si

N. Okada, T. Kanayama, S. Ogawa, 2020, Applied Physics Express.

Effects of Electron Irradiation on Two-Dimensional Electron Gas in AlGaAs/GaAs Heterostructure

T. Kanayama, S. Ichimura, Y. Sugiyama, 1993 .

Three-dimensional readout of flash x-ray images of living sperm in water by atomic-force microscopy.

T Kanayama, M. Ono, T. Tomie, 1991, Science.

Electronic properties of W-encapsulated Si cluster film on Si (100) substrates

T. Tada, T. Kanayama, S. Park, 2012 .

Electrical properties of amorphous and epitaxial Si-rich silicide films composed of W-atom-encapsulated Si clusters

N. Okada, T. Kanayama, N. Uchida, 2015 .

Low-barrier heterojunction of epitaxial silicide composed of W-encapsulating Si clusters with n-type Si

N. Okada, T. Kanayama, N. Uchida, 2012 .

First-principles theory for Si-based, atomically thin layered semiconductor crystal

T. Kanayama, T. Miyazaki, 2007 .

Local modification of electronic structure of Si (111)-7×7 surfaces by forming molybdenum-encapsulating Si clusters

T. Kanayama, N. Uchida, L. Bolotov, 2007 .

Ultrathin Layered Semiconductor: Si-Rich Transition Metal Silicide

T. Kanayama, T. Miyazaki, 2007 .

Stabilization mechanism of Si 12 cage clusters by encapsulation of a transition-metal atom: A density-functional theory study

T. Kanayama, T. Miyazaki, N. Uchida, 2006 .

A Fullerene derivative as an electron beam resist for nanolithography

Richard E. Palmer, Alex P. G. Robinson, Jon A. Preece, 1998 .

Enhancement of the Strained Si Forbidden Doublet Transverse Optical Phonon Raman Band for Quantitative Stress Measurement

T. Tada, V. Poborchii, T. Kanayama, 2012 .

Study of stress distribution in a cleaved Si shallow trench isolation structure using confocal micro-Raman system

T. Tada, V. Poborchii, T. Kanayama, 2010 .

Reflection and transmission of light in the photonic band gap range of triangular lattice of Si nanopillars with period

T. Tada, V. Poborchii, T. Kanayama, 2002 .

Fabrication of Photonic Crystals Using Metal Clusters as Nuclei for Self-formation of Etching Masks

T. Tada, V. Poborchii, T. Kanayama, 2000 .

A visible–near infrared range photonic crystal made up of Si nanopillars

Toshihiko Kanayama, Tetsuya Tada, T. Tada, 1999 .

Fabrication of Photonic Crystals Consisting of Si Nanopillars by Plasma Etching Using Self-Formed Masks

T. Tada, T. Tada, T. Kanayama, 1999, Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International Microprocesses and Nanotechnology Conference.

Mg+ and Be+ ion implantation into AlxGa1−xAs

H. Tanoue, T. Kanayama, Y. Makita, 1983 .

A Micro-Coordinate Measurement Machine (CMM) for Large-Scale Dimensional Measurement of Micro-Slits

Kazuhiko Takahashi, Wei Gao, So Ito, 2016 .

Multi-adduct derivatives of C60 for electron beam nano-resists

J. Preece, T. Tada, T. Kanayama, 2002 .

Photoluminescence of nitrogen (N)‐implanted and N‐free In0.30Ga0.70P grown by liquid phase epitaxy

T. Kanayama, A. Fujimoto, Y. Makita, 1980 .

Regular array of Si nanopillars fabricated using metal clusters

Toshihiko Kanayama, Tetsuya Tada, T. Tada, 1998 .

Annealing Behavior of Irradiation-Induced Damage in an AlGaAs/GaAs Heterostructure by Low-Energy Electron Beam

T. Kanayama, S. Ichimura, T. Wada, 1994 .