Y. Negoro

发表

High‐voltage 4H‐SiC pn diodes fabricated by p‐type ion implantation

H. Matsunami, T. Kimoto, Y. Negoro, 2003 .

Carrier compensation near tail region in aluminum- or boron-implanted 4H-SiC(0001)

Tsunenobu Kimoto, Hiroyuki Matsunami, H. Matsunami, 2005 .

Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing

H. Matsunami, T. Kimoto, Y. Negoro, 2004 .

Electronic behaviors of high-dose phosphorus-ion implanted 4H-SiC(0001)

H. Matsunami, T. Kimoto, Y. Negoro, 2004 .

Suppressed surface‐recombination structure and surface passivation for improving current gain of 4H‐SiC BJTs

Y. Negoro, K. Nonaka, H. Iwakuro, 2009 .

Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation

H. Matsunami, T. Kimoto, N. Miyamoto, 2002 .

Electrical activation of high-concentration aluminum implanted in 4H-SiC

H. Matsunami, T. Kimoto, G. Pensl, 2004 .

Embedded epitaxial growth of 4H-SiC on trenched substrates and pn junction characteristics

H. Matsunami, T. Kimoto, R. K. Malhan, 2006 .

Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap

H. Matsunami, T. Kimoto, Y. Negoro, 2004 .

Epitaxial Growth and Device Processing of SiC on Non-Basal Planes

H. Matsunami, T. Kimoto, H. Yano, 2004 .

Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

H. Matsunami, T. Kimoto, K. Fujihira, 2002 .

Defect Formation in (0001)- and (112̄0)-Oriented 4H-SiC Crystals P+-Implanted at Room Temperature

H. Matsunami, T. Kimoto, Y. Negoro, 2004 .

Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H–SiC (112̄0)

H. Matsunami, T. Kimoto, N. Miyamoto, 2002 .

Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20)

H. Matsunami, T. Kimoto, N. Miyamoto, 2002 .

Abnormal Out-Diffusion of Epitaxially Doped Boron in 4H–SiC Caused by Implantation and Annealing

H. Matsunami, T. Kimoto, G. Pensl, 2007 .

Low Sheet Resistance of High-Dose Aluminium Implanted 4H-SiC using (11-20) Face

H. Matsunami, T. Kimoto, G. Pensl, 2004 .

Technological Aspects of Ion Implantation in SiC Device Processes

H. Matsunami, T. Kimoto, Y. Negoro, 2005 .

Aluminum-Ion Implantation into 4H-SiC (11-20) and (0001)

H. Matsunami, T. Kimoto, Y. Negoro, 2004 .

Recent Progress in SiC Epitaxial Growth and Device Processing Technology

H. Matsunami, T. Kimoto, H. Yano, 2001 .

Suppressed surface‐recombination structure and surface passivation for improving current gain of 4H‐SiC BJTs

Y. Negoro, K. Nonaka, H. Iwakuro, 2009 .

Reduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETs

T. Kimoto, J. Suda, Y. Negoro, 2006 .

A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT

Akihiko Horiuchi, Y. Negoro, Masaaki Shimizu, 2009 .

High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation

H. Matsunami, T. Kimoto, N. Miyamoto, 2002 .

Electrical Behavior of Implanted Aluminum and Boron near Tail Region in 4H-SiC after High-Temperature Annealing

H. Matsunami, T. Kimoto, Y. Negoro, 2005 .