Xun Wang

发表

Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands

X. Liao, J. Zou, D. Cockayne, 2000 .

Photoluminescence from trapped excitons in quantum well structures

Xiaohan Liu, Zuimin Jiang, Xun Wang, 1996 .

Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100)

T. Yao, Ziqiang Zhu, Zuimin Jiang, 1998 .

Germanium dots with highly uniform size distribution grown on Si(100) substrate by molecular beam epitaxy

Xiaohan Liu, T. Yao, Ziqiang Zhu, 1997 .

DETECTION OF DEFECTS AT HOMOEPITAXIAL INTERFACE BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

Xun Wang, HengHui Sun, F. Lu, 1995 .

Study of strain and composition of the self-organized GE dots by grazing incident X-ray diffraction

Weirong Jiang, Q. Jia, Zuimin Jiang, 2001 .

Incorporation of High Concentration Luminescent Er Centers in Si and Porous Si by Electroplating

Xiaohan Liu, Xun Wang, Darning Huang, 1996 .

Role of codopant oxygen in erbium-doped silicon

Xun Wang, Y. Ling, Qiang-Sheng Sun, 1998 .

A deep level transient spectroscopic study of boron-ion-implanted single quantum wells

Xun Wang, HengHui Sun, F. Lu, 1997 .

Highly flat GexSi1−x/Si heterointerfaces grown by molecular beam epitaxy in two-dimensional growth mode

Xun Wang, Yu., C. Sheng, 1992 .

Temperature Dependence of Critical Thickness for Two Dimensional Growth of Ge x Si 1−x on Si Substrate

G. Zhou, Xun Wang, M. Yu, 1991 .

Near Band-Edge Photoluminescence in Strained and Relaxed Si1- xGe x/Si Quantum Wells

Xun Wang, Y. Yang, Z. Tian, 1998 .

Hole confinement in boron δ-doped Si quantum wells studied by admittance spectroscopy

Jiang Zhu, Bo Zhang, Xun Wang, 1995 .

Properties of interface states at Ta2O5/n-Si interfaces

Z. Fu, Xun Wang, F. Lu, 1998 .

High temperature nitridation structures of the Si(111)-(7×7) surface

Xun Wang, R. Lin, Hong-chuan Wang, 1987 .

Deep-level transient spectroscopic studies of ZnSe - GaAs heterointerfaces

Xun Wang, Jianpu Wang, HengHui Sun, 1997 .

Strain relaxation by alloying effects in Ge islands grown on Si(001)

Xun Wang, Jin Zou, Zuimin Jiang, 1999 .

Molecular beam epitaxy growth of Ge on Si(111) substrates covered by a SiO2 mask

Xun Wang, Yongliang Fan, Xiangjiu Zhang, 1995 .

Crystal structure and Raman scattering in Zn1−xMgxSe alloys

Xiaohan Liu, Donghong Wang, Xun Wang, 1995 .

Ge Beam Treatment of Si Substrate for Molecular Beam Epitaxy

Xun Wang, Yongliang Fan, X. Lu, 1993 .

Effects of rapid thermal annealing on electrical properties of heavily doped silicon molecular‐beam‐epitaxial layer with B2O3 doping source

Rong Liu, Xun Wang, Daming Huang, 1994 .

WELL DEPTH FLUCTUATION OF SI1-XGEX/SI QUANTUM WELL STRUCTURES STUDIED BY CONDUCTANCE-VOLTAGE TECHNIQUE

Zuimin Jiang, Xun Wang, F. Lu, 1998 .

X-ray reflectivity measurement of δ-doped erbium profile in silicon molecular-beam epitaxial layer

Zhijun Jiang, X. Jiang, Q. Jia, 1999 .

Oxygen δ-Doped Si Multi-Layers Grown by Molecular Beam Epitaxy

Xun Wang, Yongliang Fan, F. Lin, 1998 .

Growth and characterization of silicon molecular beam epilayers on GaP (111) substrates

Guoliang Zhou, Xun Wang, Ke Chen, 1987 .

Study of strain in partially relaxed Ge epilayers on Si(100) substrate

X. Jiang, Q. Jia, Zuimin Jiang, 1999 .

Boron-mediated growth of Ge quantum dots on Si(100) substrate

Yuesheng Li, Weirong Jiang, Zuimin Jiang, 2000 .

Investigation of atomic and electronic structures of InP polar surfaces

Xun Wang, 1988 .

Strong surface segregation of Sb atoms at low temperatures during Si molecular beam epitaxy

X. Jiang, L. Liao, Q. Jia, 1998 .

Co-evaporative Sb doping and crystalline quality in Si molecular beam epitaxy

Zuimin Jiang, Xun Wang, Haijun Zhu, 1996 .

Thermal stability of a Si/Si1−xGex quantum well studied by admittance spectroscopy

Xun Wang, F. Lu, F. Lin, 2000 .

Photoabsorption and photoresponse behaviors of Si1−xGexSi quantum wells

Xun Wang, D. Gong, Xingliang Huang, 1996 .

Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images

X. Liao, J. Zou, D. Cockayne, 2001 .

Observation of boron doping induced surface roughening in silicon molecular beam epitaxy

Zuimin Jiang, Xun Wang, Haijun Zhu, 1996 .

RHEED intensity oscillations of mbe grown Ge/Si ultra-thin multi-layered structures

G. Zhou, Xun Wang, K. Chen, 1990 .

Intensity Modulation of Glancing Angle X-Ray Diffraction Spectra of Ge x Si 1−x /Si Superlattices

G. Zhou, Xun Wang, M. Yu, 1991 .

COULOMB CHARGING EFFECT IN SELF-ASSEMBLED GE QUANTUM DOTS STUDIED BY ADMITTANCE SPECTROSCOPY

Xun Wang, H. J. Zhu, F. Lu, 1998 .

Coulomb charging effect of holes in Ge quantum dots studied by deep level transient spectroscopy

Zuimin Jiang, Xun Wang, F. Lu, 2000 .

Suppression of interfacial boron accumulation and defect density in molecular beam epitaxial silicon

Xun Wang, HengHui Sun, F. Lu, 1993 .

Surfactant influence on the Ge heteroepilayer on Si(0 0 1) studied by X-ray diffraction and atomic force microscopy

Xiaohan Liu, Jielin Sun, Zuimin Jiang, 1997 .

High efficient biexciton photoluminescence observed from single ZnCdSe quantum wells with continuous wave cold carrier generation

Xun Wang, Daming Huang, Xingjun Wang, 1999 .