T. Matsuura

M. Furusaka, T. Matsuura, K. Umegaki, 2019, Physica medica : PM : an international journal devoted to the applications of physics to medicine and biology : official journal of the Italian Association of Biomedical Physics.

Surface reaction of alternately supplied WF6 and SiH4 gases

T. Matsuura, J. Murota, Y. Yamamoto, 1998 .

A novel doping technology for ultra-shallow junction fabrication : boron diffusion from boron-adsorbed layer by rapid thermal annealing

Mitsumasa Koyanagi, Hiroyuki Kurino, Kazuhiro Hane, 2000 .

Effect of Si/Si1-yCy/Si Barriers on the Characteristics of Si1-xGex/Si Resonant Tunneling Structures

Chen Xuemei, M. Sakuraba, T. Matsuura, 2000 .

Atomic-layer etching of Ge using an ultraclean ECR plasma

T. Matsuura, J. Murota, T. Sugiyama, 1997 .

Single-Crystal Growth of Perovskite-Type La1-xSrxMO3 (M=Fe, Co) Solid Solutions

T. Matsuura, J. Mizusaki, S. Yamauchi, 1984 .

Super self-aligned technology of ultra-shallow junction in MOSFETs using selective Si1−xGex CVD

T. Tsuchiya, M. Sakuraba, T. Matsuura, 2002 .

Epitaxial growth of YBCO/MgO/YBCO structures

Saburo Tanaka, T. Matsuura, K. Higaki, 1991 .

Step-edge junction of YBCO thin films on MgO substrates

H. Kado, H. Kado, S. Tanaka, 1993, IEEE Transactions on Applied Superconductivity.

Jcderived from pinning potential on epitaxial Y1Ba2Cu3O7-Xthin film

T. Matsuura, H. Itozaki, 1992 .

Distinctive Thermoelectric Properties of Supersaturated Si-Ge-P Compounds: Achieving Figure of Merit ZT > 3.6

M. Kiyama, T. Takeuchi, Seongho Choi, 2019, 1909.12476.

Atomically controlled processing for group IV semiconductors

M. Sakuraba, T. Matsuura, J. Murota, 2002 .

Diffusion of As, P, and B from Doped Polysilicon through Thin SiO2 Films into Si Substrates

T. Matsuura, J. Murota, N. Mikoshiba, 1991 .

Low-Temperature Epitaxial Growth of IN-Situ HeavilY B-Doped Si 1-x Ge x , Films Using Ultraclean LPCVD

M. Sakuraba, T. Matsuura, J. Murota, 1998 .

Large figure of merit ZT = 1.88 at 873 K achieved with nanostructured Si0.55Ge0.35(P0.10Fe0.01)

M. Kiyama, T. Takeuchi, M. Matsunami, 2019, Applied Physics Express.

Discovery of colossal Seebeck effect in metallic Cu2Se

M. Kiyama, T. Takeuchi, Seongho Choi, 2019, Nature Communications.

Atomic-layer adsorption of P on Si(100) and Ge(100) by PH3 using an ultraclean low-pressure chemical vapor deposition

Y. Shimamune, M. Sakuraba, T. Matsuura, 2000 .

Atomic layer-by-layer epitaxy of silicon and germanium using flash heating in CVD

Y. Sawada, T. Watanabe, M. Sakuraba, 1995 .

Heavy Doping Characteristics of Si Films Epitaxially Grown at 450°C by Alternately Supplied PH3 and SiH4

Y. Shimamune, M. Sakuraba, T. Matsuura, 2003 .

Phosphorus Doping in Si1-x-yGexCy Epitaxial Growth by Low-Pressure Chemical Vapor Deposition Using a SiH4–GeH4–CH3SiH3–PH3–H2 Gas System

Doohwan Lee, Hyun-Sang Shim, M. Sakuraba, 2001 .

Atomic-layer doping in Si by alternately supplied PH3 and SiH4

Y. Shimamune, M. Sakuraba, T. Matsuura, 2000 .

Atomic‐Order Thermal Nitridation of Silicon at Low Temperatures

Takeshi Watanabe, M. Sakuraba, T. Matsuura, 1998 .

Atomic-order thermal nitridation of Si(100) and subsequent growth of Si

T. Watanabe, M. Sakuraba, T. Matsuura, 2001 .

Thermal nitridation of ultrathin SiO2 on Si by NH3

M. Sakuraba, T. Matsuura, J. Murota, 2002 .

Synthesis and characterisation of zinc oxide tetrapod nanocrystals

Paul A. Warburton, Takashi Matsuura, Steven Firth, 2006 .

Discovery of colossal Seebeck effect in metallic Cu2Se

M. Kiyama, T. Takeuchi, Seongho Choi, 2019, Nature Communications.

Anisotropic etching of n+ polycrystalline silicon with high selectivity using a chlorine and nitrogen plasma in an ultraclean electron cyclotron resonance etcher

Tadahiro Ohmi, Hiroaki Uetake, Nobuo Mikoshiba, 1990 .

Directional etching of Si with perfect selectivity to SiO2 using an ultraclean electron cyclotron resonance plasma

Tadahiro Ohmi, Hiroaki Uetake, Nobuo Mikoshiba, 1990 .

Perfect-Selectivity Directional Etching of Silicon Using Ultraclean ECR Plasma

Tadahiro Ohmi, Hiroaki Uetake, Nobuo Mikoshiba, 1989 .

Inversion from selective homoepitaxy of Si to selective Si film deposition on SiO2 using an ultraclean electron cyclotron resonance plasma

T. Ohmi, T. Matsuura, J. Murota, 1992 .

Contribution of ions and radicals in etching of Si1−xGex epitaxial films using an electron-cyclotron-resonance chlorine plasma

T. Matsuura, J. Murota, H. Takeuchi, 2000 .

Surface Termination of the Ge(100) and Si(100) Surfaces by Using DHF Solution Dipping

M. Sakuraba, T. Matsuura, J. Murota, 1998 .

CVD Si1-xGex epitaxial growth and its applications to MOS devices

Masao Sakuraba, Junichi Murota, Takashi Matsuura, 1999, Advanced Lithography.

Atomic-layer surface reaction of chlorine on Si and Ge assisted by an ultraclean ECR plasma

T. Matsuura, J. Murota, T. Sugiyama, 1998 .

Observation of sharp current peaks in resonant tunneling diode with strained Si0.6Ge0.4/Si(1 0 0) grown by low-temperature low-pressure CVD

P. Han, M. Sakuraba, T. Matsuura, 2000 .

Drain leakage current and instability of drain current in Si/Si1−xGex MOSFETs

T. Tsuchiya, M. Sakuraba, T. Matsuura, 2000 .

Thermal effects in atomic-order nitridation of Si by a nitrogen plasma

T. Matsuura, J. Murota, T. Seino, 2002 .

Atomic-order layer-by-layer role-share etching of silicon nitride using an electron cyclotron resonance plasma

T. Matsuura, J. Murota, Yasuhiko Honda, 1999 .

YBa2Cu3O7-x Thin Film Prepared by Laser Ablation

Saburo Tanaka, T. Matsuura, T. Nagaishi, 1991 .

Phosphorus Diffusion From Doped Si 1−x Ge x , Films into Silicon

M. Sakuraba, T. Matsuura, J. Murota, 1999 .

Confocal Microscope Alignment of Nanocrystals for Coherent Diffraction Imaging

R. Harder, I. Robinson, Moyu Watari, 2010 .

Fine gold grating fabrication on glass plate by imprint lithography

Yoshihiko Hirai, Takashi Matsuura, Tomohiro Kanakugi, 2003, SPIE Optics + Photonics.