S. Kobayashi

Effect of interconnect layer on Pb(Zr,Ti)O3 thin film capacitor degradation

H. Hada, S. Kobayashi, K. Amanuma, 1998, IEEE Electron Device Letters.

Integration technology for ferroelectric memory

H. Hada, T. Kunio, T. Tatsumi, 1999 .

Polarization reversal kinetics of a lead zirconate titanate thin-film capacitor for nonvolatile memory

H. Hada, T. Tatsumi, H. Koike, 2000 .

High tolerance operation of 1T/2C FeRAMs for the variation of cell capacitors characteristics

Hiroki Koike, Yoshihiro Hayashi, J. Yamada, 1998, 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).

Characteristics of 0.25 µm Ferroelectric Nonvolatile Memory with a Pb(Zr, Ti)O3 Capacitor on a Metal/Via-Stacked Plug

H. Hada, T. Kunio, T. Tatsumi, 2000 .

Scaling possibility of pzt capacitors for high density and low-voltage nvfram application

Y. Hayashi, T. Kunio, S. Kobayashi, 1997 .

Degradation mechanism of PZT caused by H2 annealing : Special issue on ferroelectric memory technology

H. Ono, S. Kobayashi, Nobuyuki Ikarashi, 1999 .