Y. Shiraishi

Selective-area metalorganic molecular beam epitaxy of GaAs using metalorganic chloride gallium precursors

A. Okamoto, Y. Shiraishi, N. Furuhata, 1997 .

Fabrication of Passive Thin Film Capacitor by Using Semiconductor Technology

T. Ohsumi, T. Osaka, Y. Shiraishi, 2005 .

Influence of metal/n‐InAs/interlayer/n‐GaAs structure on nonalloyed ohmic contact resistance

Akihiko Okamoto, Naoki Furuhata, A. Okamoto, 1994 .

Improvement in Electrical Properties at an n-GaAs/n-GaAs Regrown Interface Using Ammonium Sulfide Treatment

Y. Shiraishi, N. Furuhata, 1998 .

Effects of Ga ion irradiation on growth of GaN on SiN substrates by electron cyclotron resonance-assisted molecular beam epitaxy

Y. Akasaka, Y. Shiraishi, J. Yanagisawa, 2007 .