L. Kubler

发表

Selective thermal — as opposed to non-selective plasma — nitridation of SiGe related materials examined by in situ photoemission techniques

D. Aubel, M. Diani, L. Kubler, 1995 .

The influence of hydrogen during the growth of Ge films on Si(001) by solid source molecular beam epitaxy

L. Kubler, J. Bischoff, T. Angot, 1998 .

Surface structure of Si(001) treated by hydrogen and argon electron cyclotron resonance plasmas

M. Diani, L. Kubler, J. Bischoff, 1992 .

Substrate temperature-induced changeover from homogeneous to step nucleated growth modes for the initial thermal oxidation of Si(001) by O2

L. Kubler, J. Bischoff, D. Bolmont, 1990 .

6H- and 4H-SiC(0001) Si Surface Richness Dosing by Hydrogen Etching

D. Aubel, M. Diani, L. Kubler, 2003 .

X‐ray photoelectron spectroscopy observations of argon‐ion bombardment effects on phase separated structures such as SiNx alloys or Si/Si3N4 interfaces

R. Haug, L. Kubler, D. Bolmont, 1986 .

The effect of oxygen on the properties of evaporated amorphous silicon

L. Kubler, J. Koulmann, A. Jaéglé, 1979 .

An X-ray photoelectron spectroscopy study of the thermal oxidation and nitridation of Si(100)-2 × 1 by NO2

L. Kubler, J. Bischoff, D. Bolmont, 1993 .

EPR study on amorphous germanium oxygen, deposition angle, annealing, and substrate temperature effects

L. Kubler, J. Koulmann, G. Gewinner, 1976 .

ESR Investigation of Localized States in Amorphous Boron

L. Kubler, J. Koulmann, G. Gewinner, 1975 .

Paramagnetic centres in amorphous boron

L. Kubler, J. Koulmann, G. Gewinner, 1975 .

XPS, ESR and resistivity measurements on amorphous silicon oxynitride films (a-SiOxNy) prepared by reactive evaporation of Si in presence of NO2

R. Haug, L. Kubler, A. Jaéglé, 1983 .

X-ray photoelectron diffraction observation of β-SiC(001) obtained by electron cyclotron resonance plasma assisted growth on Si(001)

M. Diani, L. Kubler, J. Bischoff, 1993 .

Epitaxy relationships between Ge-islands and SiC(0 0 0 1)

M. Diani, L. Kubler, J. Bischoff, 2005 .

Ge epitaxial island growth on a graphitized C-rich 4H-SiC(0 0 0 1) surface

M. Diani, L. Kubler, J. Bischoff, 2005 .

6H-SiC{0001} X-ray photoelectron diffraction characterization used for polarity determination

L. Kubler, J. Bischoff, D. Dentel, 1998 .

Strong element dependence of C 1s and Si 2p X-ray photoelectron diffraction profiles for identical C and Si local geometries in β-SiC

L. Kubler, J. Bischoff, P. Wetzel, 1995 .

Surface scienceThe Ge Stranski-Krastanov growth mode on Si(001) (2 × 1) tested by X-ray photoelectron and Auger electron diffraction

D. Aubel, M. Diani, L. Kubler, 1993 .

Surface morphology evolution during Si capping of Ge islands grown on Si(001)-c(4×4)

L. Kubler, J. Bischoff, D. Dentel, 2004 .

Use of an electron cyclotron resonance plasma source for Si(001)2 × 1 surface nitridation by N2: an X-ray photoemission study

L. Kubler, J. Bischoff, D. Bolmont, 1992 .

Si-H bond production by NH3 adsorption on Si(111): An UPS study

L. Kubler, D. Bolmont, E. Hlil, 1987 .

Use of multilayer techniques for XPS identification of various nitrogen environments in the Si/NH3 system

L. Kubler, J. Bischoff, D. Bolmont, 1991 .

UPS differentiation between molecular NH3 and partially dissociated NH2 fragments adsorbed at low temperature on Si(001) surfaces

L. Kubler, J. Bischoff, D. Bolmont, 1991 .

Heterogeneous Si3N4 growth during SiNx film deposition and thermal nitridation of Si(100): An X-ray photoemission spectroscopy study

L. Kubler, J. Bischoff, D. Bolmont, 1990 .

Thermal nitridation of Si(100)-2 × 1 surface by NH3: XPS results

D. Bolmont, L. Kubler, J. Bischoff, 1989 .

Low temperature nitridation and hydrogenation of Si films with NH : a photoemission study

L. Kubler, J. Bischoff, D. Bolmont, 1987 .

Nitrogen bonding changes versus substrate temperature evidenced by X.P.S. in SiNxHy alloys prepared with NH3

R. Haug, L. Kubler, D. Bolmont, 1985 .

Evaporated a-Si films with low ESR defect density by hydrogenation under NH3 ambient

R. Haug, L. Kubler, J. Koulmann, 1983 .

Determination of interface state density of PtSi/strained-Si1-xGex/Si Schottky diodes

C. K. Maiti, Sanatan Chattopadhyay, L. K. Bera, 1998 .

Search for carbon nitride CNx compounds with a high nitrogen content by electron cyclotron resonance plasma deposition

D. Bolmont, A. Mansour, M. Diani, 1994 .

Original Ge-induced phenomena on various SiC(0 0 0 1) reconstructions

M. Diani, L. Kubler, J. Bischoff, 2007 .

Ge quantum dots on a large band gap semiconductor: the first growth stages on 4H–SiC(0 0 0 1)

L. Kubler, J. Bischoff, A. Barski, 2004 .

Experimental study of Si substitution by Ge in Ge-alloyed SiC epitaxial growth on 6H-SiC(0001)

D. Aubel, Laurent Simon, I. Matko, 2003 .

Ge growth mode modification on carbon-induced Si(001)-c(4×4) surfaces

D. Aubel, L. Kubler, J. Bischoff, 2000 .

A photoemission study of ammonia adsorption on Si(100)2 × 1 and Si(111)2 × 1 surfaces

J. Lacharme, L. Kubler, J. Bischoff, 1993 .

Role of hydrogen during Si capping of strained Ge or Si1−xGex hut clusters

L. Kubler, J. Bischoff, D. Bolmont, 1998 .

Si adatom surface migration biasing by elastic strain gradients during capping of Ge or Si1−xGex hut islands

J. Werckmann, L. Kubler, J. Bischoff, 1998 .

Surface smoothing induced by epitaxial Si capping of rough and strained Ge or Si1−xGex morphologies: a RHEED and TEM study

J. Werckmann, L. Kubler, J. Bischoff, 1998 .

Electron cyclotron resonance plasma ion beam effects on the formation of SiC on Si(001) characterized by in-situ photoemission

D. Aubel, M. Diani, L. Kubler, 1994 .

Reflection high-energy electron diffraction intensity oscillations during Si growth on Ge(001) by solid source/molecular beam epitaxy

L. Kubler, J. Bischoff, D. Bolmont, 1998 .

AFM and RHEED study of Ge/Si(001) quantum dot modification by Si capping

C. Pirri, L. Kubler, J. Bischoff, 2000 .

A C 1s core level x-ray photoelectron diffraction characterization of substitutional carbon in epitaxial Si1−yCy alloys grown on Si(111) and Si(001)

D. Aubel, L. Kubler, J. Bischoff, 1997 .

Third-nearest-neighbor carbon pairs in epitaxial Si 1-y C y alloys: Local order for carbon in silicon characterized by x-ray photoelectron diffraction and Raman spectroscopy

J. Groenen, L. Kubler, L. Simon, 1997 .

Stress driven spontaneous mesoscopic alloy decomposition and ordering along step bunches during epitaxial Si1-yCy alloy growth on Si

J. Faure, L. Kubler, L. Simon, 1997 .

MBE Si regrowth on carbon-induced Si(001)-c(4×4) reconstructions studied by RHEED

D. Aubel, L. Kubler, J. Bischoff, 2000 .

The Ge Stranski-Krastanov growth mode on Si(01)(2 x 1) tested by X-ray photoelectron and Auger electron diffraction

D. Aubel, M. Diani, L. Kubler, 1993 .

Ge LATERAL SEGREGATION AS A DOMINANT ALLOYING MECHANISM DURING LOW KINETIC Si CAPPING OF STRAINED Si1-xGex HUT ISLANDS

J. Werckmann, L. Kubler, J. Bischoff, 1999 .

Atomic structure of carbon-induced Si(001)c(4x4) reconstruction as a Si-Si homodimer and C-Si heterodimer network

D. Aubel, R. Car, A. Selloni, 2001 .

Substrate manipulation by insertion of a thin and strained 2D layer: effect on Ge/Si growth

D. Aubel, C. Pirri, L. Kubler, 2003 .

X-ray photoelectron diffraction investigation of Ge segregation and film morphology during first stage heteroepitaxy of Si on Ge(001)

D. Aubel, L. Kubler, J. Bischoff, 1996 .

Strain-induced morphology manipulations of Si and Ge-based heterostructures on Si(0 0 1) surfaces

L. Kubler, J. Bischoff, D. Bolmont, 2004 .

Si1- yCy surface alloys used as self-patterned templates for the growth of Ge dots

D. Aubel, L. Kubler, L. Simon, 2006 .

Influence of a pre-deposited carbon submonolayer on the Ge island nucleation on Si(001)

Mathieu Stoffel, L. Kubler, J. Bischoff, 2003 .

X-ray photoelectron characterization of 6H-SiC(0001)

Laurent Simon, L. Kubler, J. Bischoff, 1999 .

Influence of silicon X-ray photoelectron diffraction on quantitative surface analysis

L. Kubler, J. Bischoff, D. Bolmont, 1991 .

Ge segregation tested by X-ray photoelectron diffraction and surface atom titration during the first stage of Si heteroepitaxy on Ge(001)2 × 1

D. Aubel, L. Kubler, J. Bischoff, 1996 .

In-situ surface technique analyses and ex-situ characterization of Si1-xGex epilayers grown on Si(001)-2 ×1 by molecular beam epitaxy

D. Aubel, B. Fraisse, L. Kubler, 1994 .

A structural parallel between Ge- and Si-induced 4 × 4 and 3 × 3 reconstructions on SiC(0 0 0 1) drawn from comparative RHEED oscillations

L. Kubler, J. Bischoff, L. Simon, 2004 .

Carbon-associated Si(001)-c(4×4) reconstruction dosed with hydrogen

D. Aubel, L. Kubler, J. Bischoff, 2000 .

Room‐temperature Si3N4 and Ge3N4 growths by Si and Ge surface irradiation with a N2 electron cyclotron resonance plasma: An x‐ray photoemission study

L. Kubler, J. Bischoff, D. Bolmont, 1991 .

Energetics of surface and subsurface carbon incorporation in Si(100)

R. Car, A. Selloni, P. Sonnet, 2000 .

A particular epitaxial Si1 − yCy alloy growth mode on Si(001) evidenced by cross-sectional transmission electron microscopy

D. Aubel, A. Claverie, J. Faure, 1995 .

Synthesis of epitaxial Si1−yCy alloys on Si(001) with high level of non-usual substitutional carbon incorporation

J. Grob, L. Kubler, J. Bischoff, 1995 .

An experimental characterization of Si(111) surfaces by Si 2p X-ray photoelectron diffraction

M. Diani, L. Kubler, J. Bischoff, 1992 .

Low temperature NH3 adsorption on clean amorphous silicon and on crystalline silicon surfaces and nitrogen bonding in hydrogenated amorphous silicon nitride films: A comparative X-ray photoelectron spectroscopy study

L. Kubler, D. Bolmont, J. Peruchetti, 1987 .

X-ray spectroscopy of the oxidation of 6H-SiC(0001)

L. Kubler, T. Billon, A. Ermolieff, 1999 .

Oxidation of 6H-SiC(0001)

L. Kubler, T. Billon, A. Ermolieff, 1999 .

Observation of Si out-diffusion related defects in SiC growth on Si(001)

D. Aubel, A. Claverie, M. Diani, 1995 .

Molecular beam epitaxial growth of strained layers on graded for Pt silicide Schottky diodes

C. Maiti, S. Chattopadhyay, L. Bera, 1998 .

Strict thermal nitridation selectivity between Si and Ge used as a chemical probe of the outermost layer of Si1−xGex alloys and Ge/Si(001) or Si/Ge(001) heterostructures

D. Aubel, M. Diani, L. Kubler, 1994 .

EPR investigation of paramagnetic centres in β-rhombohedral boron

L. Kubler, J. Koulmann, G. Gewinner, 1973 .

Magnetic susceptibility of pure boron

L. Kubler, J. Koulmann, G. Gewtnner, 1973 .