D. Bolmont

发表

Selective thermal — as opposed to non-selective plasma — nitridation of SiGe related materials examined by in situ photoemission techniques

D. Aubel, M. Diani, L. Kubler, 1995 .

Surface structure of Si(001) treated by hydrogen and argon electron cyclotron resonance plasmas

M. Diani, L. Kubler, J. Bischoff, 1992 .

Substrate temperature-induced changeover from homogeneous to step nucleated growth modes for the initial thermal oxidation of Si(001) by O2

L. Kubler, J. Bischoff, D. Bolmont, 1990 .

6H- and 4H-SiC(0001) Si Surface Richness Dosing by Hydrogen Etching

D. Aubel, M. Diani, L. Kubler, 2003 .

Accurate measurement of the in-plane magnetic anisotropy energy function Ea(θ) in ultrathin films by magneto-optics

J. Bubendorff, C. Pirri, D. Bolmont, 2006 .

Abrupt versus diffuse nature of the Cr/Ag and Cr/Au interfaces

C. Pirri, D. Bolmont, M. Hanf, 1988 .

A SPECTROSCOPIC STUDY OF FLUORINE DIFFUSION IN Y-Ba-Cu MULTILAYERS

P. Danesi, D. Bolmont, A. Mehdaoui, 1992 .

X‐ray photoelectron spectroscopy observations of argon‐ion bombardment effects on phase separated structures such as SiNx alloys or Si/Si3N4 interfaces

R. Haug, L. Kubler, D. Bolmont, 1986 .

Evidence of hole-electron quasiparticle interference in ErSi2 semimetal by Fourier-transform scanning tunneling spectroscopy.

D. Aubel, D. Bolmont, L. Simon, 2005, Physical review letters.

Fermi contour imaging of the two-dimensional semimetal ErSi 2 by Fourier transform STM

D. Aubel, C. Pirri, D. Bolmont, 2004 .

Photoemission study of low pressure hydrogen and disilane adsorption on Si(111) 7 × 7 and Ge(111)

D. Bolmont, J. Koulmann, M. Alaoui, 1990 .

An X-ray photoelectron spectroscopy study of the thermal oxidation and nitridation of Si(100)-2 × 1 by NO2

L. Kubler, J. Bischoff, D. Bolmont, 1993 .

X-ray photoelectron diffraction observation of β-SiC(001) obtained by electron cyclotron resonance plasma assisted growth on Si(001)

M. Diani, L. Kubler, J. Bischoff, 1993 .

Epitaxy relationships between Ge-islands and SiC(0 0 0 1)

M. Diani, L. Kubler, J. Bischoff, 2005 .

Room temperature adsorption of Au on cleaved GaAs (110)

D. Bolmont, C. Sébenne, P. Chen, 1985 .

Room-temperature formation of the Ag/GaAs (110) interface

Ping Chen, D. Bolmont, C. Sébenne, 1982 .

Electronic properties of Ga/GaAs(110) upon interface formation

D. Bolmont, C. Sébenne, P. Chen, 1982 .

Surface scienceThe Ge Stranski-Krastanov growth mode on Si(001) (2 × 1) tested by X-ray photoelectron and Auger electron diffraction

D. Aubel, M. Diani, L. Kubler, 1993 .

Electronic structure of epitaxial erbium silicide films on Si(111)

D. Bolmont, C. Pirri, P. Wetzel, 1991 .

Growth of ultrathin epitaxial FexCo1−x alloy films on Si(0 0 1): stabilization of metastable bcc Co

V. Pierron-Bohnes, D. Bolmont, P. Wetzel, 2002 .

Medium energy electron diffraction and X-ray photoelectron diffraction study of pseudomorphic Fe silicides grown on Si(111). Evidence of Fe vacancy formation

S. Hong, D. Bolmont, C. Pirri, 1995 .

Thermal evolution of the Er/Si(111) interface: bulk and surface electronic states

C. Pirri, P. Paki, D. Bolmont, 1992 .

Use of an electron cyclotron resonance plasma source for Si(001)2 × 1 surface nitridation by N2: an X-ray photoemission study

L. Kubler, J. Bischoff, D. Bolmont, 1992 .

X-ray photoelectron diffraction from ultra-thin Cr layers on Au(100) and Ag(100): a comparison

D. Bolmont, M. Hanf, G. Gewinner, 1993 .

Adsorption of Al on cleaved Si (111) at room temperature

Ping Chen, D. Bolmont, C. Sébenne, 1984 .

Reactive laser deposition of high quality YBaCuO and ErBaCuO films

A. Luches, A. Vecchio, D. Bolmont, 1996 .

Low field frequency dependent complex susceptibility of YBa2Cu3Ox

D. Bolmont, G. Nansé, A. Mehdaoui, 1988 .

Crystallographic and electronic structure of Cu/Cr/Cu(001) sandwiches

D. Bolmont, P. Schieffer, M. Hanf, 1996 .

Epitaxy of thin Cr layers on Cu(001)

D. Bolmont, M. Hanf, G. Gewinner, 1994 .

Initial stages of growth of Mn on Ag(100) studied by X-ray photoelectron diffraction and valence band photoemission

D. Bolmont, P. Schieffer, M. Hanf, 1996 .

Initial growth and structure of Mn on Ag(100): Formation of a superficial alloy

D. Bolmont, P. Schieffer, M. Hanf, 1996 .

Si-H bond production by NH3 adsorption on Si(111): An UPS study

L. Kubler, D. Bolmont, E. Hlil, 1987 .

Molecular beam epitaxy of monotype CrSi2 on Si(111)

C. Pirri, D. Bolmont, P. Wetzel, 1989 .

Epitaxial growth of CrSi and CrSi2 on Si(1 1 1)

C. Pirri, D. Bolmont, P. Wetzel, 1988 .

Annealing studies of the Co/Si(1 1 1) interface

C. Pirri, D. Bolmont, G. Gewinner, 1986 .

Use of multilayer techniques for XPS identification of various nitrogen environments in the Si/NH3 system

L. Kubler, J. Bischoff, D. Bolmont, 1991 .

UPS differentiation between molecular NH3 and partially dissociated NH2 fragments adsorbed at low temperature on Si(001) surfaces

L. Kubler, J. Bischoff, D. Bolmont, 1991 .

Heterogeneous Si3N4 growth during SiNx film deposition and thermal nitridation of Si(100): An X-ray photoemission spectroscopy study

L. Kubler, J. Bischoff, D. Bolmont, 1990 .

Photoemission study of low pressure silane adsorption on Si(111)7 × 7

D. Bolmont, D. Muller, J. Koulmann, 1989 .

Thermal nitridation of Si(100)-2 × 1 surface by NH3: XPS results

D. Bolmont, L. Kubler, J. Bischoff, 1989 .

Low temperature nitridation and hydrogenation of Si films with NH : a photoemission study

L. Kubler, J. Bischoff, D. Bolmont, 1987 .

Nitrogen bonding changes versus substrate temperature evidenced by X.P.S. in SiNxHy alloys prepared with NH3

R. Haug, L. Kubler, D. Bolmont, 1985 .

oxidation of TaSi2 thin films on polycrystalline tantalum

D. Bolmont, J. Koulmann, M. Alaoui, 1992 .

Magnetic characterization of superconductors in the low a.c. field limit

D. Bolmont, A. Mehdaoui, B. Loegel, 1993 .

The influence of thermal treatments, fabrication methods and shapes on the magnetic transition of high temperature superconducting compounds

D. Bolmont, A. Mehdaoui, B. Loegel, 1991 .

Utility of the χac Response in the Low Field Limit for Characterizing Inhomogeneous Superconductors

D. Bolmont, A. Mehdaoui, B. Loegel, 1991 .

Critical dynamic field in YBaCuO and BiSrCaCuO compounds: a comparative study of some high temperature superconductors by low field complex susceptibility

D. Bolmont, A. Mehdaoui, B. Loegel, 1990 .

Interfacial reaction between monosilane and a polycrystalline tantalum substrate

D. Bolmont, D. Muller, J. Koulmann, 1989 .

CrSi2 formation and reduction of Cr2O3, during annealing of an oxidized Cr overlayer on Si(111)

D. Bolmont, C. Pirri, P. Wetzel, 1986 .

Epitaxy of CoSi2 on Si (111) at low temperature (≤400 °C)

C. Pirri, D. Bolmont, P. Wetzel, 1988 .

Identification of three distinct CoSi2(111)(1×1) surface structures

D. Bolmont, C. Pirri, P. Wetzel, 1990 .

Formation of Epitaxial CoSi2 Films on Si(111) a Low Temperature (≤400°C)

D. Bolmont, C. Pirri, P. Wetzel, 1989 .

Room-temperature formation and oxidation properties of the Cr/Si(111) interface

D. Bolmont, C. Pirri, P. Wetzel, 1987 .

Photoemission investigation of bulk-grown versus epitaxial thin film CoSi2(111) surfaces

C. Pirri, D. Bolmont, P. Wetzel, 1992 .

Characterisation by photoemission of the surface structure of epitaxial CoSi2 grown on Si(111) by various preparation techniques

D. Bolmont, C. Pirri, P. Wetzel, 1989 .

Quantum well states in a metal-semiconductor system: CoSi2/Si(111)

C. Pirri, D. Bolmont, P. Wetzel, 1990 .

Formation of Epitaxial CsCl-Type Iron Silicide on Si(111)

D. Bolmont, C. Pirri, P. Wetzel, 1993 .

Epitaxial growth of CoSi2 on Si(100)

C. Pirri, D. Bolmont, P. Wetzel, 1990 .

Vacancy-induced electronic states in ErSi1.7(0001)

C. Pirri, L. Stauffer, D. Bolmont, 1997 .

STM investigation of 2- and 3-dimensional Er disilicide grown epitaxially on Si(111)

C. Pirri, D. Bolmont, J. Labrune, 1996 .

Epitaxial Er silicide formation on Si(111) in the monolayer range

C. Pirri, D. Bolmont, P. Wetzel, 1993 .

Metastable film growth of Cr on Cu(OO1)

D. Bolmont, M. Hanf, G. Gewinner, 1995 .

Evidence for two oxygen chemisorption sites on the Cr(100) surface at room temperature

D. Bolmont, C. Pirri, G. Gewinner, 1986 .

Dynamical critical fields, aging effects, and restoring in some YBa2Cu3Ox compounds studied by complex susceptibility measurements

D. Bolmont, A. Mehdaoui, B. Loegel, 1989 .

Characterization of bulk superconducting high-temperature ceramics by very low field a.c. initial susceptibility

D. Bolmont, A. Mehdaoui, B. Loegel, 1989 .

AC susceptibility of HTSC in the low field limit

D. Bolmont, A. Mehdaoui, D. Berling, 1996 .

HOMOGENEITY OF HIGH AND LOW TEMPERATURE SUPERCONDUCTING COMPOUNDS IN RELATION WITH MAGNETIC CHARACTERIZATION

D. Bolmont, A. Mehdaoui, B. Loegel, 1991 .

Characterization of high temperature superconducting compounds by very low field ac susceptibility: The critical dynamic, field as a universal quality factor

P. Wachter, G. Collin, D. Bolmont, 1990 .

Irreversibility line and anisotropy of magnetic melt textured Y1Ba2Cu3O7−δ studied by AC susceptibility

D. Bourgault, R. Tournier, P. Danesi, 1993 .

Irreversibility and critical lines in textured high temperature superconductors : effects of processing on the magnetic phase diagram

D. Bourgault, P. Danesi, D. Bolmont, 1993 .

Influence of processing on the low-field magnetic phase diagram of high-temperature superconductors

D. Bourgault, P. Danesi, D. Bolmont, 1993 .

Search for carbon nitride CNx compounds with a high nitrogen content by electron cyclotron resonance plasma deposition

D. Bolmont, A. Mansour, M. Diani, 1994 .

Formation of epitaxial Fe3−xSi1+x (0≤x≤1) silicides on Si(111)

C. Pirri, S. Hong, D. Bolmont, 1995 .

Existence and thermal stability of mono and dihydride phases on Si(1 1 1) and Ge(1 1 1) surfaces: A photoemission study

D. Bolmont, D. Steinmetz, J. Koulmann, 1991 .

Monohydride phase on Ge(111) and amorphous germanium surfaces: a photoemission study

D. Bolmont, D. Steinmetz, J. Koulmann, 1990 .

Crystallographic and electronic structure of ultra thin Ag/Cr/Ag(100) sandwiches

D. Bolmont, M. Hanf, G. Gewinner, 1992 .

Photoemission study of ultra-thin Cr layers on Ag(100)

D. Bolmont, M. Hanf, G. Gewinner, 1992 .

Flux pinning and dynamical critical fields in some YBaCuO compounds

D. Bolmont, A. Mehdaoui, B. Loegel, 1989 .

Surface states from photoemission threshold measurements on a clean, cleaved, Si (111) surface

M. Balkanski, D. Bolmont, C. Sébenne, 1975 .

Chemisorption of atomic hydrogen on the Si(111)7 × 7 reconstructed surface at low coverage

L. Stauffer, C. Minot, H. Ezzehar, 1995 .

First stages of Ge adsorption on the Si(111)7 × 7 surface: experimental and theoretical studies

L. Stauffer, C. Minot, D. Bolmont, 1994 .

Non-equivalence of the adatoms in the das model of the Si(111) 7x7 surface, an extended Hückel model calculation

L. Stauffer, C. Minot, D. Bolmont, 1993 .

Frequency shift of the SiH vibrational modes on erbium silicide measured by HREELS

D. Bolmont, T. Angot, J. Koulmann, 1996 .

High resolution electron energy loss spectroscopy study of the Si(001) 3 × 1 hydrogenated surface

D. Bolmont, T. Angot, J. Koulmann, 1996 .

Reversible process of hydrogen adsorption on Si(111)

D. Bolmont, D. Muller, F. Ringeisen, 1987 .

Pairing mechanism in interaction of atomic hydrogen with epitaxial erbium silicide

D. Bolmont, T. Angot, P. Louis, 1999 .

Room temperature adsorption and growth of Ga and In on cleaved Si(111)

D. Bolmont, C. Sébenne, P. Chen, 1984 .

Structure and electronic properties of cleaved Si(111) upon Ge adsorption

Ping Chen, D. Bolmont, C. Sébenne, 1982 .

A photoemission study of ammonia adsorption on Si(100)2 × 1 and Si(111)2 × 1 surfaces

J. Lacharme, L. Kubler, J. Bischoff, 1993 .

Hydrogenation of amorphized silicon by low energy H+ ion bombardment studied by UPS

D. Bolmont, D. Muller, J. Koulmann, 1989 .

Role of hydrogen during Si capping of strained Ge or Si1−xGex hut clusters

L. Kubler, J. Bischoff, D. Bolmont, 1998 .

Condensation of disilane or germane on a metallic surface: a photoemission study

D. Bolmont, D. Steinmetz, J. Koulmann, 1992 .

Adsorption de disilane sur Si(111) 7 × 7. Influence de l'hydrogène

D. Bolmont, J. Koulmann, M. Alaoui, 1990 .

Room temperature disilane adsorption on Si(111) and Ge(111) studied by UPS: a comparative study

D. Bolmont, J. Koulmann, M. Alaoui, 1990 .

p(1×1) to c(4×8) periodicity change in ultrathin iron silicide on Si(111)

C. Pirri, D. Bolmont, G. Garreau, 2003 .

Growth of an ordered Cr monolayer on Ag(100): evidence of two-dimensional antiferromagnetism

D. Bolmont, M. Hanf, G. Gewinner, 1991 .

Photoemission investigation of the initial growth mode of Cr on Ag(100)

C. Pirri, D. Bolmont, M. Hanf, 1990 .

Stabilization of a face-centered-cubic Mn structure with the Ag lattice parameter

D. Bolmont, P. Schieffer, M. Hanf, 1997 .

Ag segregation and epitaxial Cr growth on Ag(100)

D. Bolmont, M. Hanf, G. Gewinner, 1992 .

Electron cyclotron resonance plasma ion beam effects on the formation of SiC on Si(001) characterized by in-situ photoemission

D. Aubel, M. Diani, L. Kubler, 1994 .

Effect of Cu deposition on structural and electronic properties of cleaved Si(111) surfaces

D. Bolmont, A. Taleb-Ibrahimi, C. Sébenne, 1985 .

Electronic properties of cleaved Si(111) upon room-temperature deposition of Au

D. Bolmont, A. Taleb-Ibrahimi, C. Sébenne, 1984 .

Structural and electronic properties of cleaved Si(111) upon room-temperature formation of an interface with Ag

D. Bolmont, C. Sébenne, Ping-Zen Chen, 1981 .

Investigation of the Cu/GaAs(110) interface formation

H. Lüth, D. Bolmont, C. Sébenne, 1983 .

Effect of surface reconstruction on the adsorption of Ge on clean Si(111)

Ping Chen, D. Bolmont, C. Sébenne, 1983 .

Structure of clean and H-saturated epitaxial two-dimensional Er silicide on Si(111) studied by SEXAFS

C. Pirri, D. Bolmont, P. Wetzel, 2004 .

Observation of a temporal evolution of defected epitaxial erbium silicide layers at room temperature

C. Pirri, D. Bolmont, P. Wetzel, 1996 .

Initial growth mode of Er silicide on Si(111) by solid phase epitaxy

C. Pirri, D. Bolmont, J. Labrune, 1996 .

Formation of epitaxial CoSix silicide at the CoCoSi2(111) interface studied by photoemission and band structure calculations

P. Sonnet, L. Stauffer, S. Hong, 1996 .

Interaction of H with epitaxial Er silicide layers on Si(111) : adsorption versus absorption

C. Pirri, D. Bolmont, P. Wetzel, 1996 .

Surface atomic structure and symmetry properties of ErSi1.7 on Si(111)

C. Pirri, L. Stauffer, D. Bolmont, 1996 .

Surface electronic structure of epitaxial √3 × √3R30° Er silicide on Si(111)

C. Pirri, D. Bolmont, P. Wetzel, 1995 .

Hydrogen adsorption on erbium silicide surface

C. Pirri, D. Bolmont, P. Wetzel, 1995 .

Reflection high-energy electron diffraction intensity oscillations during Si growth on Ge(001) by solid source/molecular beam epitaxy

L. Kubler, J. Bischoff, D. Bolmont, 1998 .

AFM and RHEED study of Ge/Si(001) quantum dot modification by Si capping

C. Pirri, L. Kubler, J. Bischoff, 2000 .

The Ge Stranski-Krastanov growth mode on Si(01)(2 x 1) tested by X-ray photoelectron and Auger electron diffraction

D. Aubel, M. Diani, L. Kubler, 1993 .

Experimental band structure and Fermi surface of a two-dimensional Er silicide on Si(111)

C. Pirri, P. Paki, D. Bolmont, 1992 .

Symmetry properties of the ErSi1.7valence band states

C. Pirri, D. Bolmont, P. Wetzel, 1995 .

Characterization of two-dimensional Er-silicide / Si (111) interface

C. Pirri, D. Bolmont, P. Wetzel, 1994 .

The ordered overlayer growth of germanium on Si(111) (7×7)

Ping Chen, D. Bolmont, C. Sébenne, 1984 .

Substrate manipulation by insertion of a thin and strained 2D layer: effect on Ge/Si growth

D. Aubel, C. Pirri, L. Kubler, 2003 .

X-ray photoelectron diffraction investigation of Ge segregation and film morphology during first stage heteroepitaxy of Si on Ge(001)

D. Aubel, L. Kubler, J. Bischoff, 1996 .

Strain-induced morphology manipulations of Si and Ge-based heterostructures on Si(0 0 1) surfaces

L. Kubler, J. Bischoff, D. Bolmont, 2004 .

Preparation and electronic properties of abrupt Ge-GaAs(110) interfaces

Ping Chen, D. Bolmont, C. Sébenne, 1982 .

Electronic properties of the annealed interface between Ag and 7 × 7 Si(111)

Ping Chen, D. Bolmont, C. Sébenne, 1981 .

Influence of silicon X-ray photoelectron diffraction on quantitative surface analysis

L. Kubler, J. Bischoff, D. Bolmont, 1991 .

Growth of epitaxial SiGe nanostructures at low temperature on Si(100) using hot-wire assisted gas source molecular beam epitaxy

J. Werckmann, D. Bolmont, T. Angot, 1997 .

Ge segregation tested by X-ray photoelectron diffraction and surface atom titration during the first stage of Si heteroepitaxy on Ge(001)2 × 1

D. Aubel, L. Kubler, J. Bischoff, 1996 .

In-situ surface technique analyses and ex-situ characterization of Si1-xGex epilayers grown on Si(001)-2 ×1 by molecular beam epitaxy

D. Aubel, B. Fraisse, L. Kubler, 1994 .

Interaction of GeH4 with the Ge(100)2 × 1 surface

D. Bolmont, D. Steinmetz, J. Koulmann, 1995 .

Room‐temperature Si3N4 and Ge3N4 growths by Si and Ge surface irradiation with a N2 electron cyclotron resonance plasma: An x‐ray photoemission study

L. Kubler, J. Bischoff, D. Bolmont, 1991 .

Growth of epitaxial Si1−xGex layers on Si(001) surface, by catalytical decomposition of disilane and germane: Photoemission studies

D. Bolmont, T. Angot, J. Koulmann, 1995 .

An experimental characterization of Si(111) surfaces by Si 2p X-ray photoelectron diffraction

M. Diani, L. Kubler, J. Bischoff, 1992 .

Using decomposed disilane as a gas source for Si epitaxial growth on Ge (111): Photoemission studies

D. Bolmont, D. Steinmetz, J. Koulmann, 1990 .

Low temperature NH3 adsorption on clean amorphous silicon and on crystalline silicon surfaces and nitrogen bonding in hydrogenated amorphous silicon nitride films: A comparative X-ray photoelectron spectroscopy study

L. Kubler, D. Bolmont, J. Peruchetti, 1987 .

In-plane uniaxial magnetic anisotropy of thin Fe layers on Si(1 1 1) induced upon grazing deposition of a Si capping layer

J. Bubendorff, C. Pirri, D. Bolmont, 2005 .

Sixth-order contribution to the cubic anisotropy in Fe(1 1 1) thin films on Si(1 1 1)

D. Bolmont, R. Stephan, P. Wetzel, 2004 .

Strict thermal nitridation selectivity between Si and Ge used as a chemical probe of the outermost layer of Si1−xGex alloys and Ge/Si(001) or Si/Ge(001) heterostructures

D. Aubel, M. Diani, L. Kubler, 1994 .

Comparative photoemission study of low pressure hydrogen, silane and disilane adsorption on amorphized silicon

D. Bolmont, J. Koulmann, M. Alaoui, 1991 .