A. Noori

发表

Metalorganic vapor-phase epitaxy of III/V phosphides with tertiarybutylphosphine and tertiarybutylarsine

R. Hicks, M. Goorsky, R. Odedra, 2004 .

Integration of 20nm half pitch single damascene copper trenches by spacer-defined double patterning (SDDP) on metal hard mask (MHM)

G. Beyer, E. Sleeckx, H. Dekkers, 2010, 2010 IEEE International Interconnect Technology Conference.

InAs∕AlSb high-electron-mobility transistors by molecular-beam epitaxy for low-power applications

J. B. Boos, B. R. Bennett, W. Deal, 2006 .

Ultra-low-power HEMT and HBT devices and circuit demonstrations

W. Deal, M. Goorsky, M. Lange, 2005, 2005 International Semiconductor Device Research Symposium.

Enabling thermal IL and ALD HfOx integration for sub-20nm gate stack

S. Datta, T. Sato, A. Brand, 2013, 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

The effect of La2O3-incorporation in HfO2 dielectrics on Ge substrate by atomic layer deposition

Min Kyu Kim, David Thompson, I. Oh, 2013 .

Significant Enhancement of the Dielectric Constant through the Doping of CeO2 into HfO2 by Atomic Layer Deposition

Min Kyu Kim, David Thompson, I. Oh, 2014 .

Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition

Min Kyu Kim, David Thompson, Hyungjun Kim, 2011 .

Threshold voltage tuning by metal gate work function modulation for 10 nm CMOS integration and beyond

A. Brand, S. Hassan, Xinliang Lu, 2014, International Symposium on VLSI Technology, Systems, and Applications.

Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-k Last Replacement Metal Gate Technology

S. Chew, T. Schram, K. Devriendt, 2013 .

X-ray scattering techniques for the measurement of InP substrates

M. Goorsky, A. Noori, S. Hayashi, 2004, 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..

Materials Issues for the Heterogeneous Integration of III-V Compounds Exfoliation and Layer Transfer

Mark S. Goorsky, M. Goorsky, A. Noori, 2006 .

Metalorganic chemical vapor deposition of InGaAsN using dilute nitrogen trifluoride

R. Hicks, M. Goorsky, G. Malouf, 2007 .

HKMG process impact on N, P BTI: Role of thermal IL scaling, IL/HK integration and post HK nitridation

A. Brand, S. Mahapatra, S. Datta, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

Manufacturable Processes for $\leq$ 32-nm-node CMOS Enhancement by Synchronous Optimization of Strain-Engineered Channel and External Parasitic Resistances

Wen-Chin Lee, S. Demuynck, Jianxin Lei, 2008, IEEE Transactions on Electron Devices.

Surface roughness and dislocation distribution in compositionally graded relaxed SiGe buffer layer with inserted-strained Si layers

T. Yoon, Yahong Xie, Jian Liu, 2005 .

Metamorphic 6.0 /spl Aring/ narrow band gap HBT technology on InP substrates

M. Goorsky, A. Noori, S. Hayashi, 2006, 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings.

Development of 6.00Å graded metamorphic buffer layers and high performance In0.86Al0.14As∕In0.86Ga0.14As heterojunction bipolar transistor devices

M. Goorsky, A. Noori, S. Hayashi, 2006 .

Scaled Gate Stacks for Sub-20-nm CMOS Logic Applications Through Integration of Thermal IL and ALD HfOx

A. Brand, S. Mahapatra, S. Datta, 2013, IEEE Electron Device Letters.