A. Khatibzadeh

发表

The collapse of current gain in multi-finger heterojunction bipolar transistors: its substrate temperature dependence, instability criteria, and modeling

Wen-Chau Liu, A. Khatibzadeh, W. Liu, 1994 .

Current gain collapse in microwave multifinger heterojunction bipolar transistors operated at very high power densities

S. Nelson, D. G. Hill, Wen-Chau Liu, 1993 .

Tradeoff between 1/f noise and microwave performance in AlGaAs/GaAs heterojunction bipolar transistors

M. Tutt, D. Costa, D. Pavlidis, 1994 .

1.5-W CW S-band GaInP/GaAs/GaInP double heterojunction bipolar transistor

E. Beam, A. Khatibzadeh, W. Liu, 1994, IEEE Electron Device Letters.

High linearity power X-band GaInP/GaAs heterojunction bipolar transistor

W. Liu, P. Ikalainen, Tae Kim, 1994, IEEE Electron Device Letters.

Characterization of bias-stressed carbon-doped GaAs/AlGaAs power heterojunction bipolar transistors

D. Costa, A. Khatibzadeh, T. Henderson, 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

RECENT DEVELOPMENTS IN GalnP/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS

E. Beam, T. Kim, A. Khatibzadeh, 1996 .

Novel HBT with reduced thermal impedance

P. Ikalainen, T. Kim, A. Khatibzadeh, 1995 .

The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction bipolar transistors

W. Liu, J. Sweder, A. Khatibzadeh, 1996 .

RECENT DEVELOPMENTS IN GaInP/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS

E. Beam, A. Khatibzadeh, W. Liu, 1994 .