C. Werner

发表

Modeling of Chemical Vapor Deposition of Tungsten Films

C. Kleijn, C. Werner, 1993 .

Iiuproveinent of Thermal Uniforini ty of RTP-CVD Equipment by Application of Siiiiulatioii

A. Kersch, C. Werner, H. Schafer, 1991 .

Equipment Simulation of Selective Tungsten Deposition

C. Werner, J. I. Ulacia, C. Hopfmann, 1992 .

Corrosion behaviour of ionic liquids

Christoph Werner, Marc Uerdingen, C. Werner, 2005 .

Modeling of SiGe deposition using quantum chemistry techniques for detailed kinetic analysis

C. Werner, M. Hierlemann, 2000 .

Fluid Mechanical Interactions of Turbulent Flowing Liquids with the Wall - Revisited with a New Electrochemical Tool

C. Werner, G. Schmitt, M. Bakalli, 2005 .

A Gas‐Phase and Surface Kinetics Model for Silicon Epitaxial Growth with SiH2Cl2 in an RTCVD Reactor

A. Kersch, C. Werner, H. Schafer, 1995 .

Mathematical models for chemical vapor deposition

C. Kleijn, C. Werner, 1993 .

TIG narrow gap welding — new approaches to evaluate and improve the shielding gas coverage and the energy input

U. Füssel, C. Werner, S. Rose, 2014, Welding in the World.

A model for phosphorus segregation at the silicon-silicon dioxide interface

Marius K. Orlowski, C. Mazure, F. Lau, 1989 .

Equipment simulation of SiGe heteroepitaxy: Model validation by ab initio calculations of surface diffusion processes

A. Spitzer, C. Werner, M. Hierlemann, 1997 .

Equipment Simulation of Production Reactors for Silicon Device Fabrication

C. Werner, 1999 .

Selfconsistent simulation of sputter deposition with the Monte Carlo method

W. Morokoff, A. Kersch, C. Werner, 1994 .

Modeling of a sputter reactor using the direct simulation Monte Carlo method

W. Morokoff, A. Kersch, C. Werner, 1992, 1992 International Technical Digest on Electron Devices Meeting.