Jie Su

发表

Stress engineering with AlN/GaN superlattices for epitaxial GaN on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor

E. Armour, Jie Su, Balakrishnan Krishnan, 2015 .

Electrical and optical property of annealed Te-doped GaSb

Tong Liu, Youwen Zhao, Z. Dong, 2017 .

Thermally induced native defect transform in annealed GaSb

Tong Liu, Youwen Zhao, Z. Dong, 2016 .

Epitaxial Growth of InAlN/GaN Heterostructures on Silicon Substrates in a Single Wafer Rotating Disk MOCVD Reactor

A. Paranjpe, Jie Su, G. Papasouliotis, 2017 .

Uniform growth of III‐nitrides on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor

E. Armour, Jie Su, G. Papasouliotis, 2016 .

Growth and Implementation of Carbon-Doped AlGaN Layers for Enhancement-Mode HEMTs on 200 mm Si Substrates

S. Decoutere, D. Wellekens, N. Posthuma, 2016, Journal of Electronic Materials.

Stress engineering using AlN/GaN superlattices for epitaxy of GaN on 200 mm Si wafers

E. Armour, Jie Su, Balakrishnan Krishnan, 2014 .

Influence of MOCVD Growth Conditions on the Two-dimensional Electron Gas in AlGaN/GaN Heterostructures

A. Paranjpe, Jie Su, Balakrishnan Krishnan, 2013 .

Electronic structures of Hg-doped anatase TiO2 with different O vacancy concentrations

Xiaobing Yan, Lei Liu, Jie Su, 2014 .

Atomistic insight into hydrogen trapping at MC/BCC-Fe phase boundaries: The role of local atomic environment

Mao-qiu Wang, Zhi-Gang Yang, Hao Chen, 2021 .

Scaling behavior of dynamic hysteresis in multiferroic Bi5FeTi3O15 thin films

Hengshuai Li, Z. Chi, Jie Su, 2021, Journal of Materials Science: Materials in Electronics.

The formation and role of the SiO2 oxidation layer in the 4H-SiC/β-Ga2O3 interface

Jie Su, X. Xue, Naxin Zhu, 2021, Applied Surface Science.

Microstructures and electronic characters of β-Ga2O3 on different substrates: exploring the role of surface chemistry and structures.

Jie Su, X. Xue, Naxin Zhu, 2021, Physical chemistry chemical physics : PCCP.

Freestanding GaN substrate enabled by dual-stack multilayer graphene via hydride vapor phase epitaxy

Jiankun Yang, Yun Zhao, Dongdong Liang, 2020 .

Impact of Thickness on Contact Issues for Pinning Effect in Black Phosphorus Field‐Effect Transistors

Feng Wang, L. Liao, Changzhong Jiang, 2018 .

Improved surface and electrical properties of passivated GaSb with less alkaline sulfide solution

Tong Liu, Youwen Zhao, Z. Dong, 2015 .

Design of a tunable Fabry-Perot interferometer/photodiode (FPI/PD) spectral image sensor in visible wavelength range

Wolfgang Porod, Gary H. Bernstein, Patrick Fay, 2006, SPIE MOEMS-MEMS.

Impact of Al Pre-Deposition Layer on Crystalline Quality of GaN Grown on Si(111) Substrates.

Cheul‐Ro Lee, J. Baek, Jie Su, 2019, Journal of Nanoscience and Nanotechnology.