X. Xiu

发表

Simulation of a new style vertical HVPE system

P. Han, Rong Zhang, Youdou Zheng, 2012 .

Structure and magnetic properties of Co-doped ZnO powder prepared by sol-gel method

P. Han, R. Zhang, Y. Shi, 2005, 13th International Conference on Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004..

The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates

Dunjun Chen, Hai Lu, Rong Zhang, 2019, Nanotechnology.

Epitaxy and optical properties of InGaN/GaN multiple quantum wells on GaN hexagonal pyramids template

P. Han, Rong Zhang, Youdou Zheng, 2016 .

A Selective Etching Route for Large-Scale Fabrication of β-Ga2O3 Micro-/Nanotube Arrays

Rong Zhang, Youdou Zheng, Bin Liu, 2021, Nanomaterials.

Investigations of Sidewall Passivation Technology on the Optical Performance for Smaller Size GaN-Based Micro-LEDs

Dunjun Chen, Rong Zhang, Youdou Zheng, 2021, Crystals.

The Growth of GaN Films on Si Substrates by HVPE

Rong Zhang, Youdou Zheng, B. Shen, 2005 .

Stress-free InN nanowires grown on graphene by sublimation method

P. Han, Rong Zhang, Youdou Zheng, 2018 .

GaN Substrate Material for III–V Semiconductor Epitaxy Growth

Rong Zhang, X. Xiu, 2019, Light-Emitting Diodes.

Morphological evolution and characterization of GaN pyramid arrays fabricated by photo-assisted chemical etching

P. Han, Rong Zhang, Youdou Zheng, 2016 .

Nonpolar m-plane thin film GaN and InGaN/GaN light-emitting diodes on LiAlO2(100) substrates

D. Fu, Z. Xie, C. Liu, 2007 .

Schottky rectifiers fabricated on bulk GaN substrate analyzed by electron-beam induced current technique

Hai Lu, Rong Zhang, Youdou Zheng, 2008 .

Ultraviolet emission efficiencies of AlxGa1-xN films pseudomorphically grown on AlyGa1-yN template (x

Baigeng Wang, Youliao Zheng, Z. Xie, 2011 .

Biaxial and uniaxial strain effects on the ultraviolet emission efficiencies of AlxGa1−xN films with different Al concentrations

Baigeng Wang, R. Zhang, Youliao Zheng, 2010 .

Influence of high Mg doping on the microstructural and opto-electrical properties of AlGaN alloys

Dunjun Chen, P. Han, Rong Zhang, 2018, Superlattices and Microstructures.

Strain-modulated valence band engineering for enhancement of surface emission in polar and nonpolar plane AlN films

B. Liu, Baigeng Wang, R. Zhang, 2009 .

Pure-phase κ-Ga2O3 layers grown on c-plane sapphire by halide vapor phase epitaxy

Rong Zhang, Youdou Zheng, Wanli Xu, 2021 .

Application of halide vapor phase epitaxy for the growth of ultra-wide band gap Ga2O3

Rong Zhang, Youdou Zheng, X. Xiu, 2019, Journal of Semiconductors.

The Sign of Exciton-Photon Coupling in GaN-Based Triangular-like Ridge Cavity

Dunjun Chen, P. Han, Youdou Zheng, 2022, Crystals.

Study of buffer and epitaxy technology in two-step growth of aluminium nitride

P. Han, Rong Zhang, Youdou Zheng, 2008 .

Plasmonic Laser Using InGaN/GaN Nanorods with Different Shapes

Rong Zhang, B. Liu, T. Tao, 2017 .

Study on the self-absorption of InGaN quantum wells at high photon density.

Dunjun Chen, B. Liu, P. Han, 2020, Applied optics.

Effect of the V/III ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer

P. Han, Rong Zhang, Youdou Zheng, 2013 .

Characteristics of nanoporous InGaN/GaN multiple quantum wells

Zhihao Yu, P. Chen, R. Zhang, 2014 .

Characteristics of GaN thin films by inductively coupled plasma etching with Cl2/BCl3 and Cl2/Ar

P. Han, P. Chen, R. Zhang, 2012, Journal of Materials Science: Materials in Electronics.

A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode Structure

Dunjun Chen, Youdou Zheng, Z. Xie, 2022, 2206.07881.

High Power Figure-of-Merit, 10.6-kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub-100-µm Anode-to-Cathode Spacing.

Dunjun Chen, Rong Zhang, Youdou Zheng, 2021, Small.

High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier*

Rong Zhang, Youliao Zheng, Yi Shi, 2017 .

Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

Dunjun Chen, Hai Lu, P. Han, 2011 .

Optical and Structural Properties of Cr-Doped GaN Grown by HVPE Method

P. Han, Rong Zhang, Youdou Zheng, 2010 .

Study of structure and magnetic properties of Ni-doped ZnO-based DMSs

R. Zhang, Z. Xie, Z. Tao, 2006 .

Preparation and characterization of GaN micro/nano- structures by the electrodeless photo-assisted chemical etching

Hai Lu, B. Liu, P. Han, 2015 .

Single-crystal GaN layer converted from β-Ga2O3 films and its application for free-standing GaN

Rong Zhang, Youdou Zheng, B. Liu, 2019, CrysteEngComm.

Current transport mechanisms in Pt/Au Schottky contacts to AlInGaN using AlGaN/InGaN short-period superlattices

Rong Zhang, Youdou Zheng, Yi Shi, 2017 .

Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition

Z. G. Wang, R. Zhang, H. Lu, 2011 .

Catalyst synthesis and growth of indium nitride nanodots

Rong Zhang, Y. Shi, X. Xiu, 2005, 13th International Conference on Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004..

The growth and properties of an m-plane InN epilayer on LiAlO2 (100) by metal-organic chemical vapor deposition

P. Han, Rong Zhang, Youdou Zheng, 2012 .

The enhancement of light-emitting efficiency using GaN-based multiple quantum well light-emitting diodes with nanopillar arrays

P. Han, Rong Zhang, Youdou Zheng, 2013 .

Structural characterization of Al 0.55 Ga 0.45 N epitaxial layer determined by high resolution x-ray diffraction and transmission electron microscopy

Dunjun Chen, P. Han, Rong Zhang, 2017 .

Microstructure and dislocation of epitaxial InN films revealed by high resolution x-ray diffraction

P. Han, W. Schaff, R. Zhang, 2008 .

Dielectric properties of AlN film on Si substrate

R. Zhang, B. Shen, Y. Shi, 2004 .

Polarization and temperature dependence of photoluminescence of m-plane GaN grown on γ-LiAlO2 (100) substrate

P. Han, P. Chen, R. Zhang, 2009 .

In-Situ Measurement of Junction Temperature and Light Intensity of Light Emitting Diodes With an Internal Sensor Unit

B. Liu, Rong Zhang, Youdou Zheng, 2015, IEEE Electron Device Letters.

Study of GaN nanorods converted from β-Ga2O3

Rong Zhang, Youdou Zheng, B. Liu, 2018 .

Anisotropic crystallographic properties, strain, and their effects on band structure of m-plane GaN on LiAlO2(100)

P. Han, B. Liu, P. Chen, 2008 .

Temperature dependent growth of InGaN/GaN single quantum well

P. Han, Zhihao Yu, P. Chen, 2012 .

Investigation of dislocations and defects in epitaxial lateral overgrown GaN by photoelectrochemical wet etching

Rong Zhang, Youdou Zheng, B. Shen, 2003 .

Effect of dislocations in photoelectrochemical etching process of N-type GaN

R. Zhang, B. Shen, Y. Shi, 2001, 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).

The optimization of surface plasmon coupling efficiency in InGaN/GaN nanowire based nanolasers

Dunjun Chen, Rong Zhang, Youdou Zheng, 2020, Applied Physics Express.

The LiNbO3 thin films deposited on the Al0.28Ga0.72N/GaN substrate

R. Zhang, Youliao Zheng, X. Xiu, 2010 .

Temperature dependence of the pyroelectric coefficient and the spontaneous polarization of AlN

P. Han, R. Jiang, R. Zhang, 2007 .

Growth and nitridation of β-Ga2O3 thin films by Sol-Gel spin-coating epitaxy with post-annealing process

Youdou Zheng, Bin Liu, T. Tao, 2021, Journal of Sol-Gel Science and Technology.

Self-Powered Solar-Blind Photodetectors Based on Vertically Aligned GaN@Ga2O3 Core–Shell Nanowire Arrays

Dunjun Chen, Youdou Zheng, Bin Liu, 2022, ACS Applied Nano Materials.

Modification of the valence band structures of polar and nonpolar plane wurtzite-GaN by anisotropic strain

Rong Zhang, Youdou Zheng, B. Liu, 2009 .

Analysis of magnetic structures of iron nitrides by Landau's theory of second-order phase transitions

Rong Zhang, Youdou Zheng, X. Wang, 2013 .

Exploring optimal UV emission windows for AlGaN and AlInN alloys grown on different templates

R. Zhang, D. Fu, G. Edwards, 2011 .

Porous single-crystal GaN films obtained by direct top-down nitridation of bulk and film β-Ga2O3

Rong Zhang, Youdou Zheng, B. Liu, 2019, Superlattices and Microstructures.

Growth of $\beta$-Ga$_{2}$O$_{3}$ Films on Sapphire by Hydride Vapor Phase Epitaxy

P. Han, Rong Zhang, Youdou Zheng, 2018 .

Determination of Ge Fraction and Carrier Concentration in Si1-XGex/Si by Capacitance-Voltage Method

P. Han, Rong Zhang, Youdou Zheng, 2011 .

Investigation of localization effect in GaN-rich InGaN alloys and modified band-tail model

Youdou Zheng, D. Fu, Ming Li, 2013, Bulletin of Materials Science.

Impact of anisotropic strains on low-frequency dielectric properties and room-temperature polar phas

R. Zhang, X. Xiu, Z. Xie, 2011 .

Effect of additional HCl flow on the surface morphology of GaN grown on sapphire by HVPE

Rong Zhang, Yi Shi, S. Gu, 2001, 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).

Effect of Additional HCl on the Surface Morphology of High Quality GaN on Sapphire by HVPE

Rong Zhang, B. Shen, Youliao Zheng, 2001 .

Impact of lattice strain on the phase formation, polarization, and dielectric constant of PbZr1−xTixO3 films

P. Han, R. Jiang, R. Zhang, 2008 .

Characterization of 4H-SiC grown on AlN/Si(100) by CVD

R. Zhang, Youliao Zheng, Shuyan Xu, 2006 .

The growth of 3C-SiC on Si substrate using a SiCN buffer layer

P. Chen, R. Zhang, J. Li, 2018, Thin Solid Films.

The formation of SiCN film on Si substrate by constant-source diffusion

P. Chen, R. Zhang, Youliao Zheng, 2017 .

An analyzing of anomalous peak in the capacitance-voltage characteristics at Hg/GaN Schottky contact

R. Zhang, H. Lu, X. Xiu, 2011, 2011 Academic International Symposium on Optoelectronics and Microelectronics Technology.

Synthesis and Growth Mechanism: A Novel Fishing Rod-Shaped GaN Nanorods

Hai Lu, P. Han, Rong Zhang, 2014 .

Structural and magnetic properties in Mn-doped GaN grown by metal organic chemical vapor deposition

Y. Shi, Xiaomin Li, Z. Xie, 2008 .

Magnetic and electrical properties of ε-Fe3N on c-plane GaN

Youdou Zheng, B. Liu, Z. Xie, 2012 .

The Growth of Si on SiC Complex Substrate by CVD

R. Zhang, X. Xiu, P. Han, 2012 .

Circular photogalvanic effect at inter-band excitation in InN

Bin Liu, Xiangqian Xiu, Hai Lu, 2008 .

Observation of the surface circular photogalvanic effect in InN films

R. Zhang, Hong Lu, D. Fu, 2009 .

Obvious improvement of light extraction obtained by anodic aluminum oxide coverage on GaN surface

P. Han, P. Chen, R. Zhang, 2013 .

Localized surface plasmon enhanced InGaN-based light-emitting diodes with polygonal Au/Al nanoparticles

Dunjun Chen, Rong Zhang, Youdou Zheng, 2021, 2104.00849.

The contributions of the acoustic modes and optical modes to the primary pyroelectric coefficient of GaN

Xiangqian Xiu, Zu-liang Liu, R. Zhang, 2009 .

Phenomenological model for the spontaneous polarization of GaN

Ruolian Jiang, Xiangqian Xiu, Yuechun Shi, 2007 .

A Band-Gap Energy Model of the Quaternary Alloy In x Ga y Al 1 −x−y N using Modified Simplified Coherent Potential Approximation

Rong Zhang, Youdou Zheng, Ming Li, 2013 .

A modified simplified coherent potential approximation model of band gap energy of III–V ternary alloys

Youdou Zheng, D. Fu, Bin Liu, 2012, Science China Physics, Mechanics and Astronomy.

A modified simplified coherent potential approximation model of band gap energy of III–V ternary alloys

Rong Zhang, Youdou Zheng, B. Liu, 2012 .

The growth temperatures dependence of optical and electrical properties of InN films

B. Liu, P. Han, Rong Zhang, 2008 .

Gate-Controlled NiO/Graphene/4H-SiC Double Schottky Barrier Heterojunction Based on a Metal-Oxide-Semiconductor Structure for Dual-Mode and Wide Range Ultraviolet Detection

Dunjun Chen, P. Han, Youdou Zheng, 2022, ACS Applied Electronic Materials.

Single-crystalline GaN porous template prepared by a simple top-down nitridation technique

Rong Zhang, Youdou Zheng, B. Liu, 2019, Materials Letters.

Effect of lattice defects on the property of GaN crystal: A molecular dynamics simulation study

Dunjun Chen, Rong Zhang, Youdou Zheng, 2015 .

Gate voltage and structure parameter modulated spin splitting in AlGaN/GaN quantum wells

R. Zhang, D. Fu, X. Xiu, 2011 .

Rashba spin splitting for the first two subbands in AlxGa1−xN/GaN heterostructures

Youdou Zheng, D. Fu, Z. Xie, 2010 .

Preparation of vertically aligned GaN@Ga2O3 core-shell heterostructured nanowire arrays and their photocatalytic activity for degradation of Rhodamine B

B. Liu, Rong Zhang, Youdou Zheng, 2020 .

Leakage current and sub-bandgap photo-response of oxygen-plasma treated GaN Schottky barrier diodes

Dunjun Chen, Hai Lu, P. Han, 2011 .

Properties of a CdZnO/ZnO multiple quantum-well light-emitting diode

Bin Liu, Z. Xie, X. Xiu, 2016, Journal of the Korean Physical Society.

Design of deep ultraviolet light-emitting diodes with staggered AlGaN quantum wells

K. X. Dong, P. Han, P. Chen, 2014 .

Approach to Single-Mode Dominated Resonant Emission in GaN-Based Square Microdisks on Si

Dunjun Chen, P. Han, Rong Zhang, 2020 .

Realization of regular resonance mode in GaN-based polygonal microdisks on Si

Dunjun Chen, P. Han, Rong Zhang, 2020 .

Properties of an AlGaN/AlN distributed-Bragg-reflector structure

Rong Zhang, Z. Xie, X. Xiu, 2014 .

Influence of Dry Etching Damage on the Internal Quantum Efficiency of Nanorod InGaN/GaN Multiple Quantum Wells

Xu Zhou, P. Han, Youdou Zheng, 2012 .

Preparation of β-Ga2O3 films on off-angled sapphire substrates and solar-blind ultraviolet photodetectors

Youdou Zheng, Bin Liu, T. Tao, 2022, Journal of Physics D: Applied Physics.

Study of β-Ga2O3 films hetero-epitaxially grown on off-angled sapphire substrates by halide vapor phase epitaxy

Rong Zhang, Youdou Zheng, Wanli Xu, 2021 .

Microstructural analysis of heteroepitaxial β-Ga2O3 films grown on (0001) sapphire by halide vapor phase epitaxy

B. Liu, Rong Zhang, Youdou Zheng, 2020, Journal of Physics D: Applied Physics.

Solar-blind ultraviolet photodetector based on vertically aligned single-crystalline β-Ga2O3 nanowire arrays

Rong Zhang, Youdou Zheng, B. Liu, 2020 .

High-efficiency photon–electron coupling resonant emission in GaN-based microdisks on Si

Dunjun Chen, P. Han, Rong Zhang, 2020 .

Fabrication of blue and green non‐polar InGaN/GaN multiple quantum well light‐emitting diodes on LiAlO2(100) substrates

Hai Lu, P. Han, Rong Zhang, 2010 .

Non-polar m-plane GaN film and polarized InGaN/GaN LED grown on LiAlO2 (001) substrates

Z. L. Xie, X. Q. Xiu, Y. D. Zheng, 2010, OPTO.

Comparison study of GaN films grown on porous and planar GaN templates

B. Liu, Rong Zhang, Youdou Zheng, 2020 .

Cobalt–Carbon Complexes Induced Ferromagnetism in Chemically Modified Perovskite Dilute Magnetic Complex Oxides

B. Liu, Yi Shi, Yongbing Xu, 2013 .

Synthesis and Properties of InGaN/GaN Multiple Quantum Well Nanowires on Si (111) by Molecular Beam Epitaxy

Dunjun Chen, Hai Lu, Rong Zhang, 2019, physica status solidi (a).

Dynamic scaling of the growth process of GaN thin films deposited on sapphire substrates by HVPE

Rong Zhang, Youdou Zheng, B. Shen, 2004 .

High‐Responsivity Graphene/4H‐SiC Ultraviolet Photodetector Based on a Planar Junction Formed by the Dual Modulation of Electric and Light Fields

Dunjun Chen, P. Han, Rong Zhang, 2020, Advanced Optical Materials.

In-plane anisotropic photoluminescence of C-plane GaN under asymmetric biaxial strain

P. Han, B. Liu, R. Zhang, 2009 .

Strain- and Compositional Modulation of the Near-Band-Edge Band Structures of AlN and Its Ternary Alloys with GaN and InN

Rong Zhang, Youdou Zheng, B. Liu, 2009, 2009 13th International Workshop on Computational Electronics.

Metal–Semiconductor–Metal Ultraviolet Avalanche Photodiodes Fabricated on Bulk GaN Substrate

R. Zhang, F. Xie, X. Xiu, 2011, IEEE Electron Device Letters.

Structural and optical characteristics of AlxGa1-xN/AlN superlattice

Hai Lu, P. Han, Rong Zhang, 2009 .

The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurementctions

P. Han, Rong Zhang, Youdou Zheng, 2018, IEEE Photonics Journal.

Structural properties of GaN(0001) epitaxial layers revealed by high resolution X-ray diffraction

Rong Zhang, Youdou Zheng, B. Liu, 2010 .

Synthesis and characterization of β -Ga 2 O 3 @GaN nanowires

Rong Zhang, Youdou Zheng, B. Liu, 2019, Chinese Physics B.

Magnetic and transport properties of single-phase N-rich iron nitrides

Rong Zhang, Zhikuo Tao, Xiangqian Xiu, 2019, Materials Letters.

The parameters in the band-anticrossing model for InxGa1−xNyP1−y before and after annealing

Rong Zhang, Youdou Zheng, B. Liu, 2011 .

Simulation of growing GaN in vertical HVPE reactor

Rong Zhang, Youdou Zheng, B. Liu, 2010 .

Simulation of a new style vertical HVPE system

P. Han, Youdou Zheng, Bin Liu, 2012, Science China Physics, Mechanics and Astronomy.

Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets

P. Han, Zhihao Yu, P. Chen, 2012 .

Study of Dislocation Densities of Thick GaN Films

P. Han, Rong Zhang, Youdou Zheng, 2014, CIT 2014.

GaN hexagonal pyramids formed by a photo-assisted chemical etching method

Hai Lu, P. Han, Rong Zhang, 2014 .

Effect of the V/III ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer

P. Han, Youdou Zheng, Bin Liu, 2013, Science China Physics, Mechanics and Astronomy.

Impact of V/III ratio on GaN growth by HVPE

R. Zhang, Y. Shi, X. Xiu, 2005, 13th International Conference on Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004..

A thermodynamic model and estimation of the experimental value of spontaneous polarization in a wurtzite GaN

P. Han, Zu-liang Liu, P. Chen, 2009 .

The growth temperature dependence of In aggregation in two-step MOCVD grown InN films on sapphire

B. Shen, Y. Shi, Bin Liu, 2004 .

Growth and properties of wide spectral white light emitting diodes

B. Liu, P. Han, Rong Zhang, 2011 .

Plasma assisted molecular beam epitaxy growth mechanism of AlGaN epilayers and strain relaxation on AlN templates

Dunjun Chen, Rong Zhang, Youdou Zheng, 2021 .

The temperature dependence of optical properties of InGaN alloys

Bin Liu, Shulin Gu, Hui Chen, 2012 .

Initial stages of the cubic-InN growth with the technique of the pre-deposition of indium

R. Zhang, B. Shen, Y. Shi, 2007 .

High-Efficiency InGaN/GaN Nanorod Arrays by Temperature Dependent Photoluminescence

P. Han, Youdou Zheng, Zhihao Yu, 2013 .

Study of the defects in GaN epitaxial films grown on sapphire by HVPE

Lin Chen, Shulin Gu, Zili Xie, 2008, International Conference on Thin Film Physics and Applications.

Low leakage Schottky rectifiers fabricated on homoepitaxial GaN

Hai Lu, Rong Zhang, Xiangqian Xiu, 2007 .

GaN nanopillars with a nickel nano-island mask

Rong Zhang, Youdou Zheng, Shiying Zhang, 2013 .

Studies on the oxidation of iron films on differently oriented Si substrates

Rong Zhang, Youdou Zheng, Yi Shi, 2005, 13th International Conference on Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004..

Synthesis and Properties of Ga x Mn 1-x N films

R. Zhang, B. Shen, Yuhu Shi, 2004 .

Research on the Mn-implanted GaN with ferromagnetism at room temperature

R. Zhang, B. Shen, Youliao Zheng, 2003 .

Optical and Structural Properties of Mn-Implanted GaN Films

R. Zhang, B. Shen, Youliao Zheng, 2001 .