R. Stall

R. Stall, B. Yoo, M. Mckee, 1992, LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels.

Growth-parameter dependence of deep levels in molecular-beam-epitaxial GaAs

L. Eastman, P. Kirchner, C. Wood, 1980 .

Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN

M. Schurman, R. Stall, Y. Lu, 1997 .

In-situ plasma cleaning of stainless steel III-V MOCVD growth systems

R. Burnham, G. Tompa, R. Stall, 1992 .

Effect of hydrogen on Ca and Mg acceptors in GaN

J. Zolper, S. Pearton, J. Lee, 1996 .

Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films

R. Davis, T. Kuech, D. Aspnes, 1998 .

Regulation of Myosin Light Chain Kinase during Insulin-Stimulated Glucose Uptake in 3T3-L1 Adipocytes

Y. Patel, R. Stall, Joseph Ramos, 2013, PloS one.

Optical Studies of MOCVD In x Ga 1-x N Alloys

Z. Feng, M. Schurman, W. Shan, 1996 .

Differential surface photovoltage spectroscopy characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure

F. Pollak, R. Stall, J. Debray, 2003 .

Mass Production of High Brightness Blue and Green LEDs by MOCVD

R. F. Karlicek, M. G. Brown, M. Schurman, 1999 .

Phase separation in InGaN/GaN multiple quantum wells and its relation to brightness of blue and green LEDs

R. F. Karlicek, I. Ferguson, A. Osinsky, 1998 .

Optical transitions in InxGa1−xN alloys grown by metalorganic chemical vapor deposition

Z. Feng, M. Schurman, W. Shan, 1996 .

Nondestructive, Room Temperature Determination Of The Nature Of The Band-Bending (Carrier Type) In Group III Nitrides Using Contactless Electroreflectance And Surface Photovoltage Spectroscopy

Z. Feng, F. Pollak, M. Schurman, 1997 .

Large Area PbZr 1−x Ti x O 3 (PZT) Thin Films Deposited by MOCVD Processes

Tingkai Li, R. Stall, P. Zawadzki, 1997 .

Novel Mocvd Processes for Nanoscale Oxide Thin Films

Tingkai Li, R. Stall, Yongfei Zhu, 1996 .

The adsorption and subsequent oxidation of AsH3 and PH3 on activated carbon

R. Stall, C. Sorenson, J. Colabella, 1988 .

High dielectric constant BaxSr1-xTiO3 (BST) thin films made by mocvd techniques for dram applications

Tingkai Li, Yicheng Lu, R. Stall, 1997 .

Burgers vector determination of V-shaped dislocations in InGaAs layers grown on (001) InP substrates

S. Chu, S. Nakahara, R. Stall, 1986 .

Structural and electrical properties of lattice‐matched Ca0.44Sr0.56F2/GaAs structures grown by molecular beam epitaxy

C. Tu, R. Stall, J. Gibson, 1986 .

A parametric investigation of GaAs epitaxial growth uniformity in a high speed, rotating-disk MOCVD reactor

Gary S. Tompa, Richard A. Stall, P. Zawadzki, 1988 .

Thermal stability of W ohmic contacts to n‐type GaN

F. Ren, S. Pearton, Yicheng Lu, 1996 .

High Resolution Helium Ion Microscopy of 3 T 3L 1 Adipocytes

Y. Patel, Adam Boseman, R. Stall, 2014 .

Raman characterization of GaAs/InGaP heterostructure bipolar transistor

E. Armour, R. Stall, S.Z. Sun, 2000, 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498).

Determination of the carrier-type at III-nitride semiconductor surfaces/interfaces using contactless electroreflectance

Z. Feng, F. Pollak, M. Schurman, 1998 .

Elemental vapor transport epitaxy of II-VI semiconductors

G. Tompa, Yicheng Lu, A. Gurary, 1993 .

Vapor transport epitaxy: an advanced growth process for III-V and II-VI semiconductors

Gary S. Tompa, Richard A. Stall, A. Gurary, 1992, Other Conferences.

Annealing of ion implanted gallium nitride

J. Zolper, S. Pearton, H. Tan, 1998 .

High dose Si- and Mg-implantation in GaN: Electrical and structural analysis

J. Zolper, M. Crawford, R. Stall, 1997 .

Indium gallium arsenide microwave power transistors

G. A. Johnson, L. Messick, R. Stall, 1991 .

A molybdenium source, gate and drain metallization system for GaAs MESFET layers grown by molecular beam epitaxy☆

L. Eastman, C. Wood, W. Devlin, 1980 .

Multi-wafer growth of highly uniform InGaP/GaAs by low pressure MOVPE

D. Walker, R. Stall, P. Norris, 1992 .

A comparative study of (100) GaAs films grown by liquid-phase epitaxy, molecular-beam epitaxy and metal-organic chemical vapor deposition by Raman spectroscopy

A. Jayaraman, R. Stall, V. Swaminathan, 1985 .

Gallium nitride-based devices and methods of manufacture

B. Peres, Shiping Guo, I. Eliashevich, 2003 .

GaN and AlGaN metal–semiconductor–metal photodetectors

Yicheng Lu, Ian T. Ferguson, Zhe Chuan Feng, 1997 .

Characterization of grain boundaries using deep level transient spectroscopy

L. Eastman, M. Spencer, C. Wood, 1979 .

OPTICS 2409 High power mid-infrared interband cascade lasers based on type-II quantum wells

Takashi Jimbo, Rui Q. Yang, Fredrik Laurell, 1997 .

Ion implantation and annealing studies in III-V nitrides

J. Zolper, S. Pearton, H. Tan, 1996 .

Effect of substrate pretreatment on growth of GaN on (0001) sapphire by low pressure metalorganic chemical vapor deposition

Yicheng Lu, M. Schurman, R. Stall, 1995 .

Thermal and flow issues in the design of metalorganic chemical vapor deposition reactors

G. Tompa, A. Thompson, A. Gurary, 1994 .

Novel high temperature metal organic chemical vapor deposition vertical rotating-disk reactor with multizone heating for GaN and related materials

A. Thompson, A. Gurary, R. Stall, 1995 .

Investigation of the wafer temperature uniformity in an omvpe vertical rotating disk reactor

A. Thompson, A. Gurary, R. Stall, 1995 .

Temperature Measurements Using In Thermocouple In The Mocvd Rotating Disk Reactors

A. Gurary, R. Stall, 1995 .

Design and applications of large area RDRs

Gary S. Tompa, Hui Chun Liu, Richard A. Stall, 1994 .

Ion‐implanted GaN junction field effect transistor

J. Zolper, S. Pearton, A. Baca, 1996 .

Metal Organic Chemical Vapor Deposition of Al and CuAl Alloy Films in a Vertical, High-Speed, Rotating Disk Reactor

G. Tompa, R. Stall, J. Norman, 1992 .

Morphology of GaAs and AlxGa1−xAs grown by molecular beam epitaxy

R. Stall, N. Schumaker, V. Swaminathan, 1985 .

High frequency transistors on MOCVD grown InGaAs/InP

G. A. Johnson, L. Messick, R. Stall, 1990, International Conference on Indium Phosphide and Related Materials.

Ultra low resistance ohmic contacts to n-GaAs

L. Eastman, K. Board, C. Wood, 1979 .

Ballistic electron motion in GaAs at room temperature

M. Shur, L. Eastman, K. Board, 1980 .

Optical properties of InxGa1−xN alloys grown by metalorganic chemical vapor deposition

Zhe Chuan Feng, Eugene E. Haller, Matthew D. McCluskey, 1998 .

Photoluminescence and Raman properties of MOCVD-grown In/sub 0.5/(Ga/sub 1-x/Al/sub x/)/sub 0.5/P layers under different growth conditions

E. Armour, R. Stall, P. Zawadzki, 1997, Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials.

Uniform Growth of InSb on GaAs in a Rotating Disk Reactor by LPMOVPE

R. Stall, B. Yoo, M. Mckee, 1992, Sixth International Conference Metalorganic Vapor Phase Epitaxy.

Structural properties of GaN grown by MOVPE turbodisc mass-production reactor

I. Ferguson, A. Thompson, M. Schurman, 1997 .

Pressure-dependent photoluminescence study of InxGa1−xN

Z. Feng, M. Schurman, W. Shan, 1997 .

The Role of Impurities in LP-MOCVD Grown Gallium Nitride

Yicheng Lu, M. Schurman, R. Stall, 1995 .

Near-band-edge photoluminescence emission in AlxGa1−xN under high pressure

E. Haller, J. Ager, W. Walukiewicz, 1998 .

Variation of GaN valence bands with biaxial stress and quantification of residual stress

R. Davis, T. Kuech, D. Aspnes, 1997 .

Growth and characterization of GaN thin films on SiC SOI substrates

A. Steckl, R. Stall, C. Tran, 1997 .

Recessed gate GaN field effect transistor

F. Ren, S. Pearton, J. Lee, 1997 .

Sputtered AlN encapsulant for high‐temperature annealing of GaN

Albert G. Baca, John C. Zolper, Stephen J. Pearton, 1996 .

Raman scattering as a characterization tool for epitaxial GaN thin films grown on sapphire by turbo disk metal-organic chemical vapor deposition.

M. Schurman, R. Stall, Z C Feng, 1997, Applied optics.

Growth of InGaAsP films in a Multi-Wafer high Speed Rotating Disk Reactor by Mocvd

R. Stall, P. Norris, M. Mckee, 1989 .

Effect of oxygen on In0.53Ga0.47As films grown by molecular beam epitaxy

R. Stall, V. Swaminathan, H. Cox, 1985 .

Ion implantation and rapid thermal processing of Ill-V nitrides

J. Zolper, C. Abernathy, C. Vartuli, 1996 .

Predicting the solar probe plus solar array output

M. Lockwood, M. Butler, A. Boca, 2014, 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).

Temperature dependence of energy gap in GaN thin film studied by thermomodulation

Michael Wraback, Yicheng Lu, Richard A. Stall, 1997 .

High Pressure Study of III-Nitrides and Related Heterostructures

E. Haller, J. Ager, W. Walukiewicz, 1997 .

Photoluminescence and Sims Studies of Hydrogen Passivation of Mg-Doped P-Type Gallium Nitride

M. Wraback, M. Schurman, R. Stall, 1995 .

Growth of MnS, Cd 1-x Mn x Se, and MnS 1-x Se x Films by Molecular Beam Epitaxy (MBE) and Elemental Vapor Transport Epitaxy (EVTE) Techniques

G. Tompa, Yicheng Lu, A. Gurary, 1993 .

Reproducibility of GaN and InGaN films grown in a multi-wafer rotating-disc reactor

I. Ferguson, A. Thompson, M. Schurman, 1997 .

Effect of shroud flow on high quality InxGa1−xN deposition in a production scale multi-wafer-rotating-disc reactor

R. Kolbas, M. Schurman, R. Stall, 1996 .