J. Hållstedt

发表

Development and experimental verification of analytical models for printable interdigital capacitor sensors on paperboard

Qiang Chen, Yi Feng, J. Hållstedt, 2009, 2009 IEEE Sensors.

On the electron mobility enhancement in biaxially strained Si MOSFETs

L. Selmi, D. Esseni, B. Malm, 2008 .

Hole mobility in ultrathin body SOI pMOSFETs with SiGe or SiGeC channels

M. Ostling, J. Hållstedt, M. von Haartman, 2006, IEEE Electron Device Letters.

Strain and Electrical Characterization of Boron-Doped SiGeC Layers Grown by Chemical Vapor Deposition

H. Radamson, J. Hållstedt, S. Zhang, 2004 .

Sidewall transfer lithography for reliable fabrication of nanowires and deca-nanometer MOSFETs

H. Radamson, J. Hållstedt, P. Hellström, 2008 .

The effect of carbon and germanium on phase transformation of nickel on Si1-x-yGexCy epitaxial layers

Mats Blomqvist, Lars Hultman, Henry H. Radamson, 2004 .

Growth and Characterization of Boron-Doped Si1-x-yGexCy Layers Grown by Reduced Pressure Chemical Vapor Deposition

H. Radamson, J. Hållstedt, 2005 .

Epitaxy and characterization of SiGeC layers grown by reduced pressure chemical vapor deposition

J. Hållstedt, 2004 .

Growth of high quality epitaxial Si1-x-yGexCy layers by using chemical vapor deposition

H. Radamson, L. Hultman, J. Hållstedt, 2004 .

Selective epitaxial growth of B-doped SiGe and HCl etch of Si for the formation of SiGe:B recessed source and drain (pMOS transistors)

M. Kolahdouz, H. Radamson, J. Hållstedt, 2008 .

Integration of HCl chemical vapour etching and SiGe:B selective epitaxy for source/drain application in MOSFETs

M. Kolahdouz, M. Östling, H. Radamson, 2006 .

Comprehensive Evaluation and Study of Pattern Dependency Behavior in Selective Epitaxial Growth of B-Doped SiGe Layers

J. Hallstedt, M. Ostling, R. Wise, 2009, IEEE Transactions on Nanotechnology.

High boron incorporation in selective epitaxial growth of SiGe layers

R. Wise, M. Kolahdouz, M. Östling, 2007 .

Improvement in epitaxial quality of selectively grown Si1−xGex layers with low pattern sensitivity for CMOS applications

M. Östling, H. Radamson, J. Hållstedt, 2005 .

Methods to reduce the loading effect in selective and non-selective epitaxial growth of sigec layers

M. Östling, H. Radamson, J. Hållstedt, 2004 .

Vacancy-impurity pairs in n-type Si1-xGex studied by positron spectroscopy

H. Radamson, J. Hållstedt, J. Slotte, 2006 .

Incorporation of boron in SiGe(C) epitaxial layers grown by reduced pressure chemical vapor deposition

M. Östling, H. Radamson, J. Hållstedt, 2005 .

Leakage current reduction in 80 nm biaxially strained Si nMOSFETs on in-situ doped SiGe virtual substrates

B. Malm, M. Oehme, M. Ostling, 2007, European Solid-State Device Research Conference.

Investigation of Properties of Highly Boron-Doped SiGe(C) Thin Layers

H. Radamson, V. Palenskis, J. Hållstedt, 2004 .

Application of high-resolution x-ray diffraction for detecting defects in SiGe(C) materials

Henry H. Radamson, Julius Hållstedt, H. Radamson, 2005 .

A robust spacer gate process for deca-nanometer high-frequency MOSFETs

B. Malm, M. Östling, H. Radamson, 2006 .

Device Integration Issues Towards 10 nm MOSFETs

Zhen Zhang, J. Hallstedt, Shili Zhang, 2006, 2006 25th International Conference on Microelectronics.

Application of selective epitaxy for formation of ultra shallow SiGe-based junctions

M. Östling, H. Radamson, V. Palenskis, 2004 .

Influence of a Si layer intercalated between Si0.75Ge0.25 and Ni on the behavior of the resulting NiSi1−uGeu film

Shi-Li Zhang, Zhibin Zhang, T. Jarmar, 2004 .