Dimitris P. Ioannou

Hot carrier effects on the RF performance degradation of nanoscale LNA SOI nFETs

Dimitris P. Ioannou, Y. Tan, R. Logan, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

HKMG CMOS technology qualification: The PBTI reliability challenge

Dimitris P. Ioannou, 2014, Microelectron. Reliab..

Mechanical stress effects on p-channel MOSFET performance and NBTI reliability

Dimitris P. Ioannou, Giuseppe La Rosa, 2014, 2014 IEEE International Reliability Physics Symposium.

Positive Bias Temperature Instability Effects in nMOSFETs With HfO 2 /TiN Gate Stacks

Dimitris P. Ioannou, Steve Mittl, Giuseppe La Rosa, 2009 .

Burn-in stress induced BTI degradation and post-burn-in high temperature anneal (Bake) effects in advanced HKMG and oxynitride based CMOS ring oscillators

Dimitris P. Ioannou, D. Brochu, S. Mittl, 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

A Thin-Film SOI 180nm CMOS RF Switch Technology

Alvin J. Joseph, James S. Dunn, Dimitris P. Ioannou, 2009 .