M. Bawedin

Unusual floating body effect in fully depleted MOSFETs

D. Flandre, S. Cristoloveanu, M. Bawedin, 2004, 2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573).

Scalability of MSD memory effect

T. Ernst, S. Cristoloveanu, A. Hubert, 2009, 2009 10th International Conference on Ultimate Integration of Silicon.

Innovative capacitorless SOI DRAMs

F. Andrieu, A. Zaslavsky, S. Cristoloveanu, 2012, 2012 IEEE International SOI Conference (SOI).

Beyond TFET: Alternative mechanisms for CMOS-compatible sharp-switching devices

C. Fenouillet-Béranger, A. Zaslavsky, S. Cristoloveanu, 2014, 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

Feasibility Demonstration of New e-NVM Cells Suitable for Integration at 28 nm

A. Asenov, Y. Taur, B. Cheng, 2022 .

Total Dose Effects on the Performance of Irradiated Capacitorless MSDRAM Cells

peixiong zhao, E. Zhang, D. Fleetwood, 2010, IEEE Transactions on Nuclear Science.

Z2-FET memory for low power applications

Yuan Taur, Cyrille Le Royer, Sorin Cristoloveanu, 2017 .

A Capacitorless 1T-DRAM on SOI Based on Dynamic Coupling and Double-Gate Operation

D. Flandre, S. Cristoloveanu, M. Bawedin, 2008, IEEE Electron Device Letters.

Evidence of Supercoupling Effect in Ultrathin Silicon Layers Using a Four-Gate MOSFET

S. Cristoloveanu, S. Athanasiou, M. Bawedin, 2017, IEEE Electron Device Letters.