Man Chang

发表

Excellent resistance switching characteristics of Pt/SrTiO/sub 3/ schottky junction for multi-bit nonvolatile memory application

H. Hwang, I. Yoo, Dongsoo Lee, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Excellent Switching Uniformity of Cu-Doped $\hbox{MoO}_{x}/\hbox{GdO}_{x}$ Bilayer for Nonvolatile Memory Applications

H. Hwang, D. Seong, Seungjae Jung, 2009, IEEE Electron Device Letters.

Device Performance and Reliability Characteristics of Tantalum–Silicon–Nitride Electrode/Hafnium Oxide n-Type Metal–Oxide–Semiconductor Field-Effect Transistor Depending on Electrode Composition

H. Hwang, M. Jo, B. Lee, 2009 .

Transient charge trapping and detrapping properties of a thick SiO2/Al2O3 stack studied by short single pulse Id-Vg

H. Hwang, M. Jo, Seungjae Jung, 2009 .

Droplet evaporation-induced ferritin self-assembled monolayer as a template for nanocrystal flash memory

H. Hwang, M. Jo, Seungjae Jung, 2007 .

Contribution of Interface States and Oxide Traps to the Negative Bias Temperature Instability of High- $k$ pMOSFETs

Hyunsang Hwang, Rino Choi, Minseok Jo, 2009 .

Characteristics of Traps Induced by Hot Holes Under Negative-Bias Temperature Stress in a pMOSFET

H. Hwang, M. Jo, D. Seong, 2009, IEEE Electron Device Letters.

Formation of TaN nanocrystals embedded in silicon nitride by phase separation methods for nonvolatile memory applications

H. Hwang, Seungjae Jung, Hyejung Choi, 2007 .

Advanced impurity trap memory with atomic-scale Ti impurities on LaAlO3: Evidence for the origins of enhanced memory performance

H. Hwang, M. Jo, Seungjae Jung, 2009 .

Study of Fluorine Incorporation in the Blocking Oxide of MANOS-Type Flash Memory Devices

H. Hwang, M. Jo, Seungjae Jung, 2008 .

The effect of KrF laser annealing within an ultrashort time on metal-alumina-nitride-oxide-silicon-type flash memory devices

H. Hwang, Seungjae Jung, Man Chang, 2008 .

Impact of oxygen incorporation at the Si3N4∕Al2O3 interface on retention characteristics for nonvolatile memory applications

H. Hwang, M. Jo, Seungjae Jung, 2008 .

Improvement of memory properties for MANOS-type nonvolatile memory devices with high-pressure wet vapor annealing

H. Hwang, M. Jo, Seungjae Jung, 2007 .

Modulation of TiSiN effective work function using high-pressure postmetallization annealing in dilute oxygen ambient

Chang Seo Park, H. Hwang, M. Jo, 2008 .

The impact of Al interfacial layer on resistive switching of La0.7Sr0.3MnO3 for reliable ReRAM applications

H. Hwang, D. Seong, Seungjae Jung, 2009 .

Analysis of interface switching for Nb doped SrTiO3 single crystal device using complex impedance spectroscopy

H. Hwang, D. Seong, Seungjae Jung, 2010 .

Modeling for multilevel switching in oxide-based bipolar resistive memory

U. Chung, Myoung-Jae Lee, Chang Bum Lee, 2012, Nanotechnology.

Impact of high-pressure deuterium oxide annealing on the blocking efficiency and interface quality of metal-alumina-nitride-oxide-silicon-type flash memory devices

H. Hwang, M. Jo, Seungjae Jung, 2007 .

Improvement of Hafnium Oxide/Silicon Oxide Gate Dielectric Stack Quality by High Pressure D2O Post Deposition Annealing

H. Hwang, M. Jo, Man Chang, 2007 .

Effect of $\hbox{F}_{2}$ Postmetallization Annealing on the Electrical and Reliability Characteristics of HfSiO Gate Dielectric

H. Hwang, M. Jo, B. Lee, 2007, IEEE Electron Device Letters.

Band bending effect induced by gate voltage on the charge loss behavior of charge trap flash memory devices

H. Hwang, Man Chang, S. Jeon, 2010 .

Reliable impurity trap memory with high charge trap efficiency using ultrathin SiO2 impurity host layer for nonvolatile memory application

H. Hwang, Seungjae Jung, Seonghyun Kim, 2009 .

Charge loss behavior of a metal-alumina-nitride-oxide-silicon-type flash memory cell with different levels of charge injection

H. Hwang, M. Jo, Seungjae Jung, 2008 .