Yoshihiro Sato

Consideration of switching mechanism of binary metal oxide resistive junctions using a thermal reaction model

K. Kinoshita, Y. Sugiyama, M. Aoki, 2007 .

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

K. Tsunoda, K. Kinoshita, H. Noshiro, 2008 .