M. Lee

Current Status and Future Challenges of Resistive Switching Memories

Y. Y. Lin, Yi-Chou Chen, W. Chien, 2011 .

An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM

F. M. Lee, M. BrightSky, Y. Zhu, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Multi-layer sidewall WOX resistive memory suitable for 3D ReRAM

Y. Y. Lin, C. F. Chen, E. Lai, 2012, 2012 Symposium on VLSI Technology (VLSIT).

A study of the switching mechanism and electrode material of fully CMOS compatible tungsten oxide ReRAM

Kuang-Yeu Hsieh, Chih-Yuan Lu, Wei-Chih Chien, 2011 .

Endurance Improvement of Ge2Sb2Te5-Based Phase Change Memory

B. Rajendran, H. L. Lung, M. Breitwisch, 2009, 2009 IEEE International Memory Workshop.

Ultra-High Endurance and Low IOFF Selector based on AsSeGe Chalcogenides for Wide Memory Window 3D Stackable Crosspoint Memory

E. Lai, W. Chien, F. Lee, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

A Study of Array Resistance Distribution and a Novel Operation Algorithm for WO x ReRAM Memory

H. L. Lung, M. H. Lee, J. Y. Wu, 2015 .

A novel inspection and annealing procedure to rejuvenate phase change memory from cycling-induced degradations for storage class memory applications

W. C. Chien, M. H. Lee, H. L. Lung, 2014, 2014 IEEE International Electron Devices Meeting.

Greater than 2-bits/cell MLC storage for ultra high density phase change memory using a novel sensing scheme

W. C. Chien, M. H. Lee, H. L. Lung, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).