Si Joon Kim

发表

High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor

Young-Chul Byun, Jiyoung Kim, H. S. Kim, 2020 .

The effect of La in InZnO systems for solution-processed amorphous oxide thin-film transistors

Dong Lim Kim, Hyun Jae Kim, Y. Rim, 2010 .

Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances

Jiyoung Kim, S. Summerfelt, Si Joon Kim, 2018, JOM.

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

H. S. Kim, Y. Jung, Si Joon Kim, 2021, physica status solidi (RRL) – Rapid Research Letters.

Low-voltage driving solution-processed nickel oxide based unipolar resistive switching memory with Ni nanoparticles

Hyun Soo Lim, Hyun Jae Kim, Si Joon Kim, 2012 .

A Multifunctional, Room-Temperature Processable, Heterogeneous Organic Passivation Layer for Oxide Semiconductor Thin-Film Transistors.

Hyun Jae Kim, A. Salleo, Si Joon Kim, 2019, ACS applied materials & interfaces.

Modified Stoichiometry in Homogeneous Indium–Zinc Oxide System as Vertically Graded Oxygen Deficiencies by Controlling Redox Reactions

Yang Yang, Y. Rim, Heesoo Lee, 2016 .

Influence of thermal parameter on solution-processed Zr-doped ZTO thin-film transistors

Dong Lim Kim, Bo Sung Kim, Hyun Jae Kim, 2011 .

Thermal activation effects on the stoichiometry of indium zinc oxide thin‐film transistors

Dong Lim Kim, Hyun Jae Kim, Si Joon Kim, 2010 .

A solution-processed quaternary oxide system obtained at low-temperature using a vertical diffusion technique

Hyun Jae Kim, Si Joon Kim, Seokhyun Yoon, 2017, Scientific Reports.

Fabrication of high performance thin-film transistors via pressure-induced nucleation

Hyun Jae Kim, Si Joon Kim, M. Kang, 2014, Scientific Reports.

Electrical analysis of bottom gate TFT with novel process architecture

Hyun Jae Kim, Si Joon Kim, T. Jeong, 2008 .

Investigation of solution-processed amorphous SrInZnO thin film transistors

Dong Lim Kim, Hyun Jae Kim, Y. Rim, 2011 .

Photofield effect and photoresponse properties of the transparent oxide-based BaInZnO thin-film transistors

Hyun Jae Kim, F. Yakuphanoglu, B. Gündüz, 2013 .

Study on the Effects of Zr-Incorporated InZnO Thin-Film Transistors Using a Solution Process

Dong Lim Kim, Hyun Jae Kim, Si Joon Kim, 2011 .

Study on the Electrical Characteristics of Solution-processed ZrInZnO Thin-film Transistors

Hyun Jae Kim, D. Kim, Si Joon Kim, 2011 .

Low-cost label-free electrical detection of artificial DNA nanostructures using solution-processed oxide thin-film transistors.

Sreekantha Reddy Dugasani, Hyun Jae Kim, Sung Ha Park, 2013, ACS applied materials & interfaces.

Review of solution-processed oxide thin-film transistors

Seokhyun Yoon, Hyun Jae Kim, Si Joon Kim, 2014 .

The Effect of Ultraviolet Exposure on Solution Process of Silicon Thin Film

Dong Lim Kim, Hyun Jae Kim, Si Joon Kim, 2009 .

Approaches to label-free flexible DNA biosensors using low-temperature solution-processed InZnO thin-film transistors.

Sreekantha Reddy Dugasani, H. Y. Kwak, Hyun Jae Kim, 2014, Biosensors & bioelectronics.

A multi-channel structure to enhance the performance of a sequential lateral solidification thin-film transistor

Hyun Jae Kim, Si Joon Kim, M. Kang, 2010 .

Low-temperature solution-processed ZrO2 gate insulators for thin-film transistors using high-pressure annealing

Hyun Jae Kim, Y. Rim, Si Joon Kim, 2011 .

Improved Uniformity of Sequential Lateral Solidification Thin-Film Transistors

Hyun Jae Kim, Si Joon Kim, M. Kang, 2011, IEEE Electron Device Letters.

Plasma-Enhanced Atomic-Layer Deposition of Nanometer-Thick SiNx Films Using Trichlorodisilane for Etch-Resistant Coatings

Jaebeom Lee, Jiyoung Kim, H. S. Kim, 2021 .

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Sang Woo Kim, R. Choi, J. Spiegelman, 2020, Materials.

All-sputtered oxide thin-film transistors fabricated at 150 °C using simultaneous ultraviolet and thermal treatment

Hyun Jae Kim, K. Chung, Sera Kwon, 2018 .

Interface location-controlled indium gallium zinc oxide thin-film transistors using a solution process

Hyun Jae Kim, Si Joon Kim, Tae Soo Jung, 2016 .

Solution‐processed oxide thin‐film transistors using aluminum and nitrate precursors for low‐temperature annealing

Dong Lim Kim, Hyun Jae Kim, Y. Rim, 2011 .

Formation of silicon nanoparticles by a pressure induced nucleation mechanism.

Hyun Jae Kim, Si Joon Kim, M. Kang, 2013, Nanoscale.

Fabricating gate insulator by low temperature solution-based process

Dong Lim Kim, Hyun Jae Kim, Si Joon Kim, 2009 .

Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget

Jaebeom Lee, C. Young, L. Colombo, 2017 .

P‐23: Solution‐processed Amorphous Lanthanum Indium Zinc Oxide Thin‐film Transistors

Dong Lim Kim, Hyun Jae Kim, Si Joon Kim, 2010 .

Boosting Visible Light Absorption of Metal-Oxide-Based Phototransistors via Heterogeneous In-Ga-Zn-O and CH3NH3PbI3 Films.

Hyun Jae Kim, D. J. Kim, Si Joon Kim, 2018, ACS applied materials & interfaces.

Solution-processed indium oxide electron transporting layers for high-performance and photo-stable perovskite and organic solar cells.

I. Han, H. S. Kim, Si Joon Kim, 2017, Nanoscale.

Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing

Hyun Jae Kim, Jin-Hyun Kim, S. Hwang, 2021, Applied Physics Letters.

Relaxation Induced by Imprint Phenomena in Low-Temperature (400 °C) Processed Hf0.5Zr0.5O2-Based Metal-Ferroelectric-Metal Capacitors

Jin-Hyun Kim, S. Hwang, Y. Jung, 2022, ACS Applied Electronic Materials.