B. Hwang

High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor

Young-Chul Byun, Jiyoung Kim, H. S. Kim, 2020 .

Plasma-Enhanced Atomic-Layer Deposition of Nanometer-Thick SiNx Films Using Trichlorodisilane for Etch-Resistant Coatings

Jaebeom Lee, Jiyoung Kim, H. S. Kim, 2021 .

Characterization of chemical-vapor-deposited low-k thin films using x-ray porosimetry

B. Bauer, Wen-Li Wu, E. Lin, 2003 .

Elimination of Al Line and Via Resistance Degradation under HTS Test in Application of F-Doped Oxide as Intermetal Dielectric

U. Chung, B. Hwang, K. Fujihara, 1995 .

Hollow Cathode Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using Pentachlorodisilane.

Young-Chul Byun, Jiyoung Kim, H. S. Kim, 2018, ACS Applied Materials and Interfaces.

Ozone based high-temperature atomic layer deposition of SiO2 thin films

H. S. Kim, S. Hwang, Y. Jung, 2020, Japanese Journal of Applied Physics.

Improved spectral response of silicone encapsulanted photovoltaic modules

Nick E. Powell, K. McIntosh, G. Beaucarne, 2010, 2010 35th IEEE Photovoltaic Specialists Conference.

Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper.

R. Wallace, Young-Chul Byun, Jiyoung Kim, 2018, ACS applied materials & interfaces.