D. Yun

A Novel Capacitorless DRAM Cell Using Superlattice Bandgap-Engineered (SBE) Structure With 30-nm Channel Length

Jieun Lee, D. M. Kim, D. Kim, 2011, IEEE Transactions on Nanotechnology.

A narrow bandgap SiGe channel superlattice bandgap engineered 1T DRAM cell for low voltage operation and extended hole retention time

Jieun Lee, D. M. Kim, D. Kim, 2011 .

A novel superlattice band-gap engineered (SBE) capacitorless DRAM cell with extremely short channel length down to 30 nm

D. M. Kim, D. Kim, Sunyeong Lee, 2010, 2010 IEEE International Memory Workshop.

Comparative Study on the Structural Dependence of Logic Gate Delays in Double-Gate and Triple-Gate FinFETs

Dong Myong Kim, Dae Hwan Kim, D. M. Kim, 2010 .

Differential Ideality Factor Technique for Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors

Dong Myong Kim, Jaehyeong Kim, Dae Hwan Kim, 2012, IEEE Electron Device Letters.

Modified Conductance Method for Extraction of Subgap Density of States in a-IGZO Thin-Film Transistors

Dong Myong Kim, Sungwoo Jun, Dae Hwan Kim, 2012, IEEE Electron Device Letters.

Modeling and extraction technique for parasitic resistances in MOSFETs Combining DC I–V and low frequency C–V measurement

Dong Myong Kim, Dae Hwan Kim, Hagyoul Bae, 2012 .