H. Niimi

发表

Capacitance Analysis of Highly Leaky $\hbox{Al}_{2} \hbox{O}_{3}$ MIM Capacitors Using Time Domain Reflectometry

C. G. Kang, B. Lee, K. Lim, 2012, IEEE Electron Device Letters.

Capacitance Analysis of Highly Leaky Al 2 O 3 MIM Capacitors Using Time Domain Reflectometry

C. G. Kang, B. Lee, K. Lim, 2012 .

Silicon Oxynitride and Oxide-Nitride-Oxide Gate Dielectrics by Combined Plasma-Rapid Thermal Processing

G. Lucovsky, S. Hattangady, T. Yasuda, 1994 .

Reaction pathways in remote plasma nitridation of ultrathin SiO2 films

G. Lucovsky, H. Lamb, H. Niimi, 2002 .

Oxidation and Gate Dielectrics

E. Vogel, L. Colombo, H. Niimi, 2007 .

Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices

Gerald Lucovsky, G. Lucovsky, H. Niimi, 1998 .

Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si–SiO2 interfaces

G. Lucovsky, H. Niimi, J. Keister, 2000 .

The Effects of Interfacial Suboxide Transition Regions on Direct Tunneling in Oxide and Stacked Oxide-Nitride Gate Dielectrics

G. Lucovsky, Y. Wu, H. Niimi, 1999 .

Dipole-induced gate leakage reduction in scaled MOSFETs with a highly doped polysilicon/nitrided oxide gate stack

B. Lee, S. Song, J. Blatchford, 2015 .

Controlled Incorporation of Nitrogen at The Top Surface of Silicon Oxide Gate Dielectrics

G. Lucovsky, H. Niimi, K. Koh, 1996 .

Plasma-assisted formation of low defect density SiC–SiO2 interfaces

H. Kurz, G. Lucovsky, H. Niimi, 1997 .

Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes

D. Kwong, G. Bersuker, B. Lee, 2008 .

A high performance 90 nm logic technology with a 37 nm gate length, dual plasma nitrided gate dielectric and differential offset spacer

P. Nicollian, J. Deloach, R. Khamankar, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

Monolayer Nitrogen-Atom Distributions in Ultrathin Gate Dielectrics by Low-Temperature Low-Thermal-Budget Processing

J. Hauser, G. Lucovsky, S. Hattangady, 1995 .

Ultrathin oxide gate dielectrics prepared by low temperature remote plasma-assisted oxidation

G. Lucovsky, H. Niimi, 1998 .

Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked

G. Lucovsky, H. Niimi, 1999 .

Independent Tunneling Reductions Relative to Homogeneous Oxide Dielectrics From i) Nitrided Interfaces, and ii) Physically-Thicker Stacked Oxide/Nitride and Oxide/Oxynitride Gate Dielectrics

G. Lucovsky, Y. Wu, Y. M. Lee, 1999 .

Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing

J. Hauser, G. Lucovsky, Y. Wu, 1998 .

Monolayer-level controlled incorporation of nitrogen at Si–SiO2 interfaces using remote plasma processing

G. Lucovsky, H. Niimi, 1999 .

Improved Performance and Reliability in Aggressively-Scaled NMOS and PMOS FETs: i) Monolayer Interface Nitridation, and ii) Replacement of Stacked Oxide/Nitride Dielectrics With Optimized Oxide/Oxynitride Stacks

G. Lucovsky, H. Niimi, H. Yang, 1999 .

Intrinsic reoxidation of microwave plasma-nitrided gate dielectrics

R. Khamankar, P. Tiner, A. Varghese, 2005 .

Monolayer Nitrogen Atom Incorporation at Buried Si-SiO2 Interfaces: Preparation by Remote Plasma Oxidation/Nitridation and Characterization by On-Line Auger Electron Spectroscopy

Martin L. Green, G. Lucovsky, H. Niimi, 1998 .

Plasma-engineered Si−SiO2 interfaces: monolayer nitrogen atom incorporation by low-temperature remote plasma-assisted oxidation in N2O

G. Lucovsky, H. Niimi, K. Koh, 1998 .

Local atomic structure and electrical properties of nitrided SiSiO2 interfaces produced by low-temperature plasma processing and rapid thermal annealing, and explained by ab-initio quantum chemistry calculations

J. Hauser, G. Lucovsky, S. Hattangady, 1996 .

Issues associated with p-type band-edge effective work function metal electrodes: Fermi-level pinning and flatband roll-off

D. Kwong, G. Bersuker, B. Lee, 2007, 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).

Ultra-thin gate dielectrics prepared by low-temperature remote plasma-assisted oxidation

G. Lucovsky, H. Niimi, K. Koh, 1997 .

Spectroscopic evidence for a network structure in plasma-deposited Ta2O5 films for microelectronic applications

R. S. Johnson, F. L. Galeener, G. Lucovsky, 2001 .

Low-temperature Ar/N2 remote plasma nitridation of SiO2 thin films

G. Lucovsky, H. Lamb, H. Niimi, 2002 .

Integrated processing of silicon oxynitride films by combined plasma and rapid‐thermal processing

G. Lucovsky, S. V. Hattangady, G. Lucovsky, 1996 .

Independent interface and bulk film contributions to reduction of tunneling currents in stacked oxide/nitride gate dielectrics with monolayer nitrided interfaces

G. Lucovsky, H. Niimi, H. Yang, 2000 .

Ti and NiPt/Ti liner silicide contacts for advanced technologies

F. Chafik, S. Jain, N. Loubet, 2016, 2016 IEEE Symposium on VLSI Technology.

Differences between silicon oxycarbide regions at SiCSiO2 prepared by plasma-assisted oxidation and thermal oxidations

H. Kurz, G. Lucovsky, H. Niimi, 1998 .

New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing

R. S. Johnson, G. Lucovsky, H. Niimi, 2000 .

Controlled Nitrogen Incorporation at Si–SiO2 Interfaces by Remote Plasma-Assisted Processing

Martin L. Green, G. Lucovsky, H. Niimi, 1996 .

Sub- $10^{-9}~\Omega $ -cm2 n-Type Contact Resistivity for FinFET Technology

B. Haran, J. Demarest, O. Gluschenkov, 2016, IEEE Electron Device Letters.

Dual beam laser annealing for contact resistance reduction and its impact on VLSI integrated circuit variability

H. Jagannathan, J. Demarest, O. Gluschenkov, 2017, 2017 Symposium on VLSI Technology.

Elimination of sub-oxide transition regions at SiSiO2 interfaces by rapid thermal annealing at 900°C

H. Kurz, G. Lucovsky, B. Hinds, 1997 .

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

P. Oldiges, C. Park, N. Loubet, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO2 gate stacks

R. Chapman, E. Vogel, R. Galatage, 2010 .

Achieving Band Edge Effective Work Function of Gate First Metal Gate by Oxygen Anneal Processes: Low Temperature Oxygen Anneal (LTOA) and High Pressure Oxygen Anneal (HPOA) Processes

H. Hwang, G. Bersuker, P. Kirsch, 2007 .

Ab initio calculations for industrial materials engineering: successes and challenges

J. Vollmer, H. Niimi, W. Wolf, 2010, Journal of physics. Condensed matter : an Institute of Physics journal.

Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT

Jie Yang, Terence B. Hook, Andreas Knorr, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Controlled nitrogen incorporation at the gate oxide surface

G. Lucovsky, S. V. Hattangady, G. Lucovsky, 1995 .

An enhanced 90nm high performance technology with strong performance improvements from stress and mobility increase through simple process changes

B. Hornung, C. Machala, A. Krishnan, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

Specific contact resistivity of n-type Si and Ge M-S and M-I-S contacts

M. Raymond, Jiseok Kim, H. Niimi, 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).