S. Downey

发表

Single mask metal-insulator-metal (MIM) capacitor with copper damascene metallization for sub-0.18 /spl mu/m mixed mode signal and system-on-a-chip (SoC) applications

W. Lai, C. Pai, J. Miner, 2000, Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407).

Diagnostic studies of aluminum etching in an inductively coupled plasma system: Determination of electron temperatures and connections to plasma-induced damage

M. V. Malyshev, V. M. Donnelly, J. Colonell, 2000 .

Radiation‐induced transient darkening of optically transparent polymers

D. Moir, S. Downey, R. Carlson, 1986 .

Evidence of very strong inter-epitaxial-layer diffusion in Zn-doped GaInPAs/InP structures

S. Downey, E. Schubert, C. Pinzone, 1995 .

Saturation of three-photon ionization of atomic hydrogen and deuterium at 243 nm.

S. Downey, R. S. Hozack, R. Hozack, 1989, Optics letters.

A method for the production of iron-52 with a very low iron-55 contamination.

S. Downey, J. Zweit, H. Sharma, 1988, International journal of radiation applications and instrumentation. Part A, Applied radiation and isotopes.

Production of 124I for positron emission tomography

S. Downey, J. Zweit, Anne-Marie Smith, 1988 .

Real-time compositional analysis of submicrometre particles

S. Downey, D. Siconolfi, J. Sinclair, 1994 .

Photoemission optogalvanic spectroscopy: An in situ method for plasma electrode surface characterization

R. Gottscho, S. Downey, A. Mitchell, 1988 .

Photoemission Optogalvanic Spectroscopy: An in situ Plasma-Surface Diagnostic

R. Gottscho, S. Downey, A. Mitchell, 1988 .

Production of cobalt-55, a short-lived, positron emitting radiolabel for bleomycin.

S. Downey, J. Zweit, A. Smith, 1986, International journal of radiation applications and instrumentation. Part A, Applied radiation and isotopes.

Excitation functions for deuteron induced reactions in natural nickel: Production of no-carrier-added 64Cu from enriched 64Ni targets for positron emission tomography

S. Downey, J. Zweit, Anne-Marie Smith, 1991 .

An optogalvanic study of Rydberg oxygen atoms

N. S. Nogar, S. Downey, G. Keaton, 1987 .

Production of no-carrier-added zirconium-89 for positron emission tomography

S. Downey, J. Zweit, Sharma Hl, 1991 .

Replacement ion chromatography with flame photometric detection

G. Hieftje, S. Downey, 1983 .

Intracavity Atomic Absorption with an Inductively Coupled Plasma Atomizer

N. S. Nogar, S. Downey, 1984 .

Spatially resolved, intracavity absorption for inductively coupled plasma diagnostics

N. S. Nogar, S. Downey, Gregory L. Keaton, 1985 .

Continuous wave intracavity dye laser absorption with an inductively coupled plasma

N. S. Nogar, S. Downey, 1985 .

Resonance ionization mass spectrometry of uranium with intracavity laser ionization

N. S. Nogar, S. Downey, C. Miller, 1984 .

Production of gallium-66, a short-lived, positron emitting radionuclide.

S. Downey, J. Zweit, H. Sharma, 1987, International journal of radiation applications and instrumentation. Part A, Applied radiation and isotopes.

The Molybdenum Solar Neutrino Experiment

N. S. Nogar, E. A. Bryant, G. Cowan, 1985 .

Production of carrier‐free 64Cu: A positron emitting radionuclide

S. Downey, J. Zweit, A. Smith, 1988 .

Quantitative depth profiling resonance ionization mass spectrometry of semiconductors with minimum standardization

S. Downey, A. Emerson, 1991 .

13 – Characterization of Compound Semiconductor Material by Ion Beams

S. Downey, 1995 .

Sputtering effects in Si, SiO2 and the Si/SiO2 interface

S. Downey, A. Emerson, 1993 .

Sputtering processes in AlxGa1−xAs and the effects on post-ionization detection

R. Kopf, S. Downey, A. Emerson, 1992 .

Depth profiling resonance ionization mass spectrometry of Be‐doped, layered III–V compound semiconductors

R. Kopf, J. Kuo, S. Downey, 1990 .

Reduction of spectral interferences in inductively-coupled plasma emission spectrometry by selective spectral-line modulation

G. Hieftje, S. Downey, 1982 .

Reduction of spectral interferences in flame emission spectrometry by selective spectral-line modulation

G. Hieftje, S. Downey, J. Shabushnig, 1980 .

Multiple photon processes in tantalum resonance ionization mass spectrometry

N. S. Nogar, S. Downey, C. Miller, 1985 .

Stability of carbon and beryllium‐doped base GaAs/AlGaAs heterojunction bipolar transistors

P. Wisk, F. Ren, S. Pearton, 1991 .

Surface effects on carrier dynamics: photoconductivity studies on Si (111)

C. C. Bahr, J. Hsu, S. Downey, 1992 .

Antimony doping of ZnTe grown by molecular beam epitaxy

R. Spitzer, S. Downey, A. Sher, 1992 .

Resonance ionization mass spectrometry of technetium

N. S. Nogar, S. Downey, C. Miller, 1984 .

Simple laser-driven, metal-photocathode electron source

D. Moir, S. Downey, T. Ringler, 1986 .

Guiding of an electron beam from a rf accelerator by a laser-ionized channel

R. L. Carlson, S. W. Downey, D. C. Moir, 1987 .

A hybrid resonance ionization and secondary ionization mass spectrometer

S. Downey, R. Hozack, 1990 .

N‐ and P‐type dopant profiles in distributed Bragg reflector structures and their effect on resistance

R. F. Kopf, S. W. Downey, E. F. Schubert, 1992 .

Materials analysis by laser and ion beam sputtering with resonance ionization mass spectrometry

N. S. Nogar, B. Fearey, S. Downey, 1990 .

Single particle characterization by time-of-flight mass spectrometry

S. Downey, D. Siconolfi, J. Sinclair, 1995 .

Factors Affecting the Quantification of Boron in SiO2 and Si by Sputtered Neutral Mass Spectrometry

N. Moriya, S. Downey, M. Wise, 1996 .

Depth profiling of dopants in thin gate oxides in complementary metal– oxide–semiconductor structures by resonance ionization mass spectrometry

R. Kistler, D. Jacobson, N. Moriya, 1995 .

Detection of Sputtered Neutrals by Ultrahigh-Intensity Postionization in the Near-Infrared

S. Downey, M. Wise, A. Emerson, 1995 .

Surface analysis, depth profiling, and evaluation of Si cleaning procedures by postionization sputtered neutral mass spectrometry

M. Green, S. Downey, M. Wise, 1996 .

Comparative Study of Experimental Techniques for Boron Profiling at Poly-Si/SiO2 Interface

J. Bude, P. Silverman, H. Luftman, 1995 .

Characterization of InGaAsP materials by ultrahigh intensity post-ionization mass spectrometry: Relative sensitivity factors for zinc versus bulk constituents

S. Downey, M. Wise, A. Emerson, 1996 .

Si(111)(7×7) dangling bond contribution to surface recombination

C. C. Bahr, J. Hsu, S. Downey, 1992 .