A. Halimaoui

发表

Investigation and modeling of the electrical properties of metal–oxide–metal structures formed from chemical vapor deposited Ta2O5 films

S. Blonkowski, M. Regache, A. Halimaoui, 2001 .

Selective growth of tensily strained Si1-yCy films on patterned Si substrates

F. Hüe, O. Kermarrec, Y. Campidelli, 2009 .

Low-temperature RPCVD of Si, SiGe alloy, and Si1−yCy films on Si substrates using trisilane (Silcore®)

O. Kermarrec, Y. Campidelli, D. Bensahel, 2009 .

New insights on strained-Si on insulator fabrication by top recrystallization of amorphized SiGe on SOI

M. Vinet, L. Grenouillet, Y. Morand, 2015, EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.

Ultra-Thin (4nm) Gate-All-Around CMOS devices with High-k/Metal for Low Power Multimedia Applications

Nicolas Loubet, Stephane Monfray, G. Bidal, 2010 .

Tailoring of the Nitrogen Profile in Thin Gate Oxides Using Substrate Nitridation by Nitric Oxide

M. Paoli, J. Martins, D. Bensahel, 1998 .

Selective etching of Pt with respect to PtSi using a sacrificial low temperature germanidation process

E. Dubois, T. Skotnicki, G. Rolland, 2007 .

The influence of quantum effects on the determination of gate oxide thickness from C-V measurements☆

A. Halimaoui, K. Dmowski, 1997 .

Nickel vs. cobalt silicide integration for sub-50nm CMOS

R. Pantel, F. Boeuf, F. Wacquant, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

Oscillatory behavior of the tunneling current in ultra thin gate dielectrics: Influence of various physical and technological parameters☆

Gerard Ghibaudo, K. Barla, G. Ghibaudo, 1997 .

Element for housing, in particular for biofuel cell, and method of manufacture

A. Halimaoui, R. Fournel, 2011 .

Direct Observation of Individual Nanometer-Sized Light-Emitting Structures on Porous Silicon Surfaces

J. Gimzewski, P. Dumas, A. Halimaoui, 1993 .

Application of porous silicon formation selectivity to impurity profiling in p-type silicon substrates

G. Bomchil, A. Halimaoui, F. Muller, 1989 .

Electroluminescence in the visible range during anodic oxidation of porous silicon films

A. Halimaoui, F. Muller, F. Gaspard, 1991 .

Epitaxial silicon growth on porous silicon by reduced pressure, low temperature chemical vapour deposition

J. Regolini, D. Bensahel, G. Bomchil, 1989 .

Shallow trench isolation based on selective formation of oxidized porous silicon

D. Bensahel, A. Halimaoui, A. Souifi, 2011 .

3D Pattern Effects in RTA Radiative vs Conductive Heating

E. Rosseel, E. Granneman, K. Verheyden, 2006 .

X-ray study of UHV-CVD filling of porous silicon by Ge

Y. Campidelli, D. Buttard, A. Halimaoui, 1998 .

Insights into solid phase epitaxy of ultrahighly doped silicon

Y. Campidelli, I. Berbezier, A. Ronda, 2010 .

Low-temperature solid phase epitaxy for integrating advanced source/drain metal-oxide-semiconductor structures

Y. Campidelli, I. Berbezier, G. Amiard, 2010 .

Small-angle X-ray scattering study of the microstructure of highly porous silicon

G. Bomchil, A. Halimaoui, P. Goudeau, 1993 .

Raman investigation of light‐emitting porous silicon layers: Estimate of characteristic crystallite dimensions

B. Champagnon, I. Gregora, A. Halimaoui, 1994 .

Nanocrystallites in luminescent porous silicon characterized by Raman scattering

B. Champagnon, I. Gregora, A. Halimaoui, 1993 .

Determination of the specific surface area of porous silicon from its etch rate in HF solutions

A. Halimaoui, 1994 .

Reduction of ion beam induced and atmospheric ageing of porous silicon using Al and caps

A. Loni, L. Canham, A. Halimaoui, 1996 .

Characterization of photoluminescent porous Si by small‐angle scattering of x rays

G. Bomchil, A. Halimaoui, P. Goudeau, 1992 .

PHOTOLUMINESCENCE OF HIGH POROSITY AND OF ELECTROCHEMICALLY OXIDIZED POROUS SILICON LAYERS

J. Vial, G. Bomchil, A. Halimaoui, 1991 .

Porous silicon: the material and its application to SOI technologies

A. Halimaoui, A. Halimaoui, R. Herino, 1988 .

Optical absorption evidence of a quantum size effect in porous silicon

I. Sagnes, G. Vincent, A. Halimaoui, 1993 .

Detection of Cs2Ge+ clusters for the quantification of germanium atoms by secondary ion mass spectrometry: Application to the characterization of Si1−xGex layers (0⩽x⩽1) and germanium diffusion in silicon

Y. Campidelli, J. Hartmann, F. Cristiano, 2007 .

Strengths and Limitations of the Vacancy Engineering Approach for the Control of Dopant Diffusion and Activation in Silicon

A. Claverie, F. Cristiano, H. Jaouen, 2008 .

Potentialities of disilane for the low temperature epitaxy of intrinsic and boron-doped SiGe

J. Hartmann, A. Halimaoui, M. Veillerot, 2014 .

Visible photoluminescence from porous silicon: A quantum confinement effect mainly due to holes?

G. Bastard, A. Halimaoui, M. Voos, 1992 .

Ultra-thin planar fully relaxed Ge pseudo-substrate on compliant porous silicon template layer

I. Berbezier, A. Ronda, R. Mahamdi, 2012 .

Optical characterisation of porous silicon layers by spectrometric ellipsometry in the 1.5–5 eV range

D. Bensahel, F. Ferrieu, A. Halimaoui, 1992 .

Porous silicon: material processing, properties and applications

A. Halimaoui, 1995 .

Correlation between the Porous Silicon Morphology and the Photoluminescence Efficiency

G. Bomchil, A. Halimaoui, P. Goudeau, 1995 .

SAXS study of the influence of the porous silicon morphology on the photoluminescence efficiency

G. Bomchil, A. Halimaoui, P. Goudeau, 1993 .

Optimized nickel silicide process formation for high performance sub-65nm CMOS nodes

F. Wacquant, A. Pouydebasque, V. Carron, 2004 .

Detailed investigation of Ge–Si interdiffusion in the full range of Si1−xGex(0≤x≤1) composition

Y. Campidelli, F. Cristiano, P. Fazzini, 2008 .

Study of silicon–germanium interdiffusion from pure germanium deposited layers

Y. Campidelli, F. Cristiano, O. Marcelot, 2008 .

Non-melt laser annealing of Plasma Implanted Boron for ultra shallow junctions in Silicon

Costas P. Grigoropoulos, A. Florakis, N. Misra, 2008 .

Porous silicon strain during in situ ultrahigh vacuum thermal annealing

D. Buttard, F. Comin, A. Halimaoui, 1999 .

A microstructural study of porous silicon

I. Berbezier, A. Halimaoui, 1993 .

Integration of ultra-shallow junctions in sub-0.1 /spl mu/m CMOS transistors : what kind of process for a "safe" advanced technology?

T. Skotnicki, D. Lenoble, O. Kermarrec, 2001, Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C).

Investigation of Excimer Laser Annealing of Si using Photoluminescence at Room Temperature

D. Dutartre, A. Halimaoui, J. Venturini, 2007, 2007 15th International Conference on Advanced Thermal Processing of Semiconductors.

Porous silicon: The material and its applications in silicon-on-insulator technologies

G. Bomchil, A. Halimaoui, R. Hérino, 1990 .

Influence of wettability on anodic bias induced electroluminescence in porous silicon

A. Halimaoui, A. Halimaoui, 1993 .

Breakdown characteristics of ultra thin gate oxides following field and temperature stresses

Gerard Ghibaudo, G. Ghibaudo, A. Halimaoui, 1997 .

Sub-micrometre luminescent porous silicon structures using lithographically patterned substrates

I. Berbezier, E. Gogolides, L. Canham, 1995 .

In situ spectroscopic ellipsometry of porous silicon layers annealed under ultrahigh vacuum

Y. Campidelli, D. Bensahel, F. Ferrieu, 1994 .