K. Suh

发表

Integration of MIM capacitors with low-k/Cu process for 90 nm analog circuit applications

Jeong-Hoon Ahm, Kyung-Tae Lee, Mu-Kyeung Jung, 2003, Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695).

High quality high-k MIM capacitor by Ta/sub 2/O/sub 5//HfO/sub 2//Ta/sub 2/O/sub 5/ multi-layered dielectric and NH/sub 3/ plasma interface treatments for mixed-signal/RF applications

Ho-Kyu Kang, K. Suh, Y. Jeong, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

Nitrogen profile effects on the growth rate of gate oxides grown on nitrogen-implanted silicon

Sung I. Hong, Seung-Woo Lee, Byung-Gook Park, 2001 .

Ultrathin gate oxide grown on nitrogen-implanted silicon for deep submicron CMOS transistors

Sung I. Hong, Seung-Woo Lee, Byung-Gook Park, 2001 .

Improvement of NBTI and electrical characteristics by ozone pre-treatment and PBTI issues in HfAlO(N) high-k gate dielectrics

Seong-Geon Park, C. Hwang, Jong-Ho Lee, 2003, IEEE International Electron Devices Meeting 2003.

Mass-productive ultra-low temperature ALD SiO/sub 2/ process promising for sub-90 nm memory and logic devices

Ho-Kyu Kang, J. Ku, N. Lee, 2002, Digest. International Electron Devices Meeting,.

Negative bias temperature instability in triple gate transistors

You-Seung Jin, Jung-A Choi, Kwang-Pyuk Suh, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

An alternative interpretation of hot electron interface degradation in NMOSFETs: isotope results irreconcilable with major defect generation by holes?

K. Hess, J. Lyding, Young-Wug Kim, 1999 .

A 0 . 25m , 600-MHz , 1 . 5V , Fully Depleted SOI CMOS 64-Bit Microprocessor

Y. W. Kim, K. Suh, Y. Ko, 1999 .

Device characteristics and reliability for 0.18 /spl mu/m MOSFET with 20 /spl Aring/ gate oxide formed by RTO

Young-Wug Kim, K. Suh, Jeong-Hwan Yang, 1999, ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361).

Mass production worthy HfO/sub 2/-Al/sub 2/O/sub 3/ laminate capacitor technology using Hf liquid precursor for sub-100 nm DRAMs

Ho-Kyu Kang, Jong-Ho Lee, T. Seidel, 2002, Digest. International Electron Devices Meeting,.

Practical next generation solution for stand-alone and embedded DRAM capacitor

Ho-Kyu Kang, Jong-Ho Lee, N. Lee, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

Thermally robust Ta-doped Ni SALICIDE process promising for sub-50 nm CMOSFETs

S. Choi, J. Ku, N. Lee, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

Improved hot-carrier reliability of SOI transistors by deuterium passivation of defects at oxide/silicon interfaces

J. Lyding, Young-Wug Kim, K. Suh, 2002 .

Ultimate solution for low thermal budget gate spacer and etch stopper to retard short channel effect in sub-90 nm devices

Ho-Kyu Kang, J. Ku, N. Lee, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

Impact of mechanical stress engineering on flicker noise characteristics

S. Maeda, You-Seung Jin, Jung-A Choi, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors

K. Hess, J. Lyding, K. Suh, 2000, IEEE Electron Device Letters.

A 0.25-μm, 600-MHz, 1.5-V, fully depleted SOI CMOS 64-bit microprocessor

Y. W. Kim, K. Suh, Y. Ko, 1999, IEEE J. Solid State Circuits.

Highly functional and reliable 8Mb STT-MRAM embedded in 28nm logic

E. S. Jung, J. H. Lee, S. O. Park, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Improved current performance of CMOSFETs with nitrogen incorporated HfO2-Al2O3 laminate gate dielectric

Ho-Kyu Kang, N. Lee, H. Chang, 2002, Digest. International Electron Devices Meeting,.