Weon-hong Kim

High quality high-k MIM capacitor by Ta/sub 2/O/sub 5//HfO/sub 2//Ta/sub 2/O/sub 5/ multi-layered dielectric and NH/sub 3/ plasma interface treatments for mixed-signal/RF applications

Ho-Kyu Kang, K. Suh, Y. Jeong, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

Impacts of Zr Composition in $\hbox{Hf}_{1-x} \hbox{Zr}_{x}\hbox{O}_{y}$ Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics

C. Hwang, N. Lee, K. Oh, 2011, IEEE Transactions on Electron Devices.

Electrical and Bias Temperature Instability Characteristics of n-Type Field-Effect Transistors Using HfO x N y Gate Dielectrics

Jeong Hwan Kim, C. Hwang, N. Lee, 2010 .

Systematic study on bias temperature instability of various high-k gate dielectrics ; HfO2, HfZrxOy and ZrO2

Jeong Hwan Kim, C. Hwang, N. Lee, 2009, 2009 IEEE International Reliability Physics Symposium.

Turn-Around Effect of $V_{\rm th}$ Shift During the Positive Bias Temperature Instability of the n-Type Transistor With $\hbox{HfO}_{x}\hbox{N}_{y}$ Gate Dielectrics

Jeong Hwan Kim, C. Hwang, N. Lee, 2010, IEEE Electron Device Letters.

The Bias Temperature Instability Characteristics of In Situ Nitrogen Incorporated ZrO x N y Gate Dielectrics

Jeong Hwan Kim, Sang Young Lee, Cheol Seong Hwang, 2010 .

The Effect of Nitrogen in HfOxNy and ZrOxNy on Dielectric Properties and BTI Characteristics

Jeong Hwan Kim, C. Hwang, N. Lee, 2010 .