K. Fu

发表

Analysis of photonic crystal and multi-frequency terahertz microstrip patch antenna

Baoshun Zhang, Kunfeng Chen, Lechen Yang, 2013 .

GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD

D. Vasileska, F. Ponce, H. Chen, 2020, IEEE Transactions on Electron Devices.

Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures

S. Denbaars, C. Ning, S. Nakamura, 2020, Nano Energy.

Plasma Enhanced Atomic Layer-etched and Regrown GaN-on-GaN High Power p-n Diodes

David J. Smith, R. Nemanich, Yuji Zhao, 2020, Microscopy and Microanalysis.

High Voltage Vertical GaN p-n Diodes With Hydrogen-Plasma Based Guard Rings

S. Goodnick, F. Ponce, H. Chen, 2020, IEEE Electron Device Letters.

Vertical GaN-on-GaN Schottky Barrier Diodes With Multi-Floating Metal Rings

H. Chen, Xuanqi Huang, Yuji Zhao, 2020, IEEE Journal of the Electron Devices Society.

Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics

F. Ponce, Hanxiao Liu, Yuji Zhao, 2019, Applied Physics Letters.

Dopant profiling in p-i-n GaN structures using secondary electrons

F. Ponce, Hanxiao Liu, Yuji Zhao, 2019, Journal of Applied Physics.

Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes

M. McCartney, F. Ponce, Hanxiao Liu, 2019, Applied Physics Letters.

Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing $(10\bar{1}0)$ m-plane GaN substrates

Baoshun Zhang, Ke Xu, F. Ponce, 2018, Applied Physics Express.

High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination

H. Chen, Xuanqi Huang, Yuji Zhao, 2018, IEEE Electron Device Letters.

Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

Baoshun Zhang, Zhang Zhili, Jie Yuan, 2016 .

Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs

Baoshun Zhang, Guohao Yu, K. Fu, 2018 .

Effect of Proton Radiation on Ultrawide Bandgap AlN Schottky Barrier Diodes

H. Chen, Xuanqi Huang, Yuji Zhao, 2019, IEEE Transactions on Nuclear Science.

Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs

Baoshun Zhang, Guohao Yu, K. Fu, 2017 .

650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric

Kevin J. Chen, Baoshun Zhang, Shu Yang, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Low-frequency noise characteristics of GaN vertical PIN diodes—Effects of design, current, and temperature

A. Balandin, S. Rumyantsev, Subhajit Ghosh, 2021, Applied Physics Letters.

On-chip directional octave-spanning supercontinuum generation from high order mode in near ultraviolet to infrared spectrum using AlN waveguides

A. K. Vinod, C. Ning, C. Wong, 2019, 1908.04719.

Characterization of MOCVD regrown p-GaN and the interface properties for vertical GaN power devices

F. Ponce, Hanxiao Liu, Yuji Zhao, 2020, Semiconductor Science and Technology.

Influence of channel/back-barrier thickness on the breakdown of AlGaN/GaN MIS-HEMTs

Baoshun Zhang, Sen Zhang, K. Fu, 2018, Journal of Semiconductors.

Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part II

T. Palacios, Yuji Zhao, K. Fu, 2021, IEEE Transactions on Electron Devices.

Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes

David J. Smith, S. Goodnick, H. Chen, 2020, IEEE Journal of the Electron Devices Society.

Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition

F. Ponce, H. Chen, Hanxiao Liu, 2018, Applied Physics Letters.

Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT

Baoshun Zhang, Guohao Yu, K. Fu, 2018, IEEE Transactions on Electron Devices.

Low-leakage kV-class GaN vertical p–n diodes with non-destructive breakdown enabled by hydrogen-plasma termination with p-GaN extension

Yuji Zhao, K. Fu, H. Fu, 2021, Semiconductor Science and Technology.

Compatibility of AlN/SiNx Passivation With LPCVD-SiNx Gate Dielectric in GaN-Based MIS-HEMT

Kevin J. Chen, Baoshun Zhang, C. Liu, 2016, IEEE Electron Device Letters.

16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si3N4 as gate insulator

Baoshun Zhang, Wei Huang, Shuxin Tan, 2015 .

Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation

Wei Huang, Baoshun Zhang, Yong Cai, 2015, IEEE Electron Device Letters.

Fabrication of normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid

Baoshun Zhang, Shuiming Li, Qian Sun, 2016 .

AlGaN/GaN MIS-HEMTs of Very-Low ${V}_{\sf {{th}}}$ Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator

Zhili Zhang, Yanfei Zhao, Guohao Yu, 2017, IEEE Electron Device Letters.

External charge compensation in etched gallium nitride measured by x-ray photoelectron spectroscopy

R. Nemanich, Yuji Zhao, K. Fu, 2022, Journal of Applied Physics.

Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric

Baoshun Zhang, Guohao Yu, K. Fu, 2022, Electronics.

Temperature-dependent electrical properties of β-Ga2O3 Schottky barrier diodes on highly doped single-crystal substrates

H. Chen, Xuanqi Huang, Yuji Zhao, 2019, Journal of Semiconductors.

Enhancement-Mode Gate-Recess-Free GaN-Based p-Channel Heterojunction Field-Effect Transistor With Ultra-Low Subthreshold Swing

David J. Smith, Yuji Zhao, K. Fu, 2021, IEEE Electron Device Letters.

Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing m-plane GaN substrates

Baoshun Zhang, Ke Xu, F. Ponce, 2018, Applied Physics Express.

Threshold Switching and Memory Behaviors of Epitaxially Regrown GaN-on-GaN Vertical p-n Diodes With High Temperature Stability

H. Chen, Xuanqi Huang, Yuji Zhao, 2019, IEEE Electron Device Letters.

Electronic structure of epitaxially grown and regrown GaN pn junctions characterized by scanning Kelvin probe and capacitance microscopy

E. Yu, Yuji Zhao, K. Fu, 2022, Journal of Applied Physics.

Properties and device performance of BN thin films grown on GaN by pulsed laser deposition

P. Ajayan, Xiang Zhang, R. Vajtai, 2022, Applied Physics Letters.

Toward High Efficiency at High Temperatures: Recent Progress and Prospects on InGaN-Based Solar Cells

Hongxing Jiang, Xuanqi Huang, Yuji Zhao, 2022, Materials Today Energy.

X-ray topography characterization of gallium nitride substrates for power device development

A. Allerman, M. Dudley, Yuji Zhao, 2020, Journal of Crystal Growth.

Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs

Baoshun Zhang, Shu Yang, Cheng Liu, 2015, IEEE Transactions on Electron Devices.

AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric

R. Nemanich, Yuji Zhao, K. Fu, 2021, Applied Physics Letters.

Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells

Xiaodong Wang, G. Chen, W. Ge, 2014 .

Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction

Shulong Lu, Baoshun Zhang, Guohao Yu, 2018, nano Online.

Demonstration of mechanically exfoliated β-Ga2O3/GaN p-n heterojunction

H. Chen, Xuanqi Huang, Yuji Zhao, 2019, Applied Physics Letters.

Supercontinuum Generation in High Order Waveguide Mode with near-Visible Pumping Using Aluminum Nitride Waveguides

A. K. Vinod, C. Ning, C. Wong, 2021, ACS Photonics.

Study of crystalline defect induced optical scattering loss inside photonic waveguides in UV-visible spectral wavelengths using volume current method.

H. Chen, Xuanqi Huang, Yuji Zhao, 2019, Optics express.

The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices

David J. Smith, S. Goodnick, R. Nemanich, 2021, Applied Physics Letters.

Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

H. Barnaby, M. Kozicki, R. Fang, 2019, Nanotechnology.

A Novel PN junction between Mechanically Exfoliated \b{eta}-Ga2O3 and p-GaN

H. Chen, Xuanqi Huang, Yuji Zhao, 2018, 1812.05729.

Bias-voltage dependent ultraviolet photodetectors prepared by GaOx + ZnO mixture phase nanocrystalline thin films

Hui Yang, Baoshun Zhang, Xueqiang Dong, 2013 .

Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part I

T. Palacios, Yuji Zhao, K. Fu, 2021, IEEE Transactions on Electron Devices.

Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs

Baoshun Zhang, Qi Zhou, Jie Yuan, 2017, IEEE Electron Device Letters.

Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4 as Gate Dielectric and Passivation Layer

Wei Huang, Baoshun Zhang, Yong Cai, 2016, IEEE Transactions on Electron Devices.

High-Temperature Polarization-Free III-Nitride Solar Cells with Self-Cooling Effects

S. Denbaars, C. Ning, S. Nakamura, 2019, ACS Photonics.

Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers

Xuanqi Huang, Houqiang Fu, Jossue Montes, 2018, Applied Physics Letters.

Optimization of Duty Ratio of Metallic Grating Arrays for Infrared Photodetectors

Dong Liu, Baoshun Zhang, Lechen Yang, 2011 .

High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition

Baoshun Zhang, Guohao Yu, K. Fu, 2017 .

Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress

E. Yu, A. Allerman, David J. Smith, 2021, Materials Today.

Lateral and vertical growth of Mg-doped GaN on trench-patterned GaN films

F. Ponce, Hanxiao Liu, Yuji Zhao, 2020, Applied Physics Letters.

Demonstration of 1.27 kV Etch-Then-Regrow GaN ${p}$ - ${n}$ Junctions With Low Leakage for GaN Power Electronics

Xuanqi Huang, Houqiang Fu, Chen Yang, 2019, IEEE Electron Device Letters.

The effect of Ga-doped nanocrystalline ZnO electrode on deep- ultraviolet enhanced GaN photodetector

H. Yang, Rongxin Wang, K. Fu, 2013 .

Dual Current and Voltage Sensitivity Temperature Sensor Based on Lateral p-GaN/AlGaN/GaN Hybrid Anode Diode

Baoshun Zhang, Guohao Yu, K. Fu, 2021, IEEE Sensors Journal.

Demonstration of Low Loss β-Ga2O3 Optical Waveguides in the UV-NIR Spectra

Baoshun Zhang, H. Chen, Xuanqi Huang, 2019, 2020 Conference on Lasers and Electro-Optics (CLEO).

Deep level transient spectroscopy investigation of ultra-wide bandgap (2̄01) and (001) β-Ga2O3

H. Chen, Xuanqi Huang, Yuji Zhao, 2020 .

Integration of LPCVD-SiNx gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime

Jin Wei, Baoshun Zhang, Yong Cai, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Effects of annealing temperature on the characteristics of Ga-doped ZnO film metal-semiconductor-metal ultraviolet photodetectors

Rongxin Wang, K. Fu, Shijie Xu, 2013 .

GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform

Yuji Zhao, K. Fu, J. Greer, 2022, IEEE Electron Device Letters.

Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability

Baoshun Zhang, Xiaodong Zhang, Yong Cai, 2017 .

Novel Pulsating-DC High-Voltage Linear Driving Scheme for GaN LED General Lighting

K. Fu, H. Guo, Baoxing Wang, 2023, Electronics.

AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

Baoshun Zhang, Shuiming Li, Qian Sun, 2016 .

Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

H. Barnaby, M. Kozicki, R. Fang, 2019, Nanotechnology.

GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric

Baoshun Zhang, Shu Yang, Cheng Liu, 2015, IEEE Electron Device Letters.