Q. Han

发表

Monolithic integration of an InP-based 4 × 25 GHz photodiode array to an O-band arrayed waveguide grating demultiplexer

Han Ye, Q. Han, Qianqian Lv, 2017 .

A Low Dark Current Mesa-Type InGaAs/InAlAs Avalanche Photodiode

Bin Li, Qin Han, B. Li, 2015, IEEE Photonics Technology Letters.

Flat-top AWG based on InP deep ridge waveguide

Hongjie Wang, Q. Han, Pan Pan, 2015 .

LASERS, OPTICS, AND OPTOELECTRONICS 2865 Single-mode solid-state single photon source based on isolated quantum dots in pillar microcavities

Costas Fotakis, Eric Moreau, C. Kalpouzos, 2001 .

High-performance 1.55 mu m low-temperature-grown GaAs resonant-cavity-enhanced photodetector

Qiyuan Wang, Zhiqiang Niu, Xiang Yang, 2006 .

Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots

Z. G. Wang, Huiyun Liu, Baojian Xu, 2001 .

1.55 mu m GaInNAs resonant-cavity-enhanced photodetector grown on GaAs

Qiyuan Wang, Suohui Zhang, Xiang Yang, 2005 .

Monolithic integration of a InP AWG and InGaAs photodiodes on InP platform

Han Ye, Q. Han, Qianqian Lv, 2017 .

High structural and optical quality 1.3 {mu}m GaInNAs/GaAs quantum wells with higher indium content grown by molecular-beam expitaxy

Shiyong Zhang, Zhenhong He, Zhichuan Niu, 2005 .

Photoconductive multi-layer graphene photodetectors fabricated on etched silicon-on-insulator substratesr*

Han Ye, Q. Han, Qianqian Lv, 2017 .

Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 mu m grown by molecular beam epitaxy

Shiyong Zhang, H. Ni, Donghai Wu, 2007 .

A quantum dot asymmetric self-gated nanowire FET for high sensitive detection

H. Ni, Q. Han, Xiaohong Yang, 2015 .

A high-efficiency grating coupler between single-mode fiber and silicon-on-insulator waveguide

Han Ye, Q. Han, Xiaohong Yang, 2017 .

Design and Fabrication of an Array of 8 Evanescently Coupled Uni-Traveling-Carrier Photodiodes

Han Ye, Q. Han, Qianqian Lv, 2016, 2016 Asia Communications and Photonics Conference (ACP).

Butt-joint Regrowth method by MOCVD for integration of evanescent wave coupled photodetector and MQW semiconductor optical amplifier

Han Ye, Q. Han, Xiaoming Feng, 2021, Chinese Physics B.

Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 mu m (InyGa1-yAs/GaAs1-x Sb-x)/ GaAs bilayer quantum wells

Zhiqiang Niu, Xiaoqing Xu, Ying-qiang Xu, 2005 .

High-indium-content InxGa1−xAs/GaAs quantum wells with emission wavelengths above 1.25 μm at room temperature

Zhichuan Niu, Haiqiao Ni, Xuecheng Wei, 2004 .

High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nm

Qin Han, Huiyun Liu, Bowei Xu, 2001 .

Characteristic of rapid thermal annealing on GaIn(N)(Sb)As∕GaAs quantum well grown by molecular-beam epitaxy

Shiyong Zhang, Ying-qiang Xu, H. Ni, 2006 .

Low threshold current density 1.3 μm metamorphic InGaAs/GaAs quantum well laser diodes

Shumin Wang, H. Ni, I. Tångring, 2008 .

Post-growth and in situ annealing on GaInNAs(Sb) and their application in 1.55 µm lasers

S. Zhang, Y. Xu, Q. Han, 2006 .

Realization of high interference visibility based on silica-on-silicon planar lightwave circuit

Yue Wang, Qin Han, Jin You, 2021, Optical Engineering.

Design, Fabrication, and Characteristic Analysis of 64 × 64 InGaAs/InP Single-Photon Avalanche Diode Array

Han Ye, Q. Han, Shuai Wang, 2022, Journal of Electronic Materials.

A method to transfer an individual graphene flake to a target position with a precision of sub-micrometer

Xiaohong Yang, Han Ye, Yubing Wang, 2017 .

Design and fabrication of multi-channel photodetector array monolithic with arrayed waveguide grating

Han Ye, Q. Han, Qianqian Lv, 2016 .