A. Fissel

发表

Deformation characteristics and real structure around indents on {111}A-surfaces of II–VI solid solutions

M. Schenk, A. Fissel, 1992 .

Integration of low dimensional crystalline Si into functional epitaxial oxides for next generation solar cell application

H. Osten, E. Bugiel, A. Laha, 2008, COMMAD 2008.

Low‐temperature growth of SiC thin films on Si and 6H–SiC by solid‐source molecular beam epitaxy

B. Schröter, W. Richter, A. Fissel, 1995 .

Formation of twinning-superlattice regions by artificial stacking of Si layers

E. Bugiel, C. Wang, A. Fissel, 2006 .

Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide

H. Osten, E. Bugiel, A. Laha, 2009, Nanotechnology.

Fabrication of single-crystalline insulator/Si/insulator double-barrier nanostructure using cooperative vapor-solid-phase epitaxy

E. Bugiel, A. Fissel, H. Osten, 2007 .

Novel Approach for Fabrication of Single-Crystalline Insulator/Si/Insulator Nanostructures

E. Bugiel, A. Fissel, H. Osten, 2006 .

Native defects and complexes in SiC

F. Bechstedt, J. Furthmüller, A. Fissel, 2001 .

Crystal structure and strain state of molecular beam epitaxial grown Gd2O3 on Si(1 1 1) substrates: a diffraction study

H. Osten, A. Laha, W. Braun, 2009 .

THERMODYNAMICS AND KINETICS OF NANOCLUSTER FORMATION ON SEMICONDUCTOR SURFACES: THE EXAMPLE OF SI GROWTH ON SIC(0001)

A. Fissel, 2019 .

Epitaxial Lanthanide Oxide based Gate Dielectrics

H. Osten, A. Laha, A. Fissel, 2009 .

Formation of self-assembled Gd2O3 nanowire-like structures during epitaxial growth on Si(001)

A. Fissel, P. Gribisch, 2021, RSC advances.

Tuning of structural and dielectric properties of Gd2O3 grown on Si(001)

A. Fissel, P. Gribisch, 2020 .

Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical properties

H. Osten, B. Ai, A. Laha, 2011 .

Integration of MoSe2 Monolayers with Epitaxial High-Κ Gd2O3 Substrate: Implication for High-Quality Emission and Modulation of Excitonic Quasiparticles

H. Osten, A. Fissel, S. Dhara, 2022, ACS Applied Nano Materials.

Size-dependent interface band alignment between Si nanocrystals and lattice-matched Gd2O3

A. Stesmans, H. Osten, A. Laha, 2009 .

Band offsets between Si and epitaxial rare earth sesquioxides (RE2O3, RE=La,Nd,Gd,Lu): Effect of 4f-shell occupancy

A. Stesmans, H. Osten, L. Edge, 2008 .

Epitaxial growth of SiC thin films on Si-stabilized α-SiC(0001) at low temperatures by solid-source molecular beam epitaxy

B. Schröter, W. Richter, U. Kaiser, 1995 .

In situ observation of low temperature growth of Ge on Si(1 1 1) by reflection high energy electron diffraction

E. Bugiel, A. Fissel, T. Wietler, 2016 .

MBE growth and properties of SiC multi-quantum well structures

F. Bechstedt, B. Schröter, W. Richter, 2001 .

Conduction and material transport phenomena of degradation in electrically stressed ultra low-k dielectric before breakdown

C. Boit, A. Fissel, E. Langer, 2012 .

Si ADSORPTION ON SiC(0001) SURFACES

J. Dabrowski, A. Fissel, 2003 .

Advances in the molecular-beam epitaxial growth of artificially layered heteropolytypic structures of SiC

B. Schröter, W. Richter, U. Kaiser, 2000 .

Semiconductor nanostructures in crystalline rare earth oxide for nanoelectronic device applications

V. Afanas’ev, E. Bugiel, A. Laha, 2010, 2010 International Conference on Microelectronics.

Si Nanostructures Embedded into Crystalline Rare Earth Oxide Matrix for Opto and Nano Electronic Devices

H. Osten, A. Laha, A. Fissel, 2010, 2010 Fourth International Conference on Quantum, Nano and Micro Technologies.

Investigations of Stranski-Krastanov growth kinetics of Si-dots on 6H-SiC(0001)

W. Richter, A. Fissel, K. Pfennighaus, 1997 .

Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy

H. Osten, E. Bugiel, A. Laha, 2010 .

Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd2O3 on Si(001).

H. Osten, Jan Schmidt, A. Fissel, 2019, Acta crystallographica Section B, Structural science, crystal engineering and materials.

Epitaxial praseodymium oxide: a new high-k dielectric

H. Osten, E. Bugiel, P. Zaumseil, 2001, Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537).

Si-nanoclusters embedded into epitaxial rare earth oxides: Potential candidate for nonvolatile memory applications

E. Bugiel, A. Laha, A. Fissel, 2008 .

Embedding silicon nanoclusters into epitaxial rare earth oxide for nonvolatile memory applications

H. Osten, E. Bugiel, A. Laha, 2008 .

Epitaxial Gd2O3 on strained Si1−xGex layers for next generation complementary metal oxide semiconductor device application

H. Osten, A. Laha, A. Fissel, 2013 .

Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations

Andre Stesmans, Apurba Laha, Andreas Fissel, 2007 .

Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties

Andreas Fissel, A. Fissel, 2003 .

Growth of atomically smooth AlN films with a 5:4 coincidence interface on Si(111) by MBE

W. Richter, J. Schulze, U. Kaiser, 1999 .

Molecular-beam epitaxy of a strongly lattice-mismatched heterosystem AlN/Si(111) for application in SAW devices

W. Richter, J. Schulze, M. Weihnacht, 1999 .

Epitaxial growth of AlN and GaN on Si(1 1 1) by plasma-assisted molecular beam epitaxy

W. Richter, A. Fissel, H. Schenk, 1999 .

Investigation of two-dimensional growth of AlN(0 0 0 1) on Si(1 1 1) by plasma-assisted molecular beam epitaxy

W. Richter, J. Schulze, U. Kaiser, 1999 .

Structure of SiC-Quantum Wells Studied by TEM and CBED

U. Kaiser, A. Fissel, T. Kups, 2002 .

Epitaxial lanthanide oxide thin films on Si for high-k gate dielectric application: Growth optimization and defect passivation

H. J. Osten, H. Osten, A. Fissel, 2017 .

Effect of Ge passivation on interfacial properties of crystalline Gd2O3 thin films grown on Si substrates

H. Osten, A. Laha, A. Fissel, 2010 .

Influence of boron on the initial stages of Si molecular beam epitaxy on Si(111) studied by reflection high-energy electron diffraction

H. Osten, A. Fissel, J. Krügener, 2009 .

Microhardness of Hg1−xCdxTe and Hg1−xZnxTe

M. Schenk, A. Fissel, 1990 .

Molecular Beam Epitaxy of Semiconductor Nanostructures Based on SiC

A. Fissel, 2005 .

MBE growth kinetics of Si on heavily-doped Si(111):P: a self-surfactant effect

A. Fissel, W. Richter, 2000 .

MBE growth of quantum-size Si-dots on SiC(0001) monitored by RHEED

A. Fissel, K. Pfennighaus, Wolfgang Richter, 1998 .

Thermodynamic considerations of the epitaxial growth of SiC polytypes

A. Fissel, 2000 .

Influence of (7×7)–“1×1” phase transition on step-free area formation in molecular beam epitaxial growth of Si on Si (111)

H. Osten, A. Fissel, J. Krügener, 2015 .

Impact of surface phase coexistence on the development of step-free areas on Si(111)

H. Osten, A. Fissel, J. Krügener, 2015, Frontiers of Materials Science.

RHEED investigations of MBE-growth kinetics of Si on Si(111) and SiC on SiC(100)

W. Richter, M. Oehme, A. Fissel, 1997 .

Impact of boron on the step-free area formation on Si(111) mesa structures

H. Osten, A. Fissel, Ayan Roy Chaudhuri, 2015 .

Growth mechanisms of SiC on α-SiC(0001) prepared by solid-source molecular beam epitaxy

B. Schröter, W. Richter, A. Fissel, 1999 .

Morphology of mesa surfaces on Si(111) prepared by molecular beam epitaxy at temperatures around the (7 × 7)-“1 × 1” surface phase transition

H. Osten, A. Fissel, J. Krügener, 2013 .

Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001)

H. Osten, J. Dabrowski, A. Fissel, 2002 .

CMOS integration of epitaxial Gd2O3 high-k gate dielectrics

J. K. Efavi, Max C. Lemme, Michael Schmidt, 2006 .

Formation of Si twinning-superlattice: First step towards Si polytype growth

E. Bugiel, C. Wang, A. Fissel, 2006 .

Relationship between growth conditions, thermodynamic properties and crystal structure of SiC

A. Fissel, 2001 .

Towards controlled molecular beam epitaxial growth of artificially stacked Si: Study of boron adsorption and surface segregation on Si(1 1 1)

H. Osten, A. Fissel, J. Krügener, 2011 .

Role of boron and (√3 × √3)‐B surface defects on the growth mode of Si on Si(111): A photoemission and electron diffraction study

Jan Krügener, Andreas Fissel, Dominik Schwendt, 2010 .

Molecular beam epitaxial growth of Si on heavily boron-doped Si(111) surface: From initial stages to the growth of Si polytypes

H. Osten, E. Bugiel, A. Fissel, 2008, 2008 Conference on Optoelectronic and Microelectronic Materials and Devices.

Influence of growth conditions on the growth mode and layer structure in MBE-growth of SiC on SiC(0001)

B. Schröter, W. Richter, U. Kaiser, 1997 .

Effective control on flat band voltage of epitaxial lanthanide oxide based metal oxide semiconductor capacitors by interfacial carbon

H. Osten, A. Laha, A. Fissel, 2013 .

MBE growth of Si on SiC(0001): from superstructures to islands

W. Richter, U. Kaiser, A. Fissel, 2001 .

Epitaxial growth of SiC-heterostructures on α-SiC(0001) by solid-source MBE

B. Schröter, U. Kaiser, J. Kräusslich, 1999 .

Mechanisms of homo- and heteroepitaxial growth of SiC on α-SiC(0001) by solid-source molecular beam epitaxy

B. Schröter, W. Richter, U. Kaiser, 1999 .

Model of the epitaxial growth of SiC-polytypes under surface-stabilized conditons

F. Bechstedt, B. Schröter, W. Richter, 1998 .

Towards understanding epitaxial growth of alternative high-K dielectrics on Si(001): Application to praseodymium oxide

H. Osten, E. Bugiel, A. Fissel, 2003 .

Growth mechanism for alternating supply epitaxy: the unique pathway to achieve uniform silicon carbide films on multiple large-diameter silicon substrates

A. Iacopi, L. Hold, S. Dimitrijev, 2016 .

Long-Term Stability of Epitaxial (Nd1–xGdx)2O3 Thin Films Grown on Si(001) for Future CMOS Devices

H. Osten, A. Laha, A. Fissel, 2016, IEEE Transactions on Electron Devices.

Ultraviolet photoelectron spectroscopic study of boron adsorption and surface segregation on Si(111)

H. Osten, A. Fissel, J. Kruegener, 2011 .

Effective passivation of slow interface states at the interface of single crystalline Gd2O3 and Si(100)

David-Wei Zhang, Qingqing Sun, H. Osten, 2008 .

Introducing crystalline rare‐earth oxides into Si technologies

H. Osten, E. Bugiel, A. Laha, 2008 .

Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K application

H. Osten, A. Laha, A. Fissel, 2007 .

Impact of Si substrate orientations on electrical properties of crystalline Gd2O3 thin films for high-K application

H. Osten, A. Laha, A. Fissel, 2006 .

Enhanced Electrical Properties of Carbon Doped Epitaxial Gd2O3 Thin Films on Si Substrates

H. Osten, A. Laha, A. Fissel, 2011 .

Enhanced dielectric properties of nitrogen doped epitaxial Gd2O3 thin films on Si

H. Osten, A. Fissel, Ayan Roy Chaudhuri, 2014 .

Epitaxial multi-component rare-earth oxide: A high-k material with ultralow mismatch to Si

H. Osten, E. Bugiel, A. Laha, 2010 .

MBE growth and properties of epitaxial metal oxides for high-κ dielectrics

H. Osten, E. Bugiel, A. Fissel, 2005 .

Hexagonal and cubic SiC thin films on SiC deposited by solid source MBE

B. Schröter, W. Richter, U. Kaiser, 1997 .

Investigation of growth conditions for epitaxial growth of SiC on Si in the solid-source molecular beam epitaxy

B. Schröter, W. Richter, U. Kaiser, 1997 .

Improved Epitaxy of Cubic SiC Thin Films on Si(111) by Solid-Source MBE

B. Schröter, W. Richter, U. Kaiser, 1997 .

Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si(100)

H. Osten, A. Fissel, Ayan Roy Chaudhuri, 2014 .

Erratum: “Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si(100)” [Appl. Phys. Lett. 104, 012906 (2014)]

H. Osten, A. Fissel, Ayan Roy Chaudhuri, 2015 .

Growth and characterization of crystalline gadolinium oxide on silicon carbide for high-K application

H. Osten, A. Fissel, M. Czernohorsky, 2006 .

0.86-nm CET Gate Stacks With Epitaxial$hboxGd_2hboxO_3$High-$k$Dielectrics and FUSI NiSi Metal Electrodes

H. J. Osten, H. Kurz, E. Bugiel, 2006, IEEE Electron Device Letters.

Crystalline ternary rare earth oxide with capacitance equivalent thickness below 1 nm for high-K application

Apurba Laha, Eberhard Bugiel, Andreas Fissel, 2006 .

Interface formation during molecular beam epitaxial growth of neodymium oxide on silicon

M. Czernohorsky, Eberhard Bugiel, Andreas Fissel, 2006 .

Vickers indentation hardness of Hg1−xCdxTe

M. Schenk, A. Fissel, A. Engel, 1989 .

Microhardness of (Hg,Cd)Te

M. Schenk, A. Fissel, 1988 .

Investigation of band offsets and direct current leakage properties of nitrogen doped epitaxial Gd2O3 thin films on Si

H. Osten, A. Fissel, Ayan Roy Chaudhuri, 2013 .

High-K Dielectrics: The Example of Pr2O3

H. Osten, J. Dabrowski, H. Müssig, 2004 .

On the nature of the D1-defect center in SiC: A photoluminescence study of layers grown by solid-source molecular-beam epitaxy

F. Bechstedt, W. Richter, J. Furthmüller, 2001 .

High-quality SiC epitaxial layers and low-dimensional heteropolytypic SiC structures grown by solid-source MBE

A. Fissel, 2001 .

Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping

Andreas Fissel, H. J. Osten, H. Osten, 2013 .

Fabrication of single-crystalline insulator∕Si∕insulator nanostructures

E. Bugiel, A. Fissel, H. Osten, 2006 .

Cooperative solid-vapor-phase epitaxy: An approach for fabrication of single-crystalline insulator/Si/insulator nanostructures

Eberhard Bugiel, Andreas Fissel, H. J. Osten, 2006 .

Characterization of crystalline rare-earth oxide high-K dielectrics grown by molecular beam epitaxy on silicon carbide

H. Osten, A. Fissel, M. Czernohorsky, 2006 .

Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application

H. Osten, A. Fissel, M. Czernohorsky, 2007 .

Epitaxial Growth and Properties of Silicon on Crystalline Rare-Earth-Metal Oxide for SOI-Applications

H. Osten, E. Bugiel, A. Laha, 2009 .

Impact of oxygen supply during growth on the electrical properties of crystalline Gd2O3 thin films on Si(001)

M. Czernohorsky, Eberhard Bugiel, Andreas Fissel, 2006 .

Growth of epitaxial lanthanide oxide based gate dielectrics

H. Osten, E. Bugiel, A. Laha, 2009, 2009 3rd International Conference on Signals, Circuits and Systems (SCS).

Integration of functional epitaxial oxides into silicon: From high-K application to nanostructures

H. Osten, E. Bugiel, A. Laha, 2007 .

INTERFACE FORMATION DURING EPITAXIAL GROWTH OF BINARY METAL OXIDES ON SILICON

H. Osten, E. Bugiel, A. Fissel, 2006 .

Interface Engineering During Epitaxial Growth of High-K Lanthanide Oxides on Silicon

E. Bugiel, A. Fissel, M. Czernohorsky, 2006 .

TEM investigations of epitaxial high-α dielectrics on silicon

H. Osten, E. Bugiel, A. Fissel, 2005 .

Electrical characterization of ultrathin single crystalline Gd2O3/Si(100) with Pt top electrode

Qingqing Sun, H. Osten, S. Ding, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

Observation of near interface oxide traps in single crystalline Nd2O3 on Si(111) by quasistatic C-V method

Qing-Qing Sun, Apurba Laha, Shi-Jin Ding, 2008 .

A transmission electron microscopy investigation of SiC films grown on Si(111) substrates by solid-source molecular beam epitaxy

W. Stobbs, A. Fissel, S. Newcomb, 1998 .

Growth of columnar aluminum nitride layers on Si(111) by molecular beam epitaxy

Andreas Fissel, W. Richter, Ute Kaiser, 1997 .

Quantum structures in SiC

F. Bechstedt, J. Furthmüller, U. Kaiser, 2003 .