Scott M. Johnson

发表

Effect of dislocations on the electrical and optical properties of long‐wavelength infrared HgCdTe photovoltaic detectors

J. Rosbeck, Scott M. Johnson, D. Rhiger, 1992 .

Molecular‐beam epitaxial growth of CdTe(112) on Si(112) substrates

D. Rajavel, C. A. Cockrum, Scott M. Johnson, 1995 .

Molecular beam epitaxial growth and performance of integrated two-color HgCdTe detectors operating in the mid-wave infrared band

E. A. Patten, Rajesh D. Rajavel, Joseph P. Rosbeck, 1997 .

Direct molecular‐beam epitaxial growth of ZnTe(100) and CdZnTe(100)/ZnTe(100) on Si(100) substrates

John A. Roth, J. A. Roth, O. K. Wu, 1993 .

Molecular beam epitaxial growth and performance of integrated multispectral HgCdTe photodiodes for the detection of mid-wave infrared radiation

E. A. Patten, Rajesh D. Rajavel, P. M. Goetz, 1998 .

Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4″ silicon substrates

R. E. Bornfreund, A. C. Childs, William A. Radford, 2001 .

Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb

Arthur C. Gossard, James L. Merz, L. Samoska, 1996 .

Molecular beam epitaxial growth of HgCdTe midwave infrared multispectral detectors

E. A. Patten, G. M. Venzor, J. E. Jensen, 1998 .

Lithography factors that determine the aspect ratio of electron cyclotron resonance plasma etched HgCdTe trenches

William A. Radford, J. D. Benson, John H. Dinan, 2003 .

The effect of electron cyclotron resonance plasma parameters on the aspect ratio of trenches in HgCdTe

William A. Radford, J. D. Benson, John H. Dinan, 2003 .

Improved Defect and Fourier Transform Infrared Spectroscopy Analysis for Prediction of Yield for HgCdTe Multilayer Heterostructures

D. D. Lofgreen, D. Beard, Edward P. Smith, 2007 .

Thin film transmission matrix approach to fourier transform infrared analysis of HgCdTe multilayer heterostructures

D. D. Lofgreen, A. A. Buell, M. F. Vilela, 2006 .

Developments in the fabrication and performance of high-quality HgCdTe detectors grown on 4-in. Si substrates

R. E. Bornfreund, William A. Radford, J. B. Varesi, 2002 .

HgCdTe 128 × 128 infrared focal plane arrays on alternative substrates of CdZnTe/GaAs/Si

M. H. Kalisher, C. A. Cockrum, Scott M. Johnson, 1990 .

Heteroepitaxial HgCdTe/CdZnTe/GaAs/Si Materials for Infrared Focal Plane Arrays

G. Tompa, Scott M. Johnson, G. S. Tompa, 1990 .

Performance of molecular-beam epitaxy-grown midwave infrared HgCdTe detectors on four-inch Si substrates and the impact of defects

R. E. Bornfreund, William A. Radford, J. B. Varesi, 2003 .

MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays

R. E. Bornfreund, A. C. Childs, William A. Radford, 2001 .

Fabrication and Characterization of Small Unit-Cell Molecular Beam Epitaxy Grown HgCdTe-on-Si Mid-Wavelength Infrared Detectors

G. M. Venzor, J. W. Bangs, M. V. Liguori, 2007 .

Direct growth of CdZnTe/Si substrates for large-area HgCdTe infrared focal plane arrays

Bonnie A. Baumgratz, John A. Roth, J. A. Roth, 1995 .

Status of MBE technology for the flexible manufacturing of HgCdTe focal plane arrays

Rajesh D. Rajavel, G. M. Venzor, John A. Roth, 1996 .

CdZnTe on Si(001) and Si(112): Direct MBE Growth for Large‐Area HgCdTe Infrared Focal‐Plane Array Applications

G. S. Kamath, O. K. Wu, C. A. Cockrum, 1994 .

High-quality large-area MBE HgCdTe/Si

William A. Radford, Edward P. Smith, I. Kasai, 2006 .

Molecular-beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared applications

Rajesh D. Rajavel, G. M. Venzor, J. E. Jensen, 1998 .

HgCdTe/Si materials for long wavelength infrared detectors

Vaidya Nathan, R. E. Bornfreund, G. M. Venzor, 2004 .

Voltage controllable dual-band response from InAs/GaSb strained layer superlattice detectors with nBn design

Elena Plis, S. Krishna, Sanjay Krishna, 2011 .

Lateral diffusion of minority carriers in InAsSb-based nBn detectors

Elena Plis, Stephen Myers, M. N. Kutty, 2010 .

Scalability of dry-etch processing for small unit-cell HgCdTe focal-plane arrays

E. A. Patten, G. M. Venzor, William A. Radford, 2003 .

Fabrication and characterization of two-color midwavelength/long wavelength HgCdTe infrared detectors

E. A. Patten, G. M. Venzor, William A. Radford, 2006 .

HgCdTe focal plane arrays for dual-color mid- and long-wavelength infrared detection

Valerie Randall, E. A. Patten, G. M. Venzor, 2004 .

Heteroepitaxy of HgCdTe(112) infrared detector structures on Si(112) substrates by molecular-beam epitaxy

Rajesh D. Rajavel, G. M. Venzor, J. E. Jensen, 1996 .

MOCVD grown CdZn Te/GaAs/Si substrates for large-area HgCdTe IRFPAs

R. F. Risser, M. H. Kalisher, C. A. Cockrum, 1993 .

Wafer bonding of (211) Cd0.96Zn0.04Te on (001) silicon

M. Goorsky, G. Malouf, Scott M. Johnson, 2004 .

Control and growth of middle wave infrared (MWIR) Hg(1−x)CdxTe on Si by molecular beam epitaxy

A. C. Childs, Scott M. Johnson, J. Peterson, 2005 .

Status of HgCdTe/Si technology for large format infrared focal plane arrays

Scott M. Johnson, A. C. Childs, John E. Jensen, 2005, SPIE OPTO.

High-Performance LWIR MBE-Grown HgCdTe/Si Focal Plane Arrays

Yen N. Thai, Edward P. Smith, J. Rosbeck, 2007 .

Inductively coupled plasma etching for large format HgCdTe focal plane array fabrication

Edward P. Smith, J. Varesi, J. Benson, 2005 .

LWIR HgCdTe Detectors Grown on Ge Substrates

Yen N. Thai, E. A. Patten, Edward P. Smith, 2008 .

Physical structure of molecular-beam epitaxy growth defects in HgCdTe and their impact on two-color detector performance

R. A. Coussa, J. A. Roth, Edward P. Smith, 2004 .

HgCdTe negative luminescence devices for cold shielding and other applications

Edward P. Smith, I. Vurgaftman, W. Tennant, 2006 .

Dual-band pBp detectors based on InAs/GaSb strained layer superlattices

Edward P. Smith, S. Krishna, E. Plis, 2013 .

Exfoliation and blistering of Cd0.96Zn0.04Te substrates by ion implantation

M. Goorsky, G. Malouf, Scott M. Johnson, 2005 .