E. Kamiya

The impact of intermetal dielectric layer and high temperature bake test on the reliability of nonvolatile memory devices

K. Yoshikawa, K. Yamada, E. Sakagami, 1994, Proceedings of 1994 IEEE International Reliability Physics Symposium.

Thickness scaling limitation factors of ONO interpoly dielectric for nonvolatile memory devices

K. Yoshikawa, E. Sakagami, N. Arai, 1996 .

A 3.3 V-only 16 Mb flash memory with row-decoding scheme

Y. Iyama, A. Umezawa, S. Atsumi, 1996, 1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC.

Diffusion and Segregation of Carbon in SiO2 Films

S. Takagi, E. Kamiya, M. Yoshiki, 1997 .