文
论文分享
演练场
杂货铺
论文推荐
字
编辑器下载
登录
注册
Natsuko Kanafuji
发表
Threshold Voltage Instability in 4H-SiC MOSFETs With Phosphorus-Doped and Nitrided Gate Oxides
T. Fuyuki, H. Yano, T. Hatayama, 2015, IEEE Transactions on Electron Devices.