A. Shanware

发表

Complementary model for intrinsic time-dependent dielectric breakdown in SiO2 dielectrics

J. McPherson, R. Khamankar, A. Shanware, 2000 .

Thermochemical description of dielectric breakdown in high dielectric constant materials

J. McPherson, H. Mogul, A. Shanware, 2003 .

Trends in the ultimate breakdown strength of high dielectric-constant materials

J. McPherson, H. Mogul, A. Shanware, 2003 .

Variable Temperature Characteristics of Devices With HfSiON as The High‐κ Dielectric on Nitrided Silicate (SiON) Interfacial Layer

Luigi Colombo, Keith Green, James J. Chambers, 2007 .

Reliability evaluation of HfSiON gate dielectric film with 12.8 /spl Aring/ SiO/sub 2/ equivalent thickness

J. McPherson, R. Khamankar, A. Rotondaro, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Proposed universal relationship between dielectric breakdown and dielectric constant

J. Rodriguez, J. Kim, J. McPherson, 2002, Digest. International Electron Devices Meeting,.

Thermal stability of hafnium–silicate and plasma-nitrided hafnium silicate films studied by Fourier transform infrared spectroscopy

L. Colombo, M. Quevedo-López, A. Shanware, 2005 .

Application of HfSiON as a gate dielectric material

Luigi Colombo, James J. Chambers, A. Rotondaro, 2002 .

Hot-Carrier- and Constant-Voltage-Stress-Induced Low-Frequency Noise in Nitrided High- $k$ Dielectric MOSFETs

Z. Çelik-Butler, L. Colombo, M. Quevedo-López, 2009, IEEE Transactions on Device and Materials Reliability.

Physics-based 1/ f noise model for MOSFETs with nitrided high- κ gate dielectrics

Luigi Colombo, Keith Green, James J. Chambers, 2008 .

Effect of nitrogen incorporation on 1/f noise performance of metal-oxide-semiconductor field effect transistors with HfSiON dielectric

Luigi Colombo, Zeynep Celik-Butler, Tanvir Morshed, 2008 .

A new model for 1/f noise in high-κ MOSFETs

Hsing-Huang Tseng, Z. Celik-Butler, A. Zlotnicka, 2007, 2007 IEEE International Electron Devices Meeting.

Impact of interfacial layer on low-frequency noise of HfSiON dielectric MOSFETs

Z. Celik-Butler, L. Colombo, Z. Çelik-Butler, 2006, IEEE Transactions on Electron Devices.

Flicker noise in nitrided high-k dielectric NMOS transistors

Luigi Colombo, Keith Green, Bigang Min, 2005, SPIE International Symposium on Fluctuations and Noise.

Low-frequency noise characteristics of HfSiON gate-dielectric metal-oxide-semiconductor-field-effect transistors

Luigi Colombo, Keith Green, James J. Chambers, 2005 .

Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO 2 and SiO 2 /Ta 2 O 5 dielectrics with oxide scaling

H. Massoud, E. Vogel, J. Wortman, 1999 .

Comparison of Valence-Band Tunneling in Pure SiO 2 , Composite SiO 2 /Ta 2 O 5 , and Pure Ta 2 O 5 , in Mosfets with 1.0 nm-Thick SiO 2 -Equivalent Gate Dielectrics

H. Massoud, E. Vogel, J. Wortman, 1999 .

Evaluation of the positive biased temperature stress stability in HfSiON gate dielectrics

J. McPherson, S. Aur, P. Nicollian, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

Advanced CMOS transistors with a novel HfSiON gate dielectric

H. Bu, R. Khamankar, T. Grider, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

Modeling of charge trapping induced threshold-voltage instability in high-/spl kappa/ gate dielectric FETs

L. Colombo, R. Dutton, L. Colombo, 2006, IEEE Electron Device Letters.