E. I. Gol’dman

Free ion transport in the insulator layer and electron-ion exchange at an insulator-semiconductor phase boundary produced as a result of thermally stimulated ionic depolarization of silicon MOS structures

A. G. Zhdan, G. Chucheva, E. I. Gol’dman, 1999 .

OPYT PRIMENENIYa PROFILAKTIChESKOY DOZY ALENDRONATA (FOSAMAKS 35 mg) DLYa LEChENIYa OSTEOPOROZA u zhenshchin v postmenopauzes subklinicheskim tireotoksikozom

Z. Belaya, G. Melnichenko, E. I. Gol’dman, 2007 .

On the origin of the thermal-field asymmetry in ionic polarization/depolarization of oxide in Si-MOS structures

A. G. Zhdan, G. Chucheva, E. I. Gol’dman, 2000 .

Generation of minority charge carriers at the semiconductor surface during thermally activated ionic depolarization of metal-insulator-semiconductor structures

A. G. Zhdan, G. Chucheva, E. I. Gol’dman, 2000 .

A new approach to the creation of nanoelectronic systems using a dimensionally-quantized potential relief of charges built into insulating layers on a semiconductor surface

A. G. Zhdan, E. I. Gol’dman, 2000 .